Volume 15 Issue 3
May  2022
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Chinese Optics  > 2022  >  15(3): 568-591.
CHEN Wei-shuai, WANG Hao-bing, TAO Jin, Gao Dan, LV Jin-guang, QIN Yu-xin, GUO Guang-tong, LI Xiang-lan, WANG Qiang, ZHANG Jun, LIANG Jing-qiu, WANG Wei-biao. A study on the epitaxial structure and characteristics of high-efficiency blue silicon photodetectors[J]. Chinese Optics, 2022, 15(3): 568-591. doi: 10.37188/CO.2021-0188
Citation: CHEN Wei-shuai, WANG Hao-bing, TAO Jin, Gao Dan, LV Jin-guang, QIN Yu-xin, GUO Guang-tong, LI Xiang-lan, WANG Qiang, ZHANG Jun, LIANG Jing-qiu, WANG Wei-biao. A study on the epitaxial structure and characteristics of high-efficiency blue silicon photodetectors[J]. Chinese Optics, 2022, 15(3): 568-591. doi: 10.37188/CO.2021-0188
shu

A study on the epitaxial structure and characteristics of high-efficiency blue silicon photodetectors

  • 1.

    State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

  • 2.

    University of Chinese Academy of Sciences, Beijing 100049, China

  • 3.

    Collage of Science & Engineering, Jinan University, Guangzhou Key Laboratory of Visible Light Communication Engineering Technology, Guangzhou 510632, China

Funds:  Supported by National Key Research and Development Program (No. 2018YFB1801902, No. 2018YFB1801901, No. 2019YFB2006003); Science and Technology Development Program Project (No. 20190302062GX); Youth Project of National Natural Science Foundation of China (NSFC) (No. 12004139); Science and Technology Plan Program Project of Guangdong Province (No. 2016B010111003)
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  • Author Bio:

    CHEN Wei-shuai (1994—), male, from Liaocheng, Shandong province, graduated from Shandong Jianzhu University in 2018 with a Bachelor of Science degree. Now he is a PhD student of Changchun Institute of Optics, Fine Mechanic and Physics, Chinese Academy of Sciences. He is mainly engaged in the research of nanophotonics and semiconductor photodetectors. E-mail：chenws159@163.com

    WANG Hao-bing (1994—), male, born in Songyuan, Jilin, master degree, in 2020, received a master degree from Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences (now he is in University of Technology of Troyes (France) - University of Reims (France) to continue his studies). His research interests include nanophotonics and semiconductor photodetectors. E-mail: 996490955@qq.com

    Liang Jingqiu (1962—), female, born in Changchun, Jilin Province, Ph.D., researcher, doctoral supervisor, received a Ph.D. from Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences in 2003, and is currently a researcher at Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences. She is mainly engaged in micro/nano optical structure, device and system research, infrared spectroscopy/imaging spectroscopy technology and infrared optical instrument research, micro LED micro display chip and application research and visible light communication device and system research. E-mail: liangjq@ciomp.ac.cn

    Wang Wei-biao (1962—), male, born in Yangzhou, Jiangsu, Ph.D., researcher, doctoral supervisor, received a Ph.D. from Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences in 1999, and now he is a researcher at Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences. His research interests include optoelectronic materials and devices, photodetectors, LED array chip integration and applications, photonic crystals, micro-nano photonics, field emission materials and electron emission characteristics. E-mail: wangwb@ciomp.ac.cn

  • Corresponding author: liangjq@ciomp.ac.cn; wangwb@ciomp.ac.cn
  • Received Date: 01 Nov 2021
  • Rev Recd Date: 07 Dec 2021
    • Available Online: 01 Mar 2022
  • Publish Date: 20 May 2022
    Abstract
  • In order to achieve high spectral responsivity of the silicon avalanche photodiode in blue band (400−500 nm), Separated Absorption Control Multiplication (SACM) basic device structure was designed. Based on multiple physical models, the effect of the thickness on the avalanche breakdown voltage and the photocurrent gain of the device and the effect of the doping concentration of the multiplication layer on the optical responsivity were investigated. Comprehensively considering the factors of light responsivity and breakdown voltage, the results show that the device has a low breakdown voltage Vbr-apd=34.2 V when the doping concentration of the surface non-depleted layer is 1.0×1018 cm−3, and the thickness is 0.03 μm; the doping concentration of absorption layer is 1.0×1015 cm−3, the thickness is 1.3 μm, the doping concentration of field control layer is 8.0×1016 cm−3, the thickness is 0.2 μm and the doping concentration of double layer is 1.8×1016 cm−3 and the thickness is 0.5 μm. When Vapd=0.95Vbr-apd, it has higher optical responsivity in blue band, i.e. SR is 3.72~6.08 A·W−1. The above research results provide certain theoretical reference for the preparation of practical Si-APD devices with high blue light detection responsivity.

     

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