[1] PANICCIA M. Integrating silicon photonics[J]. Nature Photonics,2010,4:498-499. [2] REED G T. Device physics:the optical age of silicon[J]. Nature,2004,427(6975):595-596. [3] IYER S S,XIE Y H. Light emission from silicon[J]. Science,1993,260(5104):40-46. [4] GREEN M A,ZHAO J,WANG A,et al.. Efficient silicon light-emitting diodes[J]. Nature,2001,412:805-808. [5] NG W L,LOURENCO M A,GWILLIAM R M,et al.. An efficient room-temperature silicon-based light-emitting diode[J]. Nature,2001,410:192-195. [6] RONG H,JONES R,LIU A,et al.. A continuous-wave Raman silicon laser[J]. Nature,2005,433:725-728. [7] RONG H,LIU A,JONES R,et al.. An all-silicon Raman laser[J]. Nature,2005,433:292-294. [8] JONES R,PARK H D,FANG A W,et al.. Hybrid silicon integration[J]. J. Materials Science: Materials in Electronics,2009,20(1):3-9. [9] LIU H,WANG T,JIANG Q,et al., Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate[J]. Nature Photonics,2011,5(7):416-419. [10] CULLIS A G,CANHAM L T. Visible light emission due to quantum size effects in highly porous crystalline silicon[J]. Nature,1991,353(6342):335-338. [11] THEWALT M L W,HARRISON D A,REINHART C F,et al.. Type II band alignment in Si1-xGex/Si(001) quantum wells:yhe ubiquitous type I luminescence results from band bending[J]. Physical Rwview Lett.,1997,79(2):269-272. [12] BRUNHES T,BOUCAUD P,SAUVAGE S,et al.. Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition[J]. Appl. Phys. Lett.,2000,77(12):1822-1824. [13] CHANG W H,CHOU A T,CHEN W Y,et al.. Room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si self-assembled quantum dots[J]. Appl. Phys. Lett.,2003,83(14):2958-2960. [14] STOFFEL M,DENKER U,SCHMIDT O G. Electroluminescence of self-assembled Ge hut clusters[J]. Appl. Phys. Lett.,2003,82(19):3236-3238. [15] JINSONG X,TAKEDA Y,USAMI N,et al.. Room-temperature electroluminescence from Si microdisks with Ge quantum dots[J]. Optics Express,2010,18(13):13945-13950. [16] XU X,TSUBOI T,CHIBA T,et al.. Silicon-based current-injected light emitting diodes with Ge self-assembled quantum dots embedded in photonic crystal nanocavities[J]. Optics Express,2012,20(13):14714-14721. [17] SCHMIDT O G,LANGE C,EBERL K. Photoluminescence study of the initial stages of island formation for Ge pyramids/domes and hut clusters on Si(001)[J]. Appl. Phys. Lett.,1999,75(13):1905-1907. [18] DAS S,DAS K,SINGHA R,et al.. Improved infrared photoluminescence characteristics from circularly ordered self-assembled Ge islands[J]. Nanoscale Research Lett.,2011,6(1):416. [19] SHI W H,LI C B,LUO L P,et al.. Growth of Ge quantum dot mediated by boron on Ge wetting layer[J]. J. Crystal Growth,2005,279(3-4):329-334. [20] LIU Z,CHENG B,HU W,et al.. Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperature[J]. Nanoscale Research Lett.,2012,7(1):383. [21] YAKIMOV A I,BLOSHKIN A A,TIMOFEEV V A,et al.. Effect of overgrowth temperature on the mid-infrared response of Ge/Si(001) quantum dots[J]. Appl. Phys. Lett.,2012,100(5):053507. [22] LIU Z,HU W,SU S,et al.. Enhanced photoluminescence and electroluminescence of multilayer GeSi islands on Si(001) substrates by phosphorus-doping[J]. Optics Express,2012,20(20):22327-22333. [23] LUAN H C,LIM D R,LEE K K,et al.. High-quality Ge epilayers on Si with low threading-dislocation densities[J]. Appl. Phys. Lett.,1999,75(19):2909-2911. [24] LIU J,SUN X,PAN D,et al.. Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si[J]. Optics Express,2007,15(18):11272-11277. [25] LIU J F,CANNON D D,WADA K,et al.. Deformation potential constants of biaxially tensile stressed Ge epitaxial films on Si(100)[J]. Physical Review B,2004,70(15):155309. [26] CHENG T H,PENG K L,KO C Y,et al.. Strain-enhanced photoluminescence from Ge direct transition[J]. Appl. Phys. Lett.,2010,96(21):429085. [27] JAIN J R,HRYCIW A,BAER T M,et al.. A micromachining-based technology for enhancing germanium light emission via tensile strain[J]. Nature Photonics,2012,6(6):398-405. [28] LIM P H,PARK S,ISHIKAWA Y,et al.. Enhanced direct bandgap emission in germanium by micromechanical strain engineering[J]. Optics Express,2009,17(18):16358-16365. [29] XIAOCHEN S,JIFENG L,KIMERLING L C,et al.. Direct gap photoluminescence of n-type tensile-strained Ge-on-Si[J]. Appl. Phys. Lett.,2009,95(1):011911. [30] CHENG S-L,LU J,SHAMBAT G,et al.. Room temperature 1.6 microm electroluminescence from Ge light emitting diode on Si substrate[J]. Optics Express,2009,17(12):10019-10024. [31] HU W,CHENG B,XUE C,et al., Electroluminescence from Ge on Si substrate at room temperature[J]. Appl. Phys. Lett.,2009,95(9):092102. [32] SVESS M J,CARROLL L,SIGG H,et al.. Tensile strained Ge quantum wells on Si substrate: Post-growth annealing versus low temperature re-growth[J]. Materials Science and Engineering:B,2012,177(10):696-699. [33] SUN X C,LIU J F,KIMERLING L C,et al.. Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes[J]. Optics Letters,2009,34(8):1198-1200. [34] LIU J F,SUN X C,KIMERLING L C,et al.. Direct-gap optical gain of Ge on Si at room temperature[J]. Optics Lett.,2009,34(11):1738-1740. [35] LIU J,SUN X,CAMACHO-AGUILERA R,et al.. Ge-on-Si laser operating at room temperature[J]. Optics Lett.,2010,35(5):679-681. [36] CAMACHO-AGUILERA R E,CAI Y,PATEL N,et al.. An electrically pumped germanium laser[J]. Optics Express,2012,20(10):11316-11320. [37] CAMACHO-AGUILERA R E,CAI Y,BESSETTE J T,et al.. High active carrier concentration in n-type, thin film Ge using delta-doping[J]. Optics Materials Express,2012,2(11):1462-1469. [38] KUO Y-H,LEE Y K,GE Y,et al.. Strong quantum-confined Stark effect in germanium quantum-well structures on silicon[J]. Nature,2005,437(7063):1334-1336. [39] CHEN Y H,LI C,ZHOU Z W,et al.. Room temperature photoluminescence of tensile-strained Ge/Si0.13Ge0.87 quantum wells grown on silicon-based germanium virtual substrate[J]. Appl. Phys. Lett.,2009,94(14):141902. [40] CHAISAKUL P,MARRIS-MORINI D,ISELLA G,et al.. Room temperature direct gap electroluminescence from Ge/Si0.15Ge0.85 multiple quantum well waveguide[J]. Appl. Phys. Lett.,2011,99(14):141106. [41] WU P H,DUMCENCO D,HUANG Y S,et al.. Above-room-temperature photoluminescence from a strain-compensated Ge/Si0.15Ge0.85 multiple-quantum-well structure[J]. Appl. Phys. Lett.,2012,100(14):141905. [42] LIU Z,HU W,LI C,et al.. Room temperature direct-bandgap electroluminescence from n-type strain-compensated Ge/SiGe multiple quantum wells[J]. Appl. Phys. Lett.,2012,101(23):231108.