CCD/EMCCD光电参数测试系统：设计与使用

沈吉; V. Zabudsky VIACHESLAV; 常维静; 那启跃; 简云飞; V. Rikhalsky OLEG; G. Golenkov OLEKSANDR; P. Reva VOLODYMYR

doi:10.37188/CO.EN-2023-0016

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Chinese Optics > 2024 > Accepted Manuscript

SHEN Ji, VIACHESLAV V. Zabudsky, CHANG Wei-jing, NA Qi-yue, JIAN Yun-fei, OLEG V. Rikhalsky, OLEKSANDR G. Golenkov, VOLODYMYR P. Reva. CCD/EMCCD Photoelectronic Parameter Test System: Design and Use[J]. Chinese Optics. doi: 10.37188/CO.EN-2023-0016

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CCD/EMCCD Photoelectronic Parameter Test System: Design and Use

doi: 10.37188/CO.EN-2023-0016

1.
East China Institute of Optoelectronic Integrated Devices, Suzhou 215263, China
2.
V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, Kyiv 01001, Ukraine
3.
Bogomoletz Institute of Physiology of NAS of Ukraine, Kyiv 01001, Ukraine

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Author Bio:
沈　吉（1988—），男，江苏海门人，硕士研究生，高级工程师，从事光电探测器件与组件科研开发。E-mail：njustshenji@126.com
Corresponding author: njustshenji@126.com
Received Date: 04 Jul 2023
Accepted Date: 28 Aug 2023

Available Online: 12 Sep 2023

Abstract

Abstract

This paper outlines the design and usage of equipment developed to measure the photoelectrical parameters of CCD and electron-multiplying charge-coupled device (EMCCD) chips. The test system’s automatic and manual modes provide measurements of dark currents, the output amplifier’s responsivity, charge transfer efficiency, charge capacity, and other parameters. The system can be configured for measurements of different formats and architectures (CCD/EMCCD) both on wafer and in package. The developed equipment was used for 576 × 288, 640 × 512, 768 × 576, 1024 × 1024, 1280 × 1024 CCD and EMCCD chip testing and sorting.
- CCD,
- EMCCD,
- test system,
- photoelectrical parameters

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References(16)

References

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