超薄氮化镓基LED悬空薄膜的制备及表征

李欣; 沙源清; 蒋成伟; 王永进

doi:10.37188/CO.2019-0192

Volume 13 Issue 4

Aug. 2020

Turn off MathJax

Article Contents

Chinese Optics > 2020 > 13(4): 873-883.

LI Xin, SHA Yuan-qing, JIANG Cheng-wei, WANG Yong-jin. Fabrication and characterization of ultra-thin GaN-based LED freestanding membrane[J]. Chinese Optics, 2020, 13(4): 873-883. doi: 10.37188/CO.2019-0192

Citation:

LI Xin, SHA Yuan-qing, JIANG Cheng-wei, WANG Yong-jin. Fabrication and characterization of ultra-thin GaN-based LED freestanding membrane[J]. Chinese Optics, 2020, 13(4): 873-883. doi: 10.37188/CO.2019-0192

Citation:

PDF( 1097 KB)

Fabrication and characterization of ultra-thin GaN-based LED freestanding membrane

doi: 10.37188/CO.2019-0192

College of Telecommunications and Information, Nanjing University of Posts and Telecommunications, Nanjing 210003, China

Funds: China Postdoctoral Science Foundation funded project (No. 2018M640508); Natural Science Foundation of the Jiangsu Higher Education Institutions (No. 18KJB510025); 1311 Talent Program of Nanjing University of Posts and Telecommunications; National Self-funding Project of Nanjing University of Posts and Telecommunications (No. NY218013)

More Information

Author Bio:
LI Xin (1984—), Female, born in Sanyuan County, Shaanxi Province. She is a doctor. She obtained her PhD from Xi'an Jiaotong University in 2013. Now she is an associate professor in the School of Communication and Information Engineering, Nanjing University of Posts and Telecommunications. She is mainly engaged in the research of GaN-on-silicon optoelectronic devices E-mail: lixin1984@njupt.edu.cn
Corresponding author: lixin1984@njupt.edu.cn
Received Date: 25 Sep 2019
Rev Recd Date: 13 Nov 2019
Publish Date: 01 Aug 2020

Abstract

Abstract

In order to deliver the emergent light of Light Emitting Diode (LED) active layer easily, we studied the fabrication process, morphological characterization and optical characterization of submicron-level LED freestanding membrane. We prepared ultra-thin GaN-based LED freestanding membrane based on GaN-on-silicon wafer by using the backside process with photolithography, deep reactive ion etching and fast atom beam etching. Through a white light interferometer, we found that the deformation of the prepared ultra-thin LED freestanding membrane is positively correlated with the diameter of membrane, but negatively correlated with the thickness of membrane. The deformation as a whole is a smooth nanoscale arch deformation. Through the reflection spectrum test, we found that the number of reflection modes of LED freestanding membrane is much smaller than that of unprocessed silicon-based gallium nitride wafer and that the overall light intensity of reflection spectrum of the membrane is obviously improved. In the photoluminescence test, we found that due to the stress release, the emergent spectral peak of LED freestanding membrane has a blue shift of 8.2 nm compared with silicon-based gallium nitride wafer. Moreover, obvious outgoing light can be detected on the backside of the ultra-thin LED freestanding membrane with most of epitaxial layer removed. It demonstrates that LED freestanding membrane is more beneficial to deliver the emitted light in the photoluminescence test. In this study, the LED freestanding membrane with small thickness, large area, small deformation and excellent optical properties has been realized. It provides a new way for the application of GaN-based LED in the field of Micro-Optical Mechanic Electronic System (MOMES).
- gallium nitride,
- freestanding membrane,
- LED,
- reflection spectrum,
- photoluminescence

FullText(HTML)

References(20)

References

[1]	PEARTON S J, ZOLPER J C, SHUL R J, et al. GaN: processing, defects, and devices[J]. Journal of Applied Physics, 1999, 86(1): 1-78.
[2]	ZHANG Y H, DADGAR A, PALACIOS T. Gallium nitride vertical power devices on foreign substrates: a review and outlook[J]. Journal of Physics D:Applied Physics, 2018, 51(27): 273001. doi: 10.1088/1361-6463/aac8aa
[3]	NAKAMURA S, PEATRON S, FASOL G. The Blue Laser Diode: the Complete Story[M]. 2nd ed. Berlin: Springer, 2000.
[4]	ALHASSAN A I, YOUNG E C, ALYAMANI A Y, et al. Reduced-droop green III-nitride light-emitting diodes utilizing GaN tunnel junction[J]. Applied Physics Express, 2018, 11(4): 042101. doi: 10.7567/APEX.11.042101
[5]	LI B, REN Y, CHANG B K. Stability of gradient-doping GaN photocathode[J]. Chinese Optics, 2018, 11(4): 677-683. (in Chinese) doi: 10.3788/co.20181104.0677
[6]	MORELLE C, THÉRON D, DERLUYN J, et al. Gallium nitride MEMS resonators: how residual stress impacts design and performances[J]. Microsystem Technologies, 2018, 24(1): 371-377. doi: 10.1007/s00542-017-3293-0
[7]	YANG ZH CH, LÜ J N, YAN G ZH, et al. Fabrication of GaN-based MEMS structures using dry-etch technique[J]. Nanotechnology and Precision Engineering, 2011, 9(1): 78-82. doi: 10.3969/j.issn.1672-6030.2011.01.015
[8]	LI X, SHI ZH, HE SH M, et al. MEMS-tunable Ⅲ-nitride grating on silicon substrate[J]. Optics and Precision Engineering, 2014, 22(11): 2945-2949. (in Chinese) doi: 10.3788/OPE.20142211.2945
[9]	TABATABA-VAKILI F, ROLAND I, TRAN T M, et al. Q factor limitation at short wavelength (around 300 nm) in III-nitride-on-silicon photonic crystal cavities[J]. Applied Physics Letters, 2017, 111(13): 131103. doi: 10.1063/1.4997124
[10]	PRABASWARA A, MIN J W, ZHAO CH, et al. Direct growth of III-nitride nanowire-based yellow light-emitting diode on amorphous quartz using thin Ti interlayer[J]. Nanoscale Research Letters, 2018, 13(1): 41. doi: 10.1186/s11671-018-2453-1
[11]	LI T P, ZHAO G ZH, LU T P, et al. Effect of Undoped GaN layer thickness on the wavelength uniformity of GaN based blue LEDs[J]. Chinese Journal of Luminescence, 2017, 38(9): 1198-1204. (in Chinese) doi: 10.3788/fgxb20173809.1198
[12]	ZHOU ZH Y, YANG K, HUANG Y M, et al. Recombination Process in InGaN/GaN MQW LED on Silicon with δ-Si Doped n-GaN Layer[J]. Chinese Journal of Luminescence, 2018, 39(12): 1722-1729. (in Chinese) doi: 10.3788/fgxb20183912.1722
[13]	CHARLES M, MRAD M, KANYANDEKWE J, et al. Extraction of stress and dislocation density using in-situ curvature measurements for AlGaN and GaN on silicon growth[J]. Journal of Crystal Growth, 2019, 517: 64-67. doi: 10.1016/j.jcrysgro.2019.04.014
[14]	WANG K J, WANG A Q, JI Q B, et al. Epitaxy of GaN in high aspect ratio nanoscale holes over silicon substrate[J]. Applied Physics Letters, 2017, 111(25): 252101. doi: 10.1063/1.5002529
[15]	ISHIKAWA H, ASANO K, ZHANG B, et al. Improved characteristics of GaN-based light-emitting diodes by distributed Bragg reflector grown on Si[J]. Physica Status Solidi (A), 2004, 201(12): 2653-2657.
[16]	ISHIKAWA H, JIMBO T, EGAWA T. GaInN light emitting diodes with AlInN/GaN distributed Bragg reflector on Si[J]. Physica Status Solidi C, 2008, 5(6): 2086-2088. doi: 10.1002/pssc.200778441
[17]	ZHANG B J, EGAWA T, ISHIKAWA H, et al. Thin-film InGaN multiple-quantum-well light-emitting diodes transferred from Si (111) substrate onto copper carrier by selective lift-off[J]. Applied Physics Letters, 2005, 86(7): 071113. doi: 10.1063/1.1863412
[18]	CHEN T F, WANG Y Q, XIANG P, et al. Crack-free InGaN multiple quantum wells light-emitting diodes structures transferred from Si (111) substrate onto electroplating copper submount with embedded electrodes[J]. Applied Physics Letters, 2012, 100(24): 241112. doi: 10.1063/1.4729414
[19]	LUO R H, RAO W T, CHEN T F, et al. Vertical InGaN multiple quantum wells light-emitting diodes structures transferred from Si (111) substrate onto electroplating copper submount with through-holes[J]. Japanese Journal of Applied Physics, 2012, 51(1R): 012101. doi: 10.7567/JJAP.51.012101
[20]	HUANG B B, XIONG CH B, TANG Y W, et al. Changes of stress and luminescence properties in GaN-based LED films before and after transferring the films to a flexible layer on a submount from the silicon epitaxial substrate[J]. Acta Physica Sinica, 2015, 64(17): 177804. (in Chinese) doi: 10.7498/aps.64.177804