拓扑量子材料光电探测器研究进展

张兴超; 潘锐; 韩嘉悦; 董翔; 王军; 张兴超; 潘锐; 韩嘉悦; 董翔; 王军

doi:10.37188/CO.2020-0096

[1]

ATABAKI A H, MOAZENI S, PAVANELLO F, et al. Integrating photonics with silicon nanoelectronics for the next generation of systems on a chip[J]. Nature, 2018, 556(7701): 349-354. doi: 10.1038/s41586-018-0028-z

[2]

王军, 蒋亚东. 室温微测辐射热计太赫兹探测阵列技术研究进展(特邀)[J]. 红外与激光工程,2019,48(1):0102001. doi: 10.3788/IRLA201948.0102001

WANG J, JIANG Y D. Research development about room temperature terahertz detector array technology with microbolometer structure (invited)[J]. Infrared and Laser Engineering, 2019, 48(1): 0102001. (in Chinese) doi: 10.3788/IRLA201948.0102001

[3]

张猛蛟, 蔡毅, 江峰, 等. 紫外增强硅基成像探测器进展[J]. 中国光学,2019,12(1):19-37. doi: 10.3788/co.20191201.0019

ZHANG M J, CAI Y, JIANG F, et al. Silicon-based ultraviolet photodetection: progress and prospects[J]. Chinese Optics, 2019, 12(1): 19-37. (in Chinese) doi: 10.3788/co.20191201.0019

[4]

XIA F N, MUELLER T, LIN Y M, et al. Ultrafast graphene photodetector[J]. Nature Nanotechnology, 2009, 4(12): 839-843. doi: 10.1038/nnano.2009.292

[5]

罗曼, 吴峰, 张莉丽, 等. 二维材料偏振响应光电探测[J]. 南通大学学报(自然科学版),2019,18(3):1-10.

LUO M, WU F, ZHANG L L, et al. Detection of polarized light using two-dimensional atomic materials[J]. Journal of Nantong University (Natural Science Edition), 2019, 18(3): 1-10. (in Chinese)

[6]

公爽, 田金荣, 李克轩, 等. 新型二维材料在固体激光器中的应用研究进展[J]. 中国光学,2018,11(1):18-30. doi: 10.3788/co.20181101.0018

GONG SH, TIAN J R, LI K X, et al. Advances in new two-dimensional materials and its application in solid-state lasers[J]. Chinese Optics, 2018, 11(1): 18-30. (in Chinese) doi: 10.3788/co.20181101.0018

[7]

WANG F K, ZHANG Y, GAO Y, et al. 2D metal chalcogenides for IR photodetection[J]. Small, 2019, 15(30): 1901347. doi: 10.1002/smll.201901347

[8]

BULLOCK J, AMANI M, CHO J, et al. Polarization-resolved black phosphorus/molybdenum disulfide mid-wave infrared photodiodes with high detectivity at room temperature[J]. Nature Photonics, 2018, 12(10): 601-607. doi: 10.1038/s41566-018-0239-8

[9]

LI Y F, ZHANG Y T, YU Y, et al. Ultraviolet-to-microwave room-temperature photodetectors based on three-dimensional graphene foams[J]. Photonics Research, 2020, 8(3): 368-374. doi: 10.1364/PRJ.380249

[10]

何珂, 薛其坤. 拓扑量子材料与量子反常霍尔效应[J]. 材料研究学报,2019,29(3):161-177.

HE K, XUE Q K. Topological quantum materials and quantum anomalous hall effect[J]. Chinese Journal of Materials Research, 2019, 29(3): 161-177. (in Chinese)

[11]

崔亚宁, 任伟. 拓扑量子材料的研究进展[J]. 自然杂志,2019,41(5):348-357.

CUI Y N, REN W. Research advances of topological quantum materials[J]. Chinese Journal of Nature, 2019, 41(5): 348-357. (in Chinese)

[12]

GUI X, PLETIKOSIC I, CAO H B, et al. A new magnetic topological quantum material candidate by design[J]. ACS Central Science, 2019, 5: 900-910.

[13]

ZHANG T T, JIANG Y, SONG ZH D, et al. Catalogue of topological electronic materials[J]. Nature, 2019, 566(7745): 475-479. doi: 10.1038/s41586-019-0944-6

[14]

WANG A Q, YE X G, YU D P, et al. Topological semimetal nanostructures from properties to topotronics[J]. ACS nano, 2020, 14(4): 3755-3778.

[15]

GAO H, VENDERBOS J W F, KIN Y, et al. Topological semimetals from first principles[J]. Annual Review of Materials Research, 2019, 49: 153-83. doi: 10.1146/annurev-matsci-070218-010049

[16]

WANG SH, LIN B C, Wang A Q, et al. Quantum transport in Dirac and Weyl semimetals: a review[J]. Advances in Physics:X, 2017, 2(3): 518-544. doi: 10.1080/23746149.2017.1327329

[17]

DAS P K, DI SANTE D, CILENTO F, et al. Electronic properties of candidate type-Ⅱ Weyl semimetal WTe₂. a review perspective[J]. Electronic Structure, 2019, 1(1): 014003. doi: 10.1088/2516-1075/ab0835

[18]

SCHÜFFELGEN P, SCHMITT T, SCHLEENVOIGT M, et al. Exploiting topological matter for Majorana physics and devices[J]. Solid-State Electronics, 2019, 155: 99-104. doi: 10.1016/j.sse.2019.03.005

[19]

YUE Z J, WANG X L, GU M. Topological Insulator Materials for Advanced Optoelectronic Devices[M]. LUO H X. Advanced Topological Insulators. Beverly, MA, USA: Scrivener Publishing LLC, 2019: 45-70.

[20]

WANG H CH, WANG J. Electron transport in Dirac and Weyl semimetals[J]. Chinese Physics B, 2018, 27(10): 107402. doi: 10.1088/1674-1056/27/10/107402

[21]

张玉平, 唐利斌. 拓扑绝缘体光电探测器研究进展[J]. 红外技术,2020,42(1):1-9.

ZHANG Y P, TANG L B. Research progress in photodetectors based on topological insulators[J]. Infrared Technology, 2020, 42(1): 1-9. (in Chinese)

[22]

CHAN C K, LINDNER N H, REFAEL G, et al. Photocurrents in Weyl semimetals[J]. Physical Review B, 2017, 95(4): 041104. doi: 10.1103/PhysRevB.95.041104

[23]

MA J CH, DENG K, ZHENG L, et al. Experimental progress on layered topological semimetals[J]. 2D Materials, 2019, 6(3): 032001. doi: 10.1088/2053-1583/ab0902

[24]

ZHE SH, RUI C, KARIM K, et al. Two-dimensional tellurium: progress, challenges, and prospects[J]. Nano-Micro Letters, 2020, 12: 1-34.

[25]

HAN J Y, WANG J. Photodetectors based on two-dimensional materials and organic thin-film heterojunctions[J]. Chinese Physics B, 2019, 28(1): 017103. doi: 10.1088/1674-1056/28/1/017103

[26]

LI Y, SHI ZH F, LI X J, et al. Photodetectors based on inorganic halide perovskites: materials and devices[J]. Chinese Physics B, 2019, 28(1): 017803. doi: 10.1088/1674-1056/28/1/017803

[27]

WANG J, HAN J Y, CHEN X Q, et al. Design strategies for two-dimensional material photodetectors to enhance device performance[J]. InfoMat, 2019, 1(1): 33-53. doi: 10.1002/inf2.12004

[28]

胡伟达, 李庆, 陈效双, 等. 具有变革性特征的红外光电探测器[J]. 物理学报,2019,68(12):120701.

HU W D, LI Q, CHEN X SH, et al. Recent progress on advanced infrared photodetectors[J]. Acta Physica Sinica, 2019, 68(12): 120701. (in Chinese)

[29]

FANG Y R, GE Y Q, WANG C, et al. Mid-infrared photonics using 2D materials: status and challenges[J]. Laser &Photonics Reviews, 2020, 14(1): 1900098.

[30]

CHEN X Q, SHEHZAD K, GAO L, et al. Graphene hybrid structures for integrated and flexible optoelectronics[J]. Advanced Materials, 2020, 32(27): 1902039.

[31]

ZHANG CH, ZHANG Y, YUAN X, et al. Quantum hall effect based on Weyl orbits in Cd₃As₂[J]. Nature, 2019, 565(7739): 331-336. doi: 10.1038/s41586-018-0798-3

[32]

TANG F D, REN Y F, WANG P P, et al. Three-dimensional quantum hall effect and metal-insulator transition in ZrTe₅[J]. Nature, 2019, 569(7757): 537-541. doi: 10.1038/s41586-019-1180-9

[33]

VERGNIORY M G, ELCORO L, FELSER C, et al. A complete catalogue of high-quality topological materials[J]. Nature, 2019, 566(7745): 480-485. doi: 10.1038/s41586-019-0954-4

[34]

TANG F, PO H C, VISHWANATH A, et al. Comprehensive search for topological materials using symmetry indicators[J]. Nature, 2019, 566(7745): 486-489. doi: 10.1038/s41586-019-0937-5

[35]

ZHANG Y, ZHANG F, XU Y G, et al. Epitaxial growth of topological insulators on semiconductors (Bi₂Se₃/Te@Se) toward high-performance photodetectors[J]. Small Methods, 2019, 3(2): 1900349.

[36]

BHATTACHARYYA B, GUPTA A, SENGUTTUVAN T D, et al. Topological insulator based dual state photo-switch originating through bulk and surface conduction channels[J]. Physica Status Solidi (B), 2018, 255(9): 800340. doi: 10.1002/pssb.201800340

[37]

CULCER D, KESER A C, LI Y Q, et al. Transport in two-dimensional topological materials: recent developments in experiment and theory[J]. 2D Materials, 2020, 7(2): 022007. doi: 10.1088/2053-1583/ab6ff7

[38]

BERNEVIG B A, HUGHES T L, ZHANG SH CH. Quantum spin hall effect and topological phase transition in HgTe quantum wells[J]. Science, 2006, 314(5806): 1757-1761. doi: 10.1126/science.1133734

[39]

KÖNIG M, BUHMANN H, MOLENKAMP L W, et al. The quantum spin hall effect: theory and experiment[J]. Journal of the Physical Society of Japan, 2008, 77(3): 031007. doi: 10.1143/JPSJ.77.031007

[40]

LIU CH X, HUGHES T L, QI X L, et al. Quantum spin hall effect in inverted type-Ⅱ semiconductors[J]. Physical Review Letters, 2008, 100(23): 236601. doi: 10.1103/PhysRevLett.100.236601

[41]

LIU C W, WANG ZH H, QIU R L J, et al. Development of topological insulator and topological crystalline insulator nanostructures[J]. Nanotechnology, 2020, 31(19): 192001. doi: 10.1088/1361-6528/ab6dfc

[42]

SWATEK P, WU Y, WANG L L, et al.. Gapless Dirac surface states in the antiferromagnetic topological insulator MnBi₂Te₄[J]. arXiv: 1907.09596, 2019.

[43]

LI ZH, LI J H, HE K, et al.. Tunable interlayer magnetism and band topology in van der Waals heterostructures of MnBi₂Te₄-family materials[J]. arXiv: 2003.13485, 2020.

[44]

FU L. Topological crystalline insulators[J]. Physical Review Letters, 2011, 106(10): 106802. doi: 10.1103/PhysRevLett.106.106802

[45]

LI Z, SHAO S, LI N, et al. Single crystalline nanostructures of topological crystalline insulator SnTe with distinct facets and morphologies[J]. Nano Letters, 2013, 13(11): 5443-5448. doi: 10.1021/nl4030193

[46]

HSIEH T H, LIN H, LIU J W, et al. Topological crystalline insulators in the SnTe material class[J]. Nature Communications, 2012, 3(1): 982. doi: 10.1038/ncomms1969

[47]

SCHOOP L M, DAI X, CAVA R J, et al. Special topic on topological semimetals-new directions[J]. APL Materials, 2020, 8(3): 030401. doi: 10.1063/5.0006015

[48]

YAN M ZH, HUANG H Q, ZHANG K N, et al. Lorentz-violating type-Ⅱ Dirac fermions in transition metal dichalcogenide PtTe₂[J]. Nature Communications, 2017, 8(1): 257. doi: 10.1038/s41467-017-00280-6

[49]

KUSHWAHA S K, KRIZAN J W, FELDMAN B E, et al. Bulk crystal growth and electronic characterization of the 3D Dirac semimetal Na₃Bi[J]. APL Materials, 2015, 3(4): 041504. doi: 10.1063/1.4908158

[50]

HUANG C, ZHOU B T, ZHANG H Q, et al. Proximity-induced surface superconductivity in Dirac semimetal Cd₃As₂[J]. Nature Communications, 2019, 10(1): 2217. doi: 10.1038/s41467-019-10233-w

[51]

GUO J, HUANG Y, WU X SH, et al. Thickness-dependent in-plane thermal conductivity and enhanced thermoelectric performance in p-Type ZrTe₅ nanoribbons[J]. Physica Status Solidi (RRL)-Rapid Research Letters, 2019, 13(3): 1800529. doi: 10.1002/pssr.201800529

[52]

LV B Q, WENG H M, FU B B, et al. Experimental discovery of Weyl semimetal TaAs[J]. Physical Review X, 2015, 5(3): 031013. doi: 10.1103/PhysRevX.5.031013

[53]

SUN Y, WU SH CH, YAN B H. Topological surface states and Fermi arcs of the noncentrosymmetric Weyl semimetals TaAs, TaP, NbAs, and NbP[J]. Physical Review B, 2015, 92(11): 115428. doi: 10.1103/PhysRevB.92.115428

[54]

ZHANG CH, NI ZH L, ZHANG J L, et al. Ultrahigh conductivity in Weyl semimetal NbAs nanobelts[J]. Nature Materials, 2019, 18(5): 482-488. doi: 10.1038/s41563-019-0320-9

[55]

SOLUYANOV A A, GRESCH D, WANG ZH J, et al. Type-Ⅱ Weyl semimetals[J]. Nature, 2015, 527(7579): 495-498. doi: 10.1038/nature15768

[56]

DENG K, WAN G L, DENG P, et al. Experimental observation of topological Fermi arcs in type-Ⅱ Weyl semimetal MoTe₂[J]. Nature Physics, 2016, 12(12): 1105-1110. doi: 10.1038/nphys3871

[57]

MA J CH, GU Q Q, LIU Y N, et al. Nonlinear photoresponse of type-Ⅱ Weyl semimetals[J]. Nature Materials, 2019, 18(5): 476-481. doi: 10.1038/s41563-019-0296-5

[58]

ZHANG X, WANG J, ZHANG SH CH. Topological insulators for high-performance terahertz to infrared applications[J]. Physical Review B, 2010, 82(24): 245107. doi: 10.1103/PhysRevB.82.245107

[59]

YAN Y, LIAO ZH M, KE X X, et al. Topological surface state enhanced photothermoelectric effect in Bi₂Se₃ nanoribbons[J]. Nano Letters, 2014, 14(8): 4389-4394. doi: 10.1021/nl501276e

[60]

SHARMA A, BHATTACHARYYA B, SRIVASTAVA A K, et al. High performance broadband photodetector using fabricated nanowires of bismuth selenide[J]. Scientific Reports, 2016, 6(1): 19138. doi: 10.1038/srep19138

[61]

LIU CH, ZHANG H B, SUN ZH, et al. Topological insulator Bi₂Se₃ nanowire/Si heterostructure photodetectors with ultrahigh responsivity and broadband response[J]. Journal of Materials Chemistry C, 2016, 4(24): 5648-5655. doi: 10.1039/C6TC01083K

[62]

DAS B, DAS N S, SARKAR S, et al. Topological insulator Bi₂Se₃/Si-nanowire-based p-n junction diode for high-performance near-infrared photodetector[J]. ACS Applied Materials &Interfaces, 2017, 9(27): 22788-22798.

[63]

ZHENG W SH, XIE T, ZHOU Y, et al. Patterning two-dimensional chalcogenide crystals of Bi₂Se₃ and In₂Se₃ and efficient photodetectors[J]. Nature Communications, 2015, 6(1): 6972. doi: 10.1038/ncomms7972

[64]

TANG W W, POLITANO A, GUO CH, et al. Ultrasensitive room-temperature terahertz direct detection based on a bismuth Selenide topological insulator[J]. Advanced Functional Materials, 2018, 28(31): 1801786. doi: 10.1002/adfm.201801786

[65]

KIM J, PARK S, JANG H, et al. Highly sensitive, gate-tunable, room-temperature mid-infrared photodetection based on graphene-Bi₂Se₃ heterostructure[J]. ACS Photonics, 2017, 4(3): 482-488. doi: 10.1021/acsphotonics.6b00972

[66]

YANG M, HAN Q, LIU X CH, et al. Ultrahigh stability 3D TI Bi₂Se₃/MoO₃ thin film Heterojunction infrared Photodetector at optical communication waveband[J]. Advanced Functional Materials, 2020, 30(12): 1909659. doi: 10.1002/adfm.201909659

[67]

TANG Y X, JIANG T, ZHOU T, et al. Ultrafast exciton transfer in perovskite CsPbBr₃ quantum dots/topological insulator Bi₂Se₃ film heterostructure[J]. Nanotechnology, 2019, 30(32): 325702. doi: 10.1088/1361-6528/ab166f

[68]

LIANG F X, LAING L, ZHAO X Y, et al. A sensitive broadband (UV-vis-NIR) perovskite photodetector using topological insulator as electrodes[J]. Advanced Optical Materials, 2019, 7(4): 1801392.

[69]

YAO J D, SHAO J M, LI S W, et al. Polarization dependent photocurrent in the Bi₂Te₃ topological insulator film for multifunctional photodetection[J]. Scientific Reports, 2015, 5(1): 14184. doi: 10.1038/srep14184

[70]

YAO J D, ZHENG ZH Q, YANG G W. Layered-material WS₂/topological insulator Bi₂Te₃ heterostructure photodetector with ultrahigh responsivity in the range from 370 to 1550 nm[J]. Journal of Materials Chemistry C, 2016, 4(33): 7831-7840. doi: 10.1039/C6TC01453D

[71]

YAO J D, ZHENG ZH Q, YANG G W. All-layered 2D optoelectronics: a high-performance UV-vis-NIR broadband SnSe Photodetector with Bi₂Te₃ topological insulator electrodes[J]. Advanced Functional Materials, 2017, 27(33): 1701823. doi: 10.1002/adfm.201701823

[72]

YANG M, WANG J, ZHAO Y F, et al. Three-dimensional topological insulator Bi₂Te₃/Organic thin film heterojunction photodetector with fast and wideband response from 450 to 3500 nanometers[J]. ACS Nano, 2018, 13(1): 755-763.

[73]

YANG M, WANG J, ZHAO Y F, et al. Polarimetric three-dimensional topological insulators/organics thin film heterojunction photodetectors[J]. ACS Nano, 2019, 13(9): 10810-10817. doi: 10.1021/acsnano.9b05775

[74]

SHARMA A, SENGUTTUVAN T D, OJHA V N, et al. Novel synthesis of topological insulator based nanostructures (Bi₂Te₃) demonstrating high performance photodetection[J]. Scientific Reports, 2019, 9(1): 3804. doi: 10.1038/s41598-019-40394-z

[75]

QIAO H, YUAN J, XU Z Q, et al. Broadband photodetectors based on graphene-Bi₂Te₃ heterostructure[J]. ACS Nano, 2015, 9(2): 1886-1894. doi: 10.1021/nn506920z

[76]

LIU H W, ZHU X L, SUN X X, et al. Self-powered broad-band photodetectors based on vertically stacked WSe₂/Bi₂Te₃p-n heterojunctions[J]. ACS Nano, 2019, 13(11): 13573-13580. doi: 10.1021/acsnano.9b07563

[77]

ZHENG K, LUO L B, ZHANG T F, et al. Optoelectronic characteristics of a near infrared light photodetector based on a topological insulator Sb₂Te₃ film[J]. Journal of Materials Chemistry C, 2015, 3(35): 9154-9160. doi: 10.1039/C5TC01772F

[78]

SUN H H, JIANG T, ZANG Y Y, et al. Broadband ultrafast photovoltaic detectors based on large-scale topological insulator Sb₂Te₃/STO heterostructures[J]. Nanoscale, 2017, 9(27): 9325-9332. doi: 10.1039/C7NR01715D

[79]

LIU H W, LI D, MA CH, et al. Van der Waals epitaxial growth of vertically stacked Sb₂Te₃/MoS₂ p–n heterojunctions for high performance optoelectronics[J]. Nano Energy, 2019, 59: 66-74. doi: 10.1016/j.nanoen.2019.02.032

[80]

HUANG S M, HUANG S J, YAN Y J, et al. Extremely high-performance visible light photodetector in the Sb₂SeTe₂ nanoflake[J]. Scientific Reports, 2017, 7(1): 45413. doi: 10.1038/srep45413

[81]

AHER R, BHORDE A, NAIR S, et al. Solvothermal growth of PbBi₂Se₄ nano-flowers: a material for humidity sensor and photodetector applications[J]. Physica Status Solidi (A), 2019, 216(11): 1900065. doi: 10.1002/pssa.201900065

[82]

SAFDAR M, WANG Q SH, MIRZA M, et al. Topological surface transport properties of single-crystalline SnTe nanowire[J]. Nano Letters, 2013, 13(11): 5344-5349. doi: 10.1021/nl402841x

[83]

JIANG T, ZANG Y Y, SUN H H. Broadband high-responsivity photodetectors based on large-scale topological crystalline insulator SnTe ultrathin film grown by molecular beam epitaxy[J]. Advanced Optical Materials, 2017, 5(5): 1600727. doi: 10.1002/adom.201600727

[84]

YANG J, YU W ZH, PAN ZH H, et al. Ultra-broadband flexible photodetector based on topological crystalline insulator SnTe with high responsivity[J]. Small, 2018, 14(37): 1802598. doi: 10.1002/smll.201802598

[85]

GU S H, DING K, PAN J, et al. Self-driven, broadband and ultrafast photovoltaic detectors based on topological crystalline insulator SnTe/Si heterostructures[J]. Journal of Materials Chemistry A, 2017, 5(22): 11171-11178. doi: 10.1039/C7TA02222K

[86]

ZHANG H B, MAN B Y, ZHANG Q. Topological crystalline insulator SnTe/Si vertical heterostructure photodetectors for high-performance near-infrared detection[J]. ACS Applied Materials &Interfaces, 2017, 9(16): 14067-14077.

[87]

ZHANG H B, SONG Z L, LI D, et al. Near-infrared photodetection based on topological insulator P-N heterojunction of SnTe/Bi₂Se₃[J]. Applied Surface Science, 2020, 509: 145290. doi: 10.1016/j.apsusc.2020.145290

[88]

CONTE A M, PULCI O, BECHSTEDT F. Electronic and optical properties of topological semimetal Cd₃As₂[J]. Scientific Reports, 2017, 7(1): 45500. doi: 10.1038/srep45500

[89]

WANG Q SH, LI C ZH, GE SH F, et al. Ultrafast broadband photodetectors based on three-dimensional Dirac semimetal Cd₃As₂[J]. Nano Letters, 2017, 17(2): 834-841. doi: 10.1021/acs.nanolett.6b04084

[90]

YAVARISHAD N, HOSSEINI T, KHEIRANDISH E, et al. Room-temperature self-powered energy photodetector based on optically induced Seebeck effect in Cd₃As₂[J]. Applied Physics Express, 2017, 10(5): 052201. doi: 10.7567/APEX.10.052201

[91]

HUANG Z H, JIANG Y D, HAN Q, et al. High responsivity and fast UV-Vis-SWIR photodetector based on Cd₃As₂/MoS₂ heterojunction[J]. Nanotechnology, 2019, 31(6): 064001.

[92]

WU Y F, ZHANG L, LI C ZH, et al. Dirac semimetal heterostructures: 3D Cd₃As₂ on 2D Graphene[J]. Advanced Materials, 2018, 30(34): 1707547. doi: 10.1002/adma.201707547

[93]

YANG M, WANG J, HAN J Y, et al. Enhanced performance of wideband room temperature photodetector based on Cd₃As₂ thin film/Pentacene heterojunction[J]. ACS Photonics, 2018, 5(8): 3438-3445. doi: 10.1021/acsphotonics.8b00727

[94]

YANG M, WANG J, YANG Y K, et al. Ultraviolet to long-wave infrared photodetectors based on a three- dimensional Dirac semimetal/organic thin film heterojunction[J]. The Journal of Physical Chemistry Letters, 2019, 10(14): 3914-3921. doi: 10.1021/acs.jpclett.9b01619

[95]

LÉONARD F, YU W L, COLLINS K C, et al. Strong photothermoelectric response and contact reactivity of the Dirac semimetal ZrTe₅[J]. ACS Applied Materials &Interfaces, 2017, 9(42): 37041-37047.

[96]

YU X CH, YU P, WU D, et al. Atomically thin noble metal dichalcogenide: a broadband mid-infrared semiconductor[J]. Nature Communications, 2018, 9(1): 1545. doi: 10.1038/s41467-018-03935-0

[97]

XU H, GUO CH, ZHANG J ZH, et al. PtTe₂-based type-Ⅱ dirac semimetal and its van der waals heterostructure for sensitive room temperature terahertz photodetection[J]. Small, 2019, 15(52): 1903362. doi: 10.1002/smll.201903362

[98]

CHI SH M, LI ZH L, XIE Y, et al. A wide-range photosensitive Weyl semimetal single crystal-TaAs[J]. Advanced Materials, 2018, 30(43): 1801372-1801379. doi: 10.1002/adma.201801372

[99]

OSTERHOUDT G B, DIEBEL L K, GRAY M J, et al. Colossal mid-infrared bulk photovoltaic effect in a type-I Weyl semimetal[J]. Nature Materials, 2019, 18(5): 471-475. doi: 10.1038/s41563-019-0297-4

[100]

LAI J W, LIU X, MA J CH, et al. Anisotropic broadband photoresponse of layered type-Ⅱ Weyl semimetal MoTe₂[J]. Advanced Materials, 2018, 30(22): 1707152-1707159. doi: 10.1002/adma.201707152

[101]

WANG Q SH, ZHENG J CH, HE Y, et al. Robust edge photocurrent response on layered type Ⅱ Weyl semimetal WTe₂[J]. Nature Communications, 2019, 10(1): 5736. doi: 10.1038/s41467-019-13713-1

[102]

ZHOU W, CHEN J ZH, GAO H, et al. Anomalous and polarization-sensitive photoresponse of T_d-WTe₂ from visible to infrared light[J]. Advanced Materials, 2019, 31(5): 1804629-1804636. doi: 10.1002/adma.201804629

[103]

LAI J W, LIU Y N, MA J CH, et al. Broadband anisotropic photoresponse of the “hydrogen atom” version type-Ⅱ Weyl semimetal candidate TaIrTe[J]. ACS Nano, 2018, 12(4): 4055-4061. doi: 10.1021/acsnano.8b01897

[104]

LU ZH J, XU Y, YU Y Q, et al. Ultrahigh speed and broadband few-layer MoTe₂/Si 2D-3D heterojunction-based photodiodes fabricated by pulsed laser deposition[J]. Advanced Functional Materials, 2020, 30(9): 1907951. doi: 10.1002/adfm.201907951

[105]

CHEN W J, LIANG R R, ZHANG SH Q, et al. Ultrahigh sensitive near-infrared photodetectors based on MoTe₂/germanium heterostructure[J]. Nano Research, 2020, 13(1): 127-132. doi: 10.1007/s12274-019-2583-5

[106]

YU W ZH, LI SH J, ZHANG Y P, et al. Near-infrared photodetectors based on MoTe₂/graphene heterostructure with high responsivity and flexibility[J]. Small, 2017, 13(24): 1700268. doi: 10.1002/smll.201700268

[107]

LIU Y J, LIU CH, WANG X M, et al. Photoresponsivity of an all-semimetal heterostructure based on graphene and WTe₂[J]. Scientific Reports, 2018, 8(1): 12840. doi: 10.1038/s41598-018-29717-8

[108]

LU M Y, CHANG Y T, CHEN H J. Efficient self-driven photodetectors featuring a mixed-dimensional van der waals heterojunction formed from a CdS nanowire and a MoTe₂ flake[J]. Small, 2018, 14(40): 1802302. doi: 10.1002/smll.201802302

[109]

MAKINO K, KUROMIYA S, TAKANO K, et al. THz pulse detection by multilayered GeTe/Sb₂Te₃[J]. ACS Applied Materials &Interfaces, 2016, 8(47): 32408-32413.

[110]

WANG X T, CUI Y, LI T, et al. Recent advances in the functional 2D photonic and optoelectronic devices[J]. Advanced Optical Materials, 2019, 7(3): 1801274. doi: 10.1002/adom.201801274

[111]

ROGALSKI A, KOPYTKO M, MARTYNIUK P. Two-dimensional infrared and terahertz detectors: outlook and status[J]. Applied Physics Reviews, 2019, 6(2): 021316. doi: 10.1063/1.5088578

[112]

杨旗, 申钧, 魏兴战, 等. 基于石墨烯的红外探测机理与器件结构研究进展[J]. 红外与激光工程,2020,49(1):0103003.

YANG Q, SHEN J, WEI X ZH, et al. Recent progress on the mechanism and device structure of graphene-based infrared detectors[J]. Infrared and Laser Engineering, 2020, 49(1): 0103003. (in Chinese)

[113]

YE L, LI H, CHEN Z F, et al. Near-infrared photodetector based on MoS₂/Black phosphorus heterojunction[J]. ACS Photonics, 2016, 3(4): 692-699. doi: 10.1021/acsphotonics.6b00079

[114]

HUANG ZH ZH, ZHANG T F, LIU J K, et al. Amorphous MoS₂ photodetector with ultra-broadband response[J]. ACS Applied Electronic Materials, 2019, 1(7): 1314-1321. doi: 10.1021/acsaelm.9b00247

[115]

ZHU W K, YAN F G, WEI X, et al. Broadband and fast photodetectors based on multilayer p-MoTe₂/n-WS₂ heterojunction with graphene electrodes[J]. Advanced Materials Letters, 2019, 10(5): 329-333. doi: 10.5185/amlett.2019.2281

[116]

TSAI T H, LIANG ZH Y, LIN Y CH, et al. Photogating WS₂ photodetectors using embedded WSe₂ charge puddles[J]. ACS Nano, 2020, 14(4): 4559-4566. doi: 10.1021/acsnano.0c00098

[117]

SUN J CH, WANG Y Y, GUO SH Q, et al. Lateral 2D WSe₂ p–n homojunction formed by efficient charge-carrier-type modulation for high-performance optoelectronics[J]. Advanced Materials, 2020, 32(9): 1906499. doi: 10.1002/adma.201906499

[118]

ZHENG ZH Q, ZHANG T M, YAO J D, et al. Flexible, transparent and ultra-broadband photodetector based on large-area WSe₂ film for wearable devices[J]. Nanotechnology, 2016, 27(22): 225501. doi: 10.1088/0957-4484/27/22/225501

[119]

DU Y P, BO X Y, WANG D, et al. Emergence of topological nodal lines and type-Ⅱ Weyl nodes in the strong spin-orbit coupling system InNbX₂(X=S, Se)[J]. Physical Review B, 2017, 96(23): 235152. doi: 10.1103/PhysRevB.96.235152

[120]

YUAN Y F, WANG W K, ZHOU Y H, et al. Pressure-induced superconductivity in topological semimetal candidate TaTe₄[J]. Advanced Electronic Materials, 2020, 6(3): 1901260. doi: 10.1002/aelm.201901260