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二维材料异质结高灵敏度红外探测器

张金月 吕俊鹏 倪振华

张金月, 吕俊鹏, 倪振华. 二维材料异质结高灵敏度红外探测器[J]. 中国光学(中英文), 2021, 14(1): 87-99. doi: 10.37188/CO.2020-0139
引用本文: 张金月, 吕俊鹏, 倪振华. 二维材料异质结高灵敏度红外探测器[J]. 中国光学(中英文), 2021, 14(1): 87-99. doi: 10.37188/CO.2020-0139
ZHANG Jin-yue, LYU Jun-peng, NI Zhen-hua. Highly sensitive infrared detector based on a two-dimensional heterojunction[J]. Chinese Optics, 2021, 14(1): 87-99. doi: 10.37188/CO.2020-0139
Citation: ZHANG Jin-yue, LYU Jun-peng, NI Zhen-hua. Highly sensitive infrared detector based on a two-dimensional heterojunction[J]. Chinese Optics, 2021, 14(1): 87-99. doi: 10.37188/CO.2020-0139

二维材料异质结高灵敏度红外探测器

doi: 10.37188/CO.2020-0139
基金项目: 国家重点基础研究发展计划(No. 2017YFA0205700, No. 2019YFA0308000);国家自然科学基金资助项目(No. 61774034, No. 91963130)
详细信息
    作者简介:

    张金月(1998—),女,山东德州人,硕士研究生,2019年于曲阜师范大学获得学士学位,主要从事二维材料红外探测器的研究。E-mail:m17853727134@163.com

    吕俊鹏(1986—),男,山东莱阳人,博士,2009年于山东大学光信息科学与技术专业获得学士学位,2013年于新加坡国立大学获得博士学位,主要从事光谱与光电子学研究。E-mail:phyljp@seu.edu.cn

    倪振华(1982—),男,浙江金华人,博士,2003年于上海交通大学获得学士学位,2007年于新加坡国立大学获得博士学位,主要从事光谱与光电子学研究。E-mail:zhni@seu.edu.cn

  • 中图分类号: O47

Highly sensitive infrared detector based on a two-dimensional heterojunction

Funds: Supported by National Basic Research & Development plan of China (No. 2017YFA0205700, No. 2019YFA0308000); National Natural Science Foundation of China (No. 61774034, No. 91963130)
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  • 摘要: 要想实现弱光探测,需要探测器具有高灵敏度。石墨烯、过渡金属硫化物、黑磷等二维材料因具有宽光谱吸收、带隙可调、高载流子迁移率等良好的光学与电学性能,广泛应用于红外探测器的制作,然而这些材料存在弱光吸收、载流子迁移率低、空气稳定性差等问题,制约了其在高灵敏度红外探测领域的应用。同单一的二维材料相比,二维材料异质结不仅具有各单一材料的特点,而且由于两种材料的结合展现出新颖的物理特性,近年来在高灵敏度红外探测领域得到了广泛研究。本文基于影响灵敏度的主要因素,分析总结了提高红外探测器灵敏度的主要策略,回顾了近几年基于二维材料异质结高灵敏度红外探测器的发展,总结了其主要性能指标,最后指出了进一步提升红外探测灵敏度所面临的挑战,从如何平衡探测器响应度与响应速度、大面积二维异质结制备、异质结界面优化利用等方面展望了如何获得综合性能良好的高灵敏度红外探测器以及实现探测器商业应用,以期对高灵敏度红外探测领域的发展提供一定的指导意见。

     

  • 图 1  基于二维异质结的低暗电流近红外探测器。(a)上图:基于MoS2/石墨烯/WSe2异质结构光电探测器的光学图像[42],比例尺:5 µm;下图:异质结器件示意图[42];(b)光响应度R(左)和比探测率D*(右)在400到2400 nm范围内随波长的变化[42];(c)基于MoS2/Si异质结光电探测器的示意图[43];(d)808 nm激光照射下,光响应度R(左)和比探测率D*(右)随光功率的变化[43]

    Figure 1.  Near-infrared detector based on two-dimensional heterojunction with a low current. (a) Upper panel: optical image of the MoS2/graphene/WSe2 heterostructure photodetector[39], scale bar is 5 µm. Bottom panel: schematic diagram of a heterojunction device[42]. (b) Photoresponsivity R (left) and specific detectivity D*(right) vary with wavelength in the range of 400 to 2400 nm[42]. (c) Schematic diagram of a MoS2/Si heterojunction photodetector[43]. (d) Photoresponsivity R (left) and detectivity D* (right) vary with optical power under 808 nm laser irradiation[43]

    图 2  基于二维异质结的高增益红外探测器

    Figure 2.  Infrared detector with high gain based on a two-dimension heterojunction

    表  1  二维异质结高灵敏红外探测器的主要性能指标

    Table  1.   Key performance parameters of high-sensitivity infrared detectors based on a two-dimensional heterojunction

    探测器类型材料响应波长/nm响应度/(A·W−1)响应时间比探测率/Jones参考文献
    低暗电流探测器MoS2/石墨烯/WSe2400~2400可见光:104
    2400 nm:0.1
    53.6/30.3 µs可见光:1015
    2400 nm:109
    42
    MoS2/Si350~11003/40 µs880 nm:101343
    PtSe2/CdTe200~2000780 nm:0.5068.1/43.6 µs780 nm:4.2×101144
    WS2/GaAs200~1500808 nm:0.52721.8/49.6 µs808 nm: 1.03×101445
    BP/MoS2可见光-中红外3.7/4 µs3.8 µm:1.2×101019
    BP/InSe可见光-中红外20
    MoS2/CdTe200~1700780 nm: 0.036643.7/82.1µs780 nm:6.1×101048
    PtSe2/Si纳米线200~1550780 nm:12.6510.1/19.5 µs780 nm:101349
    石墨烯/碳纳米带300~1100980 nm:0.20968/78 µs980 nm:4.87×101050
    还原氧化石墨烯/MoS2/Si350~4300808 nm:21.82.8/46.6 µs808 nm:3.8×101551
    WS2/Si200~3043980 nm:8.316/29 µs980 nm:4.6×101452
    高光增益探测器石墨烯/PbS量子点可见光-短波近红外600 nm:5×10710/100 ms600 nm:7×101329
    MoS2/HgTe量子点600~2100可见光:5 ×103可见光:6.4×1012
    2 µm:1012
    53
    BP/WSe2400~1600637 nm:103
    1550 nm:0.5
    0.8/0.8 ms637 nm:1014
    1550 nm:1010
    54
    MoS2/PbS量子点400~1500635 nm:6×1050.3~0.4 s635 nm:5×101155
    PbI2/WS2500~1000450 nm:7.1×10424/33 ms450 nm:4.9×101356
    WSe2/In2O3550~1300940 nm:3.5×10420 ms940 nm:1.95×101657
    石墨烯/WS2/石墨烯可见-近红外700 nm:2.5×10240~65 µs700 nm:2.2×101258
    PdSe2/MoS2405−1060010.6 µm:42.174.5/93.1 ms10.6 µm:8.21×10959
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  • 收稿日期:  2020-08-12
  • 修回日期:  2020-09-07
  • 网络出版日期:  2020-12-25
  • 刊出日期:  2021-01-25

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