Volume 14 Issue 5
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Chinese Optics  > 2021  >  14(5): 1039-1055.
HU Si-qi, TIAN Rui-juan, GAN Xue-tao. Two-dimensional material photodetector for hybrid silicon photonics[J]. Chinese Optics, 2021, 14(5): 1039-1055. doi: 10.37188/CO.2021-0003
Citation: HU Si-qi, TIAN Rui-juan, GAN Xue-tao. Two-dimensional material photodetector for hybrid silicon photonics[J]. Chinese Optics, 2021, 14(5): 1039-1055. doi: 10.37188/CO.2021-0003
shu

Two-dimensional material photodetector for hybrid silicon photonics

  • Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, MOE Key Laboratory of Material Physics and Chemistry under Extraordinary Conditions, Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi’an 710129, China

Funds:  Supported by National Key R&D Program of China (No. 2018YFA0307200); National Natural Science Foundation of China (No. 61775183); Fundamental Research Funds for the Central Universities (No. 3102017jc01001)
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  • Corresponding author: xuetaogan@nwpu.edu.cn
  • Received Date: 08 Jan 2021
  • Rev Recd Date: 02 Feb 2021
    • Available Online: 27 Mar 2021
  • Publish Date: 18 Sep 2021
    Abstract
  • Two-dimensional (2D) materials provide new development opportunities for silicon-based integrated optoelectronic devices due to their unique structure and excellent electronic and optoelectronic properties. In recent years, 2D material-based photodetectors for hybrid-integrated silicon photonics have been widely studied. Based on the basic characteristics of several 2D materials and the photodetection mechanisms, this paper reviews the research progress of silicon photonic integrated photodetectors based on 2D materials and summarizes existing device structure and performance. Finally, prospects for strategies to obtain high-performance silicon photonic integrated 2D material photodetectors and their commercial applicability are presented with considerations for large-scale 2D material integrations, device structure, and metal-semiconductor interface optimizations, as well as emerging 2D materials.

     

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