532 nm皮秒脉冲激光对单晶硅的损伤特性研究

王佳敏; 季艳慧; 梁志勇; 陈飞; 郑长彬

doi:10.37188/CO.2021-0160

Volume 15 Issue 2

Mar. 2022

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Chinese Optics > 2022 > 15(2): 242-250.

WANG Jia-min, JI Yan-hui, LIANG Zhi-yong, CHEN Fei, ZHENG Chang-bin. Damage characteristics of a 532 nm picosecond pulse laser on monocrystalline silicon[J]. Chinese Optics, 2022, 15(2): 242-250. doi: 10.37188/CO.2021-0160

Citation:

WANG Jia-min, JI Yan-hui, LIANG Zhi-yong, CHEN Fei, ZHENG Chang-bin. Damage characteristics of a 532 nm picosecond pulse laser on monocrystalline silicon[J]. Chinese Optics, 2022, 15(2): 242-250. doi: 10.37188/CO.2021-0160

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Damage characteristics of a 532 nm picosecond pulse laser on monocrystalline silicon

doi: 10.37188/CO.2021-0160

WANG Jia-min^{1, 2
,},
JI Yan-hui^{1, 2},
LIANG Zhi-yong³,
CHEN Fei¹,
ZHENG Chang-bin^{1
,
,}

1.
State Key Laboratory of Laser-Matter Interaction, Changchun Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
2.
University of Chinese Academy of Sciences, Beijing 100049, China
3.
Beijing Institute of Tracking and Telecommunications Technology, Beijing 100094, China

Funds: Supported by National Key R&D Program Funded Project (No. 2018YFE0203203); Innovative Cross Team of the Chinese Academy of Sciences (No. JCTD-2020-13); Major Innovation Project of Changchun Institute of Optics and Mechanics, Chinese Academy of Sciences (No. E10302Y3M0)

More Information

Corresponding author: zhengchangbin@ciomp.ac.cn
Received Date: 16 Aug 2021
Rev Recd Date: 24 Sep 2021
Accepted Date: 18 Nov 2021

Available Online: 18 Nov 2021

Publish Date: 21 Mar 2022

Abstract

Abstract

With the development of optoelectronic countermeasures and ultrashort pulse laser technology, the study of the interaction between ultrashort pulse laser and monocrystalline silicon has a very important theoretical and practical significance. In order to further clarify the damage mechanism of 532 nm picosecond pulsed laser on monocrystalline silicon, we have conducted an experimental study to measure the damage threshold, clarify the damage mechanism, and discuss the pulse accumulation effect at low flux. Firstly, using a laser with a wavelength of 532 nm, a pulse width of 30 ps and a metallurgical microscope based on the 1-on-1 laser damage test method, the zero damage probability threshold is determined to be 0.52 J/cm². Secondly, the damage effect of a picosecond laser irradiated on monocrystalline silicon was studied under different laser fluxes, and it was found that the damage of 532 nm picosecond laser to monocrystalline silicon is manifested as heated-effect damage and plasma impact damage. The increase in energy density can be divided into three stages according to the main damage mechanism: thermal effect (0.52~3 J/cm²), thermal ablation (3~50 J/cm²) and plasma effect (>50 J/cm²), and the damaged areas are corresponded to different growth laws with the laser energy density, respectively. Finally, an experiment for the multi-pulse cumulative effect was carried out at a low laser flux and it was found that at a laser energy density of 0.52 J/cm², the surface was irradiated continuously for 16 shots. The formation of a heat-affected zone confirms that the cumulative effect of multiple pulses can lower the laser damage threshold on monocrystalline silicon.
- picosecond pulse laser,
- monocrystalline silicon,
- damage threshold,
- cumulative effect,
- damage characteristics

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References(22)

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