量子点增强硅基探测成像器件的研究进展

朱晓秀; 葛咏; 李建军; 赵跃进; 邹炳锁; 钟海政

doi:10.3788/CO.20201301.0062

Volume 13 Issue 1

Feb. 2020

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Chinese Optics > 2020 > 13(1): 62-74.

ZHU Xiao-xiu, GE Yong, LI Jian-jun, ZHAO Yue-jin, ZOU Bing-suo, ZHONG Hai-zheng. Research progress of quantum dot enhanced silicon-based photodetectors[J]. Chinese Optics, 2020, 13(1): 62-74. doi: 10.3788/CO.20201301.0062

Citation:

ZHU Xiao-xiu, GE Yong, LI Jian-jun, ZHAO Yue-jin, ZOU Bing-suo, ZHONG Hai-zheng. Research progress of quantum dot enhanced silicon-based photodetectors[J]. Chinese Optics, 2020, 13(1): 62-74. doi: 10.3788/CO.20201301.0062

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Research progress of quantum dot enhanced silicon-based photodetectors

doi: 10.3788/CO.20201301.0062

1.
Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems, School of Material Science&Engineering, Beijing Institute of Technology, Beijing 100081, China
2.
School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China

Funds:

Supported by National Natural Science Foundation of China Excellent Youth Fund No. 61722502

National Science Foundation of China/Research Grant Council of Hong Kong Project No.51761165021

More Information

Corresponding author: ZHONG Hai-zheng E-mail:hzzhong@bit.edu.cn
Received Date: 13 Jun 2019
Rev Recd Date: 03 Jul 2019
Publish Date: 01 Feb 2020

Abstract

Abstract

Silicon-based photodetectors have been widely investigated due to their high reliability, easy integration and low cost. With the development of artificial intelligence and autonomous vehicles, research and performance enhancement of silicon-based photodetectors is an important field of research. Quantum dots are excellent light-conversion and light-modulation materials due to their superior absorption coefficient, tunable spectra, high photoluminescence quantum yield and simple integration. The tunable light absorption and phototuminesence properties of quantum dots make them suitable materials for enhancing the detection. Quantum dots enhanced silicon-based photodetectors are emerging as a new technique to advance the performance of detection and imaging. In particular, they show potential to expand the functionality of CCD and CMOS devices and further satisfy increasing demands for detection. In this review, we summarized the progress of quantum dot-enhanced silicon-based photodetectors in the field of ultraviolet detection, infrared imaging, polarization detection and spectral detection, hoping to attract the attentions of domestic colleagues.
- imaging detection,
- quantum dot,
- silicon-based photodetector,
- polarization

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References(71)

References

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