[1] GUO Q S, POSPISCHIL A, BHUIYAN M, et al.. Black phosphorus mid-infrared photodetectors with high gain[J]. Nano Letters, 2016, 16(7):4648-4655. doi: 10.1021/acs.nanolett.6b01977
[2] MIAO J SH, HU W D, GUO N, et al.. High-responsivity graphene/InAs nanowire heterojunction near-infrared photodetectors with distinct photocurrent on/off ratios[J]. Small, 2015, 11(8):936-942. doi: 10.1002/smll.201402312
[3] 逯丹凤, 刘瑞鹏, 祁志美.基于多层膜敏感圆片的光学式有机磷快速检测方法[J].分析化学, 2011, 39(6):934-938. http://d.old.wanfangdata.com.cn/Periodical/fxhx201106031

LU D F, LIU R P, QI ZH M. An optical method for rapid detection of organophosphates based on multilayer-disc sensing element[J]. Chinese Journal of Analytical Chemistry, 2011, 39(6):934-938.(in Chinese) http://d.old.wanfangdata.com.cn/Periodical/fxhx201106031
[4] 张维冰, 王智聪, 张凌怡.超高效液相色谱-光电二极管阵列检测-串联四级杆质谱法测定红洋葱中黄酮醇及其糖苷类化合物[J].分析化学, 2014, 42(3):415-422. http://d.old.wanfangdata.com.cn/Periodical/fxhx201403018

ZHANG W B, WANG ZH C, ZHANG L Y. Determination of flavonols and flavonol glycosides in red onion by ultra high performance liquid chromatography-photodiode array detection-tandem quadrupole mass spectrometry[J]. Chinese Journal of Analytical Chemistry, 2014, 42(3):415-422.(in Chinese) http://d.old.wanfangdata.com.cn/Periodical/fxhx201403018
[5] MARTINEZ N J D, GEHL M, DEROSE C T, et al.. Single photon detection in a waveguide-coupled Ge-on-Si lateral avalanche photodiode[J]. Optics Express, 2017, 25(14):16130-16139. doi: 10.1364/OE.25.016130
[6] WOODSON M E, REN M, MADDOX S J, et al.. Low-noise AlInAsSb avalanche photodiode[J]. Applied Physics Letters, 2016, 108(8):081102. doi: 10.1063/1.4942372
[7] WEN J, WANG W J, CHEN X R, et al.. Origin of large dark current increase in InGaAs/InP avalanche photodiode[J]. Journal of Applied Physics, 2018, 123(16):161530. doi: 10.1063/1.4999646
[8] TU J J, ZHAO Y L, WEN K, et al.. The determination of unity gain for InGaAs/InP avalanche photodiodes with excess noise measurements[J]. IEEE Photonics Technology Letters, 2017, 29(8):671-674. doi: 10.1109/LPT.2017.2676028
[9] HE D Y, WANG SH, CHEN W, et al.. Sine-wave gating InGaAs/InP single photon detector with ultralow after pulse[J]. Applied Physics Letters, 2017, 110(11):111104. doi: 10.1063/1.4978599
[10] MA Y J, ZHANG Y G, GU Y, et al.. Impact of etching on the surface leakage generation in mesa-type InGaAs/InAlAs avalanche photodetectors[J]. Optics Express, 2016, 24(7):7823-7834. doi: 10.1364/OE.24.007823
[11] YIN D D, YANG X H, HE T T, et al.. InGaAs/InAlAs avalanche photodetectors integrated on silicon-on-insulator waveguide circuits[J]. Journal of Optical Technology, 2017, 84(5):350-354. doi: 10.1364/JOT.84.000350
[12] CHEN H T, VERBIST J, VERHEYEN P, et al.. High sensitivity 10 Gb/s Si photonic receiver based on a low-voltage waveguide-coupled Ge avalanche photodetector[J]. Optics Express, 2015, 23(2):815-822. doi: 10.1364/OE.23.000815
[13] VIROT L, CROZAT P, FÉDÉLI J M, et al..Germanium avalanche receiver for low power interconnects[J]. Nature Communications, 2014, 5:4957. doi: 10.1038/ncomms5957
[14] MICHELJ, LIU J F, KIMERLING L C. High-performance Ge-on-Si photodetectors[J]. Nature Photonics, 2010, 4(8):527-534. doi: 10.1038/nphoton.2010.157
[15] SAMAVEDAM S B, CURRIE M T, LANGDO T A, et al.. High-quality germanium photodiodes integrated on silicon substrates using optimized relaxed graded buffers[J]. Applied Physics Letters, 1998, 73(15):2125-2127. doi: 10.1063/1.122399
[16] KE SH Y, YE Y J, LIN SH M, et al.. Low-temperature oxide-free silicon and germanium wafer bonding based on a sputtered amorphous Ge[J]. Applied Physics Letters, 2018, 112(4):041601. doi: 10.1063/1.4996800
[17] KE SH Y, YE Y J, WU J Y, et al..Interface characteristics and electrical transport of Ge/Si heterojunction fabricated by low-temperature wafer bonding[J]. Journal of Physics D:Applied Physics, 2018, 51(26):265306. doi: 10.1088/1361-6463/aac7b0
[18] KE SH Y, LIN SH M, YE Y J, et al..Bubble evolution mechanism and stress-induced crystallization in low-temperature silicon wafer bonding based on a thin intermediate amorphous Gelayer[J]. Journal of Physics D:Applied Physics, 2017, 50(40):405305. doi: 10.1088/1361-6463/aa81ee
[19] DUAN N, LIOW T Y, LIM E J, et al.. 310 GHz gain-bandwidth product Ge/Si avalanche photodetector for 1550 nm light detection[J]. Optics Express, 2012, 20(10):11031-11036. doi: 10.1364/OE.20.011031
[20] ZAOUI W S, CHEN H W, BOWERS J E, et al..Frequency response and bandwidth enhancement in Ge/Si avalanche photodiodes with over 840 GHz gain-bandwidth-product[J]. Optics Express, 2009, 17(15):12641-12649. doi: 10.1364/OE.17.012641
[21] KANG Y M, LIU H D, MORSE M, et al..Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product[J]. Nature Photonics, 2009, 3(1):59-63. doi: 10.1038/nphoton.2008.247
[22] SELBERHERR S. Analysis and Simulation of Semiconductor Devices[M]. Vienna:Springer, 1984.
[23] HUANG SH H, LI CH, ZHOU ZH W, et al.. Depth-dependent etch pit density in Ge epilayer on Si substrate with a self-patterned Ge coalescence island template[J]. Thin Solid Films, 2012, 520(6):2307-2310. doi: 10.1016/j.tsf.2011.09.023
[24] ZHOU ZH W, HE J K, WANG R CH, et al.. Normal incidence p-i-n Geheterojunction photodiodes on Si substrate grown by ultrahigh vacuum chemical vapor deposition[J]. Optics Communications, 2010, 283(18):3404-3407. doi: 10.1016/j.optcom.2010.04.098