量子点发光二极管稳定性提高策略

吕玫; 张丽; 张彦; 袁明鉴; 吕玫; 张丽; 张彦; 袁明鉴

doi:10.37188/CO.2020-0184

[1]

DAI X L, ZHANG ZH X, JIN Y ZH, et al. Solution-processed, high-performance light-emitting diodes based on quantum dots[J]. Nature, 2014, 515(7525): 96-99. doi: 10.1038/nature13829

[2]

SHEN H B, GAO Q, ZHANG Y B, et al. Visible quantum dot light-emitting diodes with simultaneous high brightness and efficiency[J]. Nature Photonics, 2019, 13(3): 192-197. doi: 10.1038/s41566-019-0364-z

[3]

LI X Y, ZHAO Y B, FAN F J, et al. Bright colloidal quantum dot light-emitting diodes enabled by efficient chlorination[J]. Nature Photonics, 2018, 12(3): 159-164. doi: 10.1038/s41566-018-0105-8

[4]

JI W Y, JING P T, XU W, et al. High color purity ZnSe/ZnS core/shell quantum dot based blue light emitting diodes with an inverted device structure[J]. Applied Physics Letters, 2013, 103(5): 053106. doi: 10.1063/1.4817086

[5]

COLVIN V, SCHLAMP M, ALIVISATOS A. Light-emitting diodes made from cadmium selenide nanocrystals and a semiconducting polymer[J]. Nature, 1994, 370(6488): 354-357. doi: 10.1038/370354a0

[6]

SONG J J, WANG O Y, SHEN H B, et al. Over 30% external quantum efficiency light-emitting diodes by engineering quantum dot-assisted energy level match for hole transport layer[J]. Advanced Functional Materials, 2019, 29(33): 1808377. doi: 10.1002/adfm.201808377

[7]

LI X Y, LIN Q L, SONG J J, et al. Quantum-dot light-emitting diodes for outdoor displays with high stability at high brightness[J]. Advanced Optical Materials, 2020, 8(2): 1901145. doi: 10.1002/adom.201901145

[8]

CAO W R, XIANG CH Y, YANG Y X, et al. Highly stable QLEDs with improved hole injection via quantum dot structure tailoring[J]. Nature Communications, 2018, 9(1): 2608. doi: 10.1038/s41467-018-04986-z

[9]

MOON H, LEE C, LEE W, et al. Stability of quantum dots, quantum dot films, and quantum dot light-emitting diodes for display applications[J]. Advanced Materials, 2019, 31(34): 1804294. doi: 10.1002/adma.201804294

[10]

SUN Y ZH, JIANG Y B, SUN X W, et al. Beyond OLED: efficient quantum dot light-emitting diodes for display and lighting application[J]. The Chemical Reccord, 2019, 19(8): 1729-1752. doi: 10.1002/tcr.201800191

[11]

DEMBSKI S, GRAF C, KRÜGER T, et al. Photoactivation of CdSe/ZnS quantum dots embedded in silica colloids[J]. Small, 2008, 4(9): 1516-1526. doi: 10.1002/smll.200700997

[12]

CARRILLO-CARRIÓN C, CÁRDENAS S, SIMONET B M, et al. Quantum dots luminescence enhancement due to illumination with UV/Vis light[J]. Chemical Communications, 2009(35): 5214-5226. doi: 10.1039/b904381k

[13]

PECHSTEDT K, WHITTLE T, BAUMBERG J, et al. Photoluminescence of colloidal CdSe/ZnS quantum dots: the critical effect of water molecules[J]. The Journal of Physical Chemistry C, 2010, 114(28): 12069-12077. doi: 10.1021/jp100415k

[14]

MÜLLER J, LUPTON J M, ROGACH A L, et al. Air-induced fluorescence bursts from single semiconductor nanocrystals[J]. Applied Physics Letters, 2004, 85(3): 381-383. doi: 10.1063/1.1769585

[15]

KIM D, FU Y, KIM S, et al. Polyethylenimine ethoxylated-mediated all-solution-processed high-performance flexible inverted quantum dot-light-emitting device[J]. ACS Nano, 2017, 11(2): 1982-1990. doi: 10.1021/acsnano.6b08142

[16]

KIM J H, HAN C Y, LEE K H, et al. Performance improvement of quantum dot-light-emitting diodes enabled by an alloyed ZnMgO nanoparticle electron transport layer[J]. Chemistry of Materials, 2015, 27(1): 197-204. doi: 10.1021/cm503756q

[17]

SONG J ZH, LI J H, LI X M, et al. Quantum dot light-emitting diodes based on inorganic perovskite cesium lead halides (CsPbX₃)[J]. Advanced Materials, 2015, 27(44): 7162-7167. doi: 10.1002/adma.201502567

[18]

ZHAO Y M, RIEMERSMA C, PIETRA F, et al. High-temperature luminescence quenching of colloidal quantum dots[J]. ACS Nano, 2012, 6(10): 9058-9067. doi: 10.1021/nn303217q

[19]

MISZTA K, DORFS D, GENOVESE A, et al. Cation exchange reactions in colloidal branched nanocrystals[J]. ACS Nano, 2011, 5(9): 7176-7183. doi: 10.1021/nn201988w

[20]

ROWLAND C E, LIU W Y, HANNAH D C, et al. Thermal stability of colloidal InP nanocrystals: small inorganic ligands boost high-temperature photoluminescence[J]. ACS Nano, 2014, 8(1): 977-985. doi: 10.1021/nn405811p

[21]

DAVIDSON-HALL T, AZIZ H. The role of excitons within the hole transporting layer in quantum dot light emitting device degradation[J]. Nanoscale, 2019, 11(17): 8310-8318. doi: 10.1039/C8NR09560D

[22]

CHEN S, CAO W R, LIU T L, et al. On the degradation mechanisms of quantum-dot light-emitting diodes[J]. Nature Communications, 2019, 10(1): 765. doi: 10.1038/s41467-019-08749-2

[23]

ZHANG D D, DUAN L, LI CH, et al. High-efficiency fluorescent organic light-emitting devices using sensitizing hosts with a small singlet–triplet exchange energy[J]. Advanced Materials, 2014, 26(29): 5050-5055. doi: 10.1002/adma.201401476

[24]

CHEN F, GUAN ZH Y, TANG A W. Nanostructure and device architecture engineering for high-performance quantum-dot light-emitting diodes[J]. Journal of Materials Chemistry C, 2018, 6(41): 10958-10981. doi: 10.1039/C8TC04028A

[25]

YOU J B, MENG L, SONG T B, et al. Improved air stability of perovskite solar cells via solution-processed metal oxide transport layers[J]. Nature Nanotechnology, 2016, 11(1): 75-81. doi: 10.1038/nnano.2015.230

[26]

YANG W G, HUANG X J, HARDER R, et al. Coherent diffraction imaging of nanoscale strain evolution in a single crystal under high pressure[J]. Nature Communications, 2013, 4(1): 1680. doi: 10.1038/ncomms2661

[27]

KIM S, KIM J, KIM D, et al. High-performance transparent quantum dot light-emitting diode with patchable transparent electrodes[J]. ACS Applied Materials &Interfaces, 2019, 11(29): 26333-26338.

[28]

CUN Y K, MAI CH H, LUO Y, et al. All-solution processed high performance inverted quantum dot light emitting diodes[J]. Journal of Materials Chemistry C, 2020, 8(12): 4264-4270. doi: 10.1039/C9TC06850C

[29]

CAO F, WANG H R, SHEN P Y, et al. High-efficiency and stable quantum dot light-emitting diodes enabled by a solution-processed metal-doped nickel oxide hole injection interfacial layer[J]. Advanced Functional Materials, 2017, 27(42): 1704278. doi: 10.1002/adfm.201704278

[30]

SHI Y L, LIANG F, HU Y, et al. High performance blue quantum dot light-emitting diodes employing polyethylenimine ethoxylated as the interfacial modifier[J]. Nanoscale, 2017, 9(39): 14792-14797. doi: 10.1039/C7NR04542E

[31]

QIAN L, ZHENG Y, CHOUDHURY K R, et al. Electroluminescence from light-emitting polymer/ZnO nanoparticle heterojunctions at sub-bandgap voltages[J]. Nano Today, 2010, 5(5): 384-389. doi: 10.1016/j.nantod.2010.08.010

[32]

JAVAUX C, MAHLER B, DUBERTRET B, et al. Thermal activation of non-radiative Auger recombination in charged colloidal nanocrystals[J]. Nature Nanotechnology, 2013, 8(3): 206-212. doi: 10.1038/nnano.2012.260

[33]

CHANG J H, PARK P, JUNG H, et al. Unraveling the origin of operational instability of quantum dot based light-emitting diodes[J]. ACS Nano, 2018, 12(10): 10231-10239. doi: 10.1021/acsnano.8b03386

[34]

YE Y X, ZHENG X R, CHEN D S, et al. Design of the hole-injection/hole-transport interfaces for stable quantum-dot light-emitting diodes[J]. The Journal of Physical Chemistry Letters, 2020, 11(12): 4649-4654. doi: 10.1021/acs.jpclett.0c01323

[35]

XUE X L, DONG J Y, WANG SH P, et al. Degradation of quantum dot light emitting diodes, the case under a low driving level[J]. Journal of Materials Chemistry C, 2020, 8(6): 2014-2018. doi: 10.1039/C9TC04107A

[36]

LIM J, PARK Y S, WU K F, et al. Droop-free colloidal quantum dot light-emitting diodes[J]. Nano Letters, 2018, 18(10): 6645-6653. doi: 10.1021/acs.nanolett.8b03457

[37]

PU CH D, DAI X L, SHU Y F, et al. Electrochemically-stable ligands bridge the photoluminescence-electroluminescence gap of quantum dots[J]. Nature Communications, 2020, 11(1): 937. doi: 10.1038/s41467-020-14756-5

[38]

ZHANG ZH X, YE Y X, PU CH D, et al. High-performance, solution-processed, and insulating-layer-free light-emitting diodes based on colloidal quantum dots[J]. Advanced Materials, 2018, 30(28): e1801387. doi: 10.1002/adma.201801387

[39]

DAVIDSON-HALL T, AZIZ H. Significant enhancement in quantum dot light-emitting device stability via a cascading hole transport layer[J]. ACS Applied Materials &Interfaces, 2020, 12(14): 16782-16791.

[40]

JIANG X H, MA Y T, TIAN Y, et al. High-efficiency and stable quantum dot light-emitting diodes with staircase V₂O₅/PEDOT: PSS hole injection layer interface barrier[J]. Organic Electronics, 2020, 78: 105589. doi: 10.1016/j.orgel.2019.105589

[41]

KHAN Q, SUBRAMANIAN A, AHMED I, et al. Overcoming the electroluminescence efficiency limitations in quantum-dot light-emitting diodes[J]. Advanced Optical Materials, 2019, 7(20): 1900695. doi: 10.1002/adom.201900695

[42]

SHEN H B, CAO W R, SHEWMON N T, et al. High-efficiency, low turn-on voltage blue-violet quantum-dot-based light-emitting diodes[J]. Nano Letters, 2015, 15(2): 1211-1216. doi: 10.1021/nl504328f

[43]

LEE K H, LEE J H, KANG H D, et al. Over 40 cd/A efficient green quantum dot electroluminescent device comprising uniquely large-sized quantum dots[J]. ACS Nano, 2014, 8(5): 4893-4901. doi: 10.1021/nn500852g

[44]

LI ZH H, CHEN F, WANG L, et al. Synthesis and evaluation of ideal core/shell quantum dots with precisely controlled shell growth: nonblinking, single photoluminescence decay channel, and suppressed FRET[J]. Chemistry of Materials, 2018, 30(11): 3668-3676. doi: 10.1021/acs.chemmater.8b00183

[45]

HAN C Y, YANG H. Development of colloidal quantum dots for electrically driven light-emitting devices[J]. Journal of the Korean Ceramic Society, 2017, 54(6): 449-469. doi: 10.4191/kcers.2017.54.6.03

[46]

FU Y, KIM D, JIANG W, et al. Excellent stability of thicker shell CdSe@ZnS/ZnS quantum dots[J]. RSC Advances, 2017, 7(65): 40866-40872. doi: 10.1039/C7RA06957J

[47]

YANG ZH W, WU Q Q, LIN G L, et al. All-solution processed inverted green quantum dot light-emitting diodes with concurrent high efficiency and long lifetime[J]. Materials Horizons, 2019, 6(10): 2009-2015. doi: 10.1039/C9MH01053J

[48]

KIM S, KIM T, KANG M, et al. Highly luminescent InP/GaP/ZnS nanocrystals and their application to white light-emitting diodes[J]. Journal of the American Chemical Society, 2012, 134(8): 3804-3809. doi: 10.1021/ja210211z

[49]

JUN S, JANG E. Bright and stable alloy core/multishell quantum dots[J]. Angewandte Chemie International Edition, 2013, 52(2): 679-682. doi: 10.1002/anie.201206333

[50]

PANDA S K, HICKEY S G, WAURISCH C, et al. Gradated alloyed CdZnSe nanocrystals with high luminescence quantum yields and stability for optoelectronic and biological applications[J]. Journal of Materials Chemistry, 2011, 21(31): 11550-11555. doi: 10.1039/c1jm11375e

[51]

YANG Y X, ZHENG Y, CAO W R, et al. High-efficiency light-emitting devices based on quantum dots with tailored nanostructures[J]. Nature Photonics, 2015, 9(4): 259-266. doi: 10.1038/nphoton.2015.36

[52]

MORRIS-COHEN A J, DONAKOWSKI M D, KNOWLES K E, et al. The effect of a common purification procedure on the chemical composition of the surfaces of CdSe quantum dots synthesized with trioctylphosphine oxide[J]. The Journal of Physical Chemistry C, 2010, 114(2): 897-906. doi: 10.1021/jp909492w

[53]

KIM T, YOON C, SONG Y G, et al. Thermal stabilities of cadmium selenide and cadmium-free quantum dots in quantum dot–silicone nanocomposites[J]. Journal of Luminescence, 2016, 177: 54-58. doi: 10.1016/j.jlumin.2016.04.038

[54]

PAN J, SHANG Y Q, YIN J, et al. Bidentate ligand-passivated CsPbI₃ perovskite nanocrystals for stable near-unity photoluminescence quantum yield and efficient red light-emitting diodes[J]. Journal of the American Chemical Society, 2018, 140(2): 562-565. doi: 10.1021/jacs.7b10647

[55]

KRIEG F, OCHSENBEIN S T, YAKUNIN S, et al. Colloidal CsPbX₃ (X = Cl, Br, I) nanocrystals 2.0: zwitterionic capping ligands for improved durability and stability[J]. ACS Energy Letters, 2018, 3(3): 641-646. doi: 10.1021/acsenergylett.8b00035

[56]

SUN Y ZH, SU Q, ZHANG H, et al. Investigation on thermally induced efficiency roll-off: toward efficient and ultrabright quantum-dot light-emitting diodes[J]. ACS Nano, 2019, 13(10): 11433-11442. doi: 10.1021/acsnano.9b04879

[57]

CAO F, WU Q Q, YANG X Y. Efficient and stable inverted quantum dot light-emitting diodes enabled by an inorganic copper-doped tungsten phosphate hole-injection layer[J]. ACS Applied Materials &Interfaces, 2019, 11(43): 40267-40273.

[58]

YANG X Y, MUTLUGUN E, ZHAO Y B, et al. Solution processed tungsten oxide interfacial layer for efficient hole-injection in quantum dot light-emitting diodes[J]. Small, 2014, 10(2): 247-252. doi: 10.1002/smll.201301199

[59]

ZHANG H, WANG S T, SUN X W, et al. Solution-processed vanadium oxide as an efficient hole injection layer for quantum-dot light-emitting diodes[J]. Journal of Materials Chemistry C, 2017, 5(4): 817-823. doi: 10.1039/C6TC04050K

[60]

SUN Y ZH, CHEN W, WU Y H, et al. A low-temperature-annealed and UV-ozone-enhanced combustion derived nickel oxide hole injection layer for flexible quantum dot light-emitting diodes[J]. Nanoscale, 2019, 11(3): 1021-1028. doi: 10.1039/C8NR08976K

[61]

YANG X Y, ZHANG Z H, DING T, et al. High-efficiency all-inorganic full-colour quantum dot light-emitting diodes[J]. Nano Energy, 2018, 46: 229-233. doi: 10.1016/j.nanoen.2018.02.002

[62]

JI W Y, LIU S H, ZHANG H, et al. Ultrasonic spray processed, highly efficient all-inorganic quantum-dot light-emitting diodes[J]. ACS Photonics, 2017, 4(5): 1271-1278. doi: 10.1021/acsphotonics.7b00216

[63]

WANG T, ZHU B Y, WANG S P, et al. Influence of shell thickness on the performance of NiO-based all-inorganic quantum dot light-emitting diodes[J]. ACS Applied Materials &Interfaces, 2018, 10(17): 14894-14900.

[64]

ZHANG Y D, WANG SH J, CHEN L, et al. Solution-processed quantum dot light-emitting diodes based on NiO nanocrystals hole injection layer[J]. Organic Electronics, 2017, 44: 189-197. doi: 10.1016/j.orgel.2017.02.023

[65]

LIN J, DAI X L, LIANG X Y, et al. High-performance quantum-dot light-emitting diodes using NiO_x Hole‐injection layers with a high and stable work function[J]. Advanced Functional Materials, 2020, 30(5): 1907265. doi: 10.1002/adfm.201907265

[66]

WANG L X, PAN J Y, QIAN J P, et al. Performance enhancement of all-inorganic quantum dot light-emitting diodes via surface modification of nickel oxide nanoparticles hole transport layer[J]. ACS Applied Electronic Materials, 2019, 1(10): 2096-2102. doi: 10.1021/acsaelm.9b00479

[67]

SUN Q J, WANG Y A, LI L S, et al. Bright, multicoloured light-emitting diodes based on quantum dots[J]. Nature Photonics, 2007, 1(12): 717-722. doi: 10.1038/nphoton.2007.226

[68]

QIAN L, ZHENG Y, XUE J G, et al. Stable and efficient quantum-dot light-emitting diodes based on solution-processed multilayer structures[J]. Nature Photonics, 2011, 5(9): 543-548. doi: 10.1038/nphoton.2011.171

[69]

KWAK J, BAE W K, LEE D, et al. Bright and efficient full-color colloidal quantum dot light-emitting diodes using an inverted device structure[J]. Nano Letters, 2012, 12(5): 2362-2366. doi: 10.1021/nl3003254

[70]

CHO K S, LEE E K, JOO W J, et al. High-performance crosslinked colloidal quantum-dot light-emitting diodes[J]. Nature Photonics, 2009, 3(6): 341-345. doi: 10.1038/nphoton.2009.92

[71]

KIM H Y, PARK Y J, KIM J, et al. Transparent InP quantum dot light-emitting diodes with ZrO₂ electron transport layer and indium zinc oxide top electrode[J]. Advanced Functional Materials, 2016, 26(20): 3454-3461. doi: 10.1002/adfm.201505549

[72]

XIONG X Y, WEI CH T, XIE L M, et al. Realizing 17.0% external quantum efficiency in red quantum dot light-emitting diodes by pursuing the ideal inkjet-printed film and interface[J]. Organic Electronics, 2019, 73: 247-254. doi: 10.1016/j.orgel.2019.06.016

[73]

XIA F T, SUN X W, CHEN SH M. Alternating-current driven quantum-dot light-emitting diodes with high brightness[J]. Nanoscale, 2019, 11(12): 5231-5239. doi: 10.1039/C8NR10461A

[74]

WANG F ZH, SUN W D, LIU P, et al. Achieving balanced charge injection of blue quantum dot light-emitting diodes through transport layer doping strategies[J]. The Journal of Physical Chemistry Letters, 2019, 10(5): 960-965. doi: 10.1021/acs.jpclett.9b00189

[75]

LEE Y, KIM H M, KIM J, et al. Remarkable lifetime improvement of quantum-dot light emitting diodes by incorporating rubidium carbonate in metal-oxide electron transport layers[J]. Journal of Materials Chemistry C, 2019, 7(32): 10082-10091. doi: 10.1039/C9TC02683E

[76]

LI ZH H, HU Y X, SHEN H B, et al. Efficient and long-life green light-emitting diodes comprising tridentate thiol capped quantum dots[J]. Laser &Photonics Reviews, 2017, 11(1): 1600227.

[77]

LIU Y, JIANG C B, SONG CH, et al. Highly efficient all-solution processed inverted quantum dots based light emitting diodes[J]. ACS Nano, 2018, 12(2): 1564-1570. doi: 10.1021/acsnano.7b08129

[78]

LAN L H, LIU B CH, TAO H, et al. Preparation of efficient quantum dot light-emitting diodes by balancing charge injection and sensitizing emitting layer with phosphorescent dye[J]. Journal of Materials Chemistry C, 2019, 7(19): 5755-5763. doi: 10.1039/C8TC04991B

[79]

ZHENG L L, ZHAI G M, ZHANG Y, et al. Solution-processed blue quantum-dot light-emitting diodes based on double hole transport layers: charge injection balance, solvent erosion control and performance improvement[J]. Superlattices and Microstructures, 2020, 140: 106460. doi: 10.1016/j.spmi.2020.106460

[80]

JIANG C B, ZOU J H, LIU Y, et al. Fully solution-processed tandem white quantum-dot light-emitting diode with an external quantum efficiency exceeding 25%[J]. ACS Nano, 2018, 12(6): 6040-6049. doi: 10.1021/acsnano.8b02289

[81]

JIANG C B, LIU H M, LIU B Q, et al. Improved performance of inverted quantum dots light emitting devices by introducing double hole transport layers[J]. Organic Electronics, 2016, 31: 82-89. doi: 10.1016/j.orgel.2016.01.009

[82]

PAN J Y, WEI CH T, WANG L X, et al. Boosting the efficiency of inverted quantum dot light-emitting diodes by balancing charge densities and suppressing exciton quenching through band alignment[J]. Nanoscale, 2018, 10(2): 592-602. doi: 10.1039/C7NR06248F

[83]

WANG X J, SHEN P Y, CAO F, et al. Stepwise bi-layer hole-transport interlayers with deep highest occupied molecular orbital level for efficient green quantum dot light-emitting diodes[J]. IEEE Electron Device Letters, 2019, 40(7): 1139-1142. doi: 10.1109/LED.2019.2916584

[84]

TANG P Y, XIE L M, XIONG X Y, et al. Realizing 22.3% EQE and 7-fold lifetime enhancement in QLEDs via blending polymer TFB and cross-linkable small molecules for a solvent-resistant hole transport layer[J]. ACS Applied Materials &Interfaces, 2020, 12(11): 13087-13095.

[85]

LIU Y Y, LAN L H, LIU B CH, et al. Improved performance of inverted quantum dot light-emitting diodes by blending the small-molecule and polymer materials as hole transport layer[J]. Organic Electronics, 2020, 80: 105618. doi: 10.1016/j.orgel.2020.105618

[86]

LIN Q L, WANG L, LI ZH H, et al. Nonblinking quantum-dot-based blue light-emitting diodes with high efficiency and a balanced charge-injection process[J]. ACS Photonics, 2018, 5(3): 939-946. doi: 10.1021/acsphotonics.7b01195

[87]

DING K, CHEN H T, FAN L W, et al. Polyethylenimine insulativity-dominant charge-injection balance for highly efficient inverted quantum dot light-emitting diodes[J]. ACS Applied Materials &Interfaces, 2017, 9(23): 20231-20238.

[88]

RASTOGI P, PALAZON F, PRATO M, et al. Enhancing the performance of CdSe/CdS dot-in-rod light-emitting diodes via surface ligand modification[J]. ACS Applied Materials &Interfaces, 2018, 10(6): 5665-5672.

[89]

JIN H, MOON H, LEE W, et al. Charge balance control of quantum dot light emitting diodes with atomic layer deposited aluminum oxide interlayers[J]. RSC Advances, 2019, 9(21): 11634-11640. doi: 10.1039/C9RA00145J

[90]

LI Y F, DAI X L, CHEN D S, et al. Inverted quantum dot light-emitting diodes with conductive interlayers of zirconium acetylacetonate[J]. Journal of Materials Chemistry C, 2019, 7(11): 3154-3159. doi: 10.1039/C8TC06511J

[91]

LI Y, HOU X Q, DAI X L, et al. Stoichiometry-controlled InP-based quantum dots: synthesis, photoluminescence, and electroluminescence[J]. Journal of the American Chemical Society, 2019, 141(16): 6448-6452. doi: 10.1021/jacs.8b12908

[92]

WON Y H, CHO O, KIM T, et al. Highly efficient and stable InP/ZnSe/ZnS quantum dot light-emitting diodes[J]. Nature, 2019, 575(7784): 634-638. doi: 10.1038/s41586-019-1771-5