Volume 13 Issue 4
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Chinese Optics  > 2020  >  13(4): 713-721.
WANG Wei, LI Ye, CHEN Wei-jun, SONG De, WANG Xin. Influence of proximity focusing structure and electric field distribution on electron trajectory in the EBCMOS[J]. Chinese Optics, 2020, 13(4): 713-721. doi: 10.37188/CO.2020-0063
Citation: WANG Wei, LI Ye, CHEN Wei-jun, SONG De, WANG Xin. Influence of proximity focusing structure and electric field distribution on electron trajectory in the EBCMOS[J]. Chinese Optics, 2020, 13(4): 713-721. doi: 10.37188/CO.2020-0063
shu

Influence of proximity focusing structure and electric field distribution on electron trajectory in the EBCMOS

  • 1.

    School of Science, Changchun University of Science and Technology, Changchun 130022, China

  • 2.

    Division of Development Planning and Policies & Regulations, Changchun University of Technology, Changchun 130012, China

Funds:  Supported by National Natural Science Foundation of China (No. 11874091); Key Scientific and Technological Project of Science and Technology Department of Jilin Province (No. 20180201034GX)
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    Abstract
  • In order to obtain high-resolution Electron Bombarded CMOS (EBCMOS) imaging devices, we study the effect of electric field distribution on the electron trajectory in proximity focusing EBCMOS devices. Three different electric field distributions are obtained by designing different EBCOMS structure, namely, the nonparallel, partially parallel, and parallel equipotential surfaces between the photocathode and the Back-side Bombarded CMOS (BSB-CMOS). The electron trajectories in each case are simulated according to electromagnetism theory and monte carlo simulation method. The results indicate that, when the BSB-CMOS is bombarded by photoelectrons, the scattering diameter can be reduced to 30 μm under the condition that the surface of the electron multiplying layer is covered with 30 nm ultra-thin heavily doping layer and the voltage between electrodes is maintained at 4000 V while the distance between photocathode and BSB-CMOS is 1 mm. This structure is helpful to realize electrons focusing and achieve EBCMOS with high resolution. Then, the influence of the distance and voltage between the photocathode and BSB-CMOS on scattering diameter is studied. The results indicate that the electric field strength increases with the decrease of proximity distance and the increase of the acceleration voltage. This work will provide theoretical guidance for improving the resolution characteristics of EBCMOS imaging devices.

     

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  • [1]
    金伟其, 陶禹, 石峰, 等. 微光视频器件及其技术的进展[J]. 红外与激光工程,2015,44(11):3167-3176. doi: 10.3969/j.issn.1007-2276.2015.11.001

    JIN W Q, TAO Y, SHI F, et al. Progress of low level light video technology[J]. Infrared and Laser Engineering, 2015, 44(11): 3167-3176. (in Chinese) doi: 10.3969/j.issn.1007-2276.2015.11.001
    [2]
    郭晖, 向世明, 田民强. 微光夜视技术发展动态评述[J]. 红外技术,2013,35(2):63-68.

    GUO H, XIANG SH M, TIAN M Q. A review of the development of low-light night vision technology[J]. Infrared Technology, 2013, 35(2): 63-68. (in Chinese)
    [3]
    QI L, JUST F, LEUCHS G, et al. Autonomous absolute calibration of an ICCD camera in single-photon detection regime[J]. Optics Express, 2016, 24(23): 26444-26453. doi: 10.1364/OE.24.026444
    [4]
    TORR M R, TORR D G, BAUM R, et al. Intensified-CCD focal plane detector for space applications: a second generation[J]. Applied Optics, 1986, 25(16): 2768-2777. doi: 10.1364/AO.25.002768
    [5]
    BRUGIÈRE T, MAYER F, FEREYRE P, et al. First measurement of the in-pixel electron multiplying with a standard imaging CMOS technology: Study of the EMCMOS concept[J]. Nuclear Instruments and Methods in Physics Research Section A:Accelerators,Spectrometers,Detectors and Associated Equipment, 2015, 787: 336-339. doi: 10.1016/j.nima.2015.01.065
    [6]
    ROBBINS M S, HADWEN B J. The noise performance of electron multiplying charge-coupled devices[J]. IEEE Transactions on Electron Devices, 2003, 50(5): 1227-1232. doi: 10.1109/TED.2003.813462
    [7]
    HIRVONEN L M, JIGGINS S, SERGENT N, et al. Photon counting imaging with an electron-bombarded CCD: Towards wide-field time-correlated single photon counting (TCSPC)[J]. Nuclear Instruments and Methods in Physics Research Section A:Accelerators,Spectrometers,Detectors and Associated Equipment, 2015, 787: 323-327. doi: 10.1016/j.nima.2015.01.031
    [8]
    朱敏, 田进寿, 温文龙, 等. 基于电子轰击式CCD的大动态条纹相机研究[J]. 物理学报,2015,64(9):098501. doi: 10.7498/aps.64.098501

    ZHU M, TIAN J SH, WEN W L, et al. Research on large dynamic range streak camera based on electron-bombarded CCD[J]. Acta Physica Sinica, 2015, 64(9): 098501. (in Chinese) doi: 10.7498/aps.64.098501
    [9]
    HIRVONEN L M, SUHLING K. Photon counting imaging with an electron-bombarded pixel image sensor[J]. Sensors, 2016, 16(5): 617. doi: 10.3390/s16050617
    [10]
    刘虎林, 王兴, 田进寿, 等. 高分辨紫外电子轰击互补金属氧化物半导体器件的实验研究[J]. 物理学报,2018,67(1):014209. doi: 10.7498/aps.67.20171729

    LIU H L, WANG X, TIAN J SH, et al. High resolution electron bombareded complementary metal oxide semiconductor sensor for ultraviolet detection[J]. Acta Physica Sinica, 2018, 67(1): 014209. (in Chinese) doi: 10.7498/aps.67.20171729
    [11]
    AEBI V W, COSTELLO K A, ARCUNI P W, et al.. EBAPS: Next generation, low power, digital night vision[C]. Presented at the OPTRO 2005 International Symposium, OPTRO, 2005: 1-10.
    [12]
    AEBI V W, BOYLE J J. Electron bombarded active pixel sensor: US, 6285018B1[P]. 2001-09-04.
    [13]
    BARBIER R, DEPASSE P, BAUDOT J, et al.. First Results from the development of a new generation of hybrid photon detector: EBCMOS[C]. Proceedings of the 10th Conference on Astroparticle, Particle and Space Physics, Detectors and Medical Physics Applications, World Scientific, 2008: 23-27.
    [14]
    CAJGFINGER T, DOMINJON A, BARBIER R. Single photon detection and localization accuracy with an EBCMOS camera[J]. Nuclear Instruments and Methods in Physics Research Section A:Accelerators,Spectrometers,Detectors and Associated Equipment, 2015, 787: 176-181.
    [15]
    DOMINJON A, CHABANAT E, DEPASSE P, et al.. LUSIPHER large-scale ultra-fast single photo-electron tracker[C]. 2009 IEEE Nuclear Science Symposium Conference Record (NSS/MIC), IEEE, 2009: 1527-1531.
    [16]
    宋德, 朴雪, 拜晓锋, 等. 近贴型像增强器中微通道板输入端电场模拟研究[J]. 红外与激光工程,2015,44(10):2981-2986. doi: 10.3969/j.issn.1007-2276.2015.10.019

    SONG D, PIAO X, BAI X F, et al. Simulation research of electrostatic field of MCP input in proximity image intensifier[J]. Infrared and Laser Engineering, 2015, 44(10): 2981-2986. (in Chinese) doi: 10.3969/j.issn.1007-2276.2015.10.019
    [17]
    宋德, 石峰, 李野. 基底均匀掺杂下EBAPS电荷收集效率的模拟研究[J]. 红外与激光工程,2016,45(2):0203002. doi: 10.3788/irla201645.0203002

    SONG D, SHI F, LI Y. Simulation of charge collection efficiency for EBAPS with uniformly doped substrate[J]. Infrared and Laser Engineering, 2016, 45(2): 0203002. (in Chinese) doi: 10.3788/irla201645.0203002
    [18]
    BARBIER R, CAJGFINGER T, CALABRIA P, et al. A single-photon sensitive ebCMOS camera: The LUSIPHER prototype[J]. Nuclear Instruments and Methods in Physics Research Section A:Accelerators,Spectrometers,Detectors and Associated Equipment, 2011, 648(1): 266-274.
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