Volume 13 Issue 4
Aug.  2020
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WANG Wei, LI Ye, CHEN Wei-jun, SONG De, WANG Xin. Influence of proximity focusing structure and electric field distribution on electron trajectory in the EBCMOS[J]. Chinese Optics, 2020, 13(4): 713-721. doi: 10.37188/CO.2020-0063
Citation: WANG Wei, LI Ye, CHEN Wei-jun, SONG De, WANG Xin. Influence of proximity focusing structure and electric field distribution on electron trajectory in the EBCMOS[J]. Chinese Optics, 2020, 13(4): 713-721. doi: 10.37188/CO.2020-0063

Influence of proximity focusing structure and electric field distribution on electron trajectory in the EBCMOS

doi: 10.37188/CO.2020-0063
Funds:  Supported by National Natural Science Foundation of China (No. 11874091); Key Scientific and Technological Project of Science and Technology Department of Jilin Province (No. 20180201034GX)
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  • In order to obtain high-resolution Electron Bombarded CMOS (EBCMOS) imaging devices, we study the effect of electric field distribution on the electron trajectory in proximity focusing EBCMOS devices. Three different electric field distributions are obtained by designing different EBCOMS structure, namely, the nonparallel, partially parallel, and parallel equipotential surfaces between the photocathode and the Back-side Bombarded CMOS (BSB-CMOS). The electron trajectories in each case are simulated according to electromagnetism theory and monte carlo simulation method. The results indicate that, when the BSB-CMOS is bombarded by photoelectrons, the scattering diameter can be reduced to 30 μm under the condition that the surface of the electron multiplying layer is covered with 30 nm ultra-thin heavily doping layer and the voltage between electrodes is maintained at 4000 V while the distance between photocathode and BSB-CMOS is 1 mm. This structure is helpful to realize electrons focusing and achieve EBCMOS with high resolution. Then, the influence of the distance and voltage between the photocathode and BSB-CMOS on scattering diameter is studied. The results indicate that the electric field strength increases with the decrease of proximity distance and the increase of the acceleration voltage. This work will provide theoretical guidance for improving the resolution characteristics of EBCMOS imaging devices.

     

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