[1] 朱立岩,付秀华.850 nm高亮度半导体激光器腔面膜技术研究[J].长春理工大学学报,2007,30(1):18-20. ZHU L Y,FU X H. The technical development of the 850 nm high-luminance semiconductor laser's film[J]. J. Changchun University of Science and Technology,2007,30(1):18-20.(in Chinese) [2] MARIJOULS S,MORGOTT S,SCHMITT A,et al.. Modeling of the performance of high-Brightness tapered lasers[J]. SPIE,2000,3944:396. [3] BORRUEL L,ESQUIVIAS L,MORENO P. Clarinet laser:semiconductor laser design for high-brightness applications[J]. Appl. Phys. Lett.,2005,87(10):1-3. [4] 刘云,廖新胜,秦莉,等.大功率半导体激光器叠层无氧铜微通道热沉[J].发光学报,2005,26(1):109-114. LIU Y,LIAO X SH,QIN L,et al.. Oxygen-free copper microchannel heat sink of high power semiconductor laser[J]. Chin. J. Lumin.,2005,26(1):109-114.(in Chinese) [5] 王琪,刘云,王立军.InP基高功率短波长量子级联激光器设计[J].中国光学,2012,5(1):83-91. WANG Q,LIU Y,WANG L J. Design of InP-based quantum cascade laser with high power and short wavelength[J]. Chinese Optics,2012,5(1):83-91.(in Chinese) [6] 刘友强,曹银花,潘飞,等.激光加工用半导体激光器的光束变换[J].光学 精密工程,2012(3):455-461. LIU Y Q,CAO Y H,PAN F,et al.. Beam transformation of diode lasers used in laser processing[J]. Opt. Precision Eng.,2012(3):455-461.(in Chinese) [7] 朱洪波,刘云,郝明明,等.高效率半导体激光器光纤耦合模块[J].发光学报,2011,32(11):1147-1151. ZHU H B,LIU Y,HAO M M,et al.. High efficiency module of fiber coupled diode laser[J]. Chin. J. Lumin.,2011,32(11):1147-1151.(in Chinese) [8] DEMARS S D,DZURKO K M,LANG R J,et al..Angled grating distributed feedback laser with 1 W single-mode,diffraction limited output at 980 nm[C]//Lasers and Electro-optics,1996. CLEO'96.,Summaries of Papers Presented at the Conferene on,Jun. 2-7,1996. Anaheim,USA:77-78. [9] SMUDZINSKI C,BOTEZ D,MAWST L J,et al.. Three-core arrow-type diode laser:novel high-power, single-mode device, and effective master oscillator for flared antiguided MOPA's[J]. IEEE J. Quantum Elect.,1995,1:129-137. [10] O'BRIEN S,WELCH D F,PARKE R A,et al..Operating characteristics of a high power monolithically integrated flared amplifier master oscillator power amplifier[J]. IEEE J. Quantum Elect..,1993,29:2052-2057. [11] GOLDBERG L,SURETTE M R,MEHUYS D. Filament formation in a tapered GaAlAs optial amplifier[J]. Appl. Phys. Lett.,1993,62(2304):2044-2051. [12] 杨晔,刘云,秦莉,等.850 nm高亮度锥形半导体激光器的光电特性[J].发光学报,2011,32(6):593-597. YANG Y,LIU Y,QIN L,et al. Electro-optic properties of 850 nm high-brightness tapered lasers[J]. Chin. J. Lumin.,2011,32(6):593-597.(in Chinese) [13] JENSEN O B,KLEHR A,DITTMAR F,et al.. 808 nm tapered diode lasers optimised for high output power and nearly diffraction-limited beam quality in pulse mode operation[J]. SPIE,2007,6456:1-10. [14] MOHRLE M,ROEHLE H,SIGMUND A,et al.. High-performance all-active tapered 1550 nm InGaAsP-BH-FP lasers[C]//14 th Indium Phosphide and Related Materials Conference,Stockholm,Sweden,May 12-16,2002. [15] MIKULLA M,SCHMITT A,WALTHER M,KIEFER R,et al. 25-W CW high-brightness tapered semiconductor laser-array[J]. IEEE Photonic Tech. L.,1999,11(4):412-414. [16] DENTE G C,et al. Low confinement factors for suppressed filaments in semiconductor lasers[J]. IEEE J. Quantum Elect.,2001,37(12):1650-1653. [17] SALET P,GERARD F,FILLION T,et al.. 1.1-W continuous-wave 1480-nm semiconductor lasers with distributed electrodes for mode shaping[J]. IEEE Photonic Tech. L.,1998,10(12):1706-1708. [18] 李璟,刘媛媛,马晓宇.电极分离的980 nm锥形激光器的研制[J].半导体学报,2007,28(8):1302-1306. LI J,LIU Y Y,MA X Y. High-brightness tapered diode lasers emitting at 980 nm with electrically separated ridge waveguide and tapered section[J]. Chinese J. Semiconductors,2007,28(8):1302-1306.(in Chinese) [19] ITO M,KIMURA T,et al. Temperature stabilization in semiconductor laser diodes[J]. IEEE J. Quantum Elect.,1981,17(5):796-798. [20] 张永明,钟景昌,路国光,等.808 nm InGaAsP-InP单量子阱激光器热特性研究[J].光子学报,2006,35(1):9-12. ZHANG Y M,ZHONG J CH,LU G G,et al.. Study of thermal characteristics of 808 nm InGaAsP-InP SQW lasers[J]. Acta Photonica Sinica,2006,35(1):9-12.(in Chinese) [21] PANKOVE J I. Temperature dependence of emission efficiency and lasing threshold in laser diodes[J]. IEEE J. Quantum Electr.,1968,4(4):119-122. [22] LIU C Y,YOON S F,FAN W J,et al.. Ridge width effect on the characteristic temperature of GaInAs triple quantum well ridge waveguide lasers[C]//Lasers and Electro-optics,2005. CLEO/pacific Rim 2005. Pacific Rim Conference on,[S.1.],Japan,Jul.30-Aug.2,2005:857-858. [23] 田振华,孙成林,曹军胜,等.准连续输出大功率半导体激光器的结温测试[J]. 光学 精密工程,2011,19(6):1244-1249. TIAN ZH H,SUN CH L,CAO J SH,et al.. Junction temperature measurement of high power diode lasers[J]. Opt. Precision Eng.,2011,19(6):1244-1249.(in Chinese) [24] 张立森,宁永强,刘迪,等.大功率垂直腔面发射激光器列阵的热模拟及优化[J].发光学报,2012,33(11):1247-1251. ZHANG L S,NING Y Q,LIU D,et al.. Thermal simulation and optimization of structure in high power vertical cavity surface emitting laser array[J]. Chin. J. Lumin.,2012,33(11):1247-1251.(in Chinese) [25] LIU C Y,QU Y,YUAN S,YOON S F. Optimization of ridge height for the fabrication of high performance InGaAsN ridge waveguide lasers with pulsed anodic oxidation[J]. Appl. Phys. Lett.,2004,85(20):4594-4596.