Volume 15 Issue 3
May  2022
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Chinese Optics  > 2022  >  15(3): 568-591.
CHEN Wei-shuai, WANG Hao-bing, TAO Jin, Gao Dan, LV Jin-guang, QIN Yu-xin, GUO Guang-tong, LI Xiang-lan, WANG Qiang, ZHANG Jun, LIANG Jing-qiu, WANG Wei-biao. A study on the epitaxial structure and characteristics of high-efficiency blue silicon photodetectors[J]. Chinese Optics, 2022, 15(3): 568-591. doi: 10.37188/CO.2021-0188
Citation: CHEN Wei-shuai, WANG Hao-bing, TAO Jin, Gao Dan, LV Jin-guang, QIN Yu-xin, GUO Guang-tong, LI Xiang-lan, WANG Qiang, ZHANG Jun, LIANG Jing-qiu, WANG Wei-biao. A study on the epitaxial structure and characteristics of high-efficiency blue silicon photodetectors[J]. Chinese Optics, 2022, 15(3): 568-591. doi: 10.37188/CO.2021-0188
shu

A study on the epitaxial structure and characteristics of high-efficiency blue silicon photodetectors

  • 1.

    State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

  • 2.

    University of Chinese Academy of Sciences, Beijing 100049, China

  • 3.

    Collage of Science & Engineering, Jinan University, Guangzhou Key Laboratory of Visible Light Communication Engineering Technology, Guangzhou 510632, China

Funds:  Supported by National Key Research and Development Program (No. 2018YFB1801902, No. 2018YFB1801901, No. 2019YFB2006003); Science and Technology Development Program Project (No. 20190302062GX); Youth Project of National Natural Science Foundation of China (NSFC) (No. 12004139); Science and Technology Plan Program Project of Guangdong Province (No. 2016B010111003)
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  • Author Bio:

    CHEN Wei-shuai (1994—), male, from Liaocheng, Shandong province, graduated from Shandong Jianzhu University in 2018 with a Bachelor of Science degree. Now he is a PhD student of Changchun Institute of Optics, Fine Mechanic and Physics, Chinese Academy of Sciences. He is mainly engaged in the research of nanophotonics and semiconductor photodetectors. E-mail：chenws159@163.com

    WANG Hao-bing (1994—), male, born in Songyuan, Jilin, master degree, in 2020, received a master degree from Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences (now he is in University of Technology of Troyes (France) - University of Reims (France) to continue his studies). His research interests include nanophotonics and semiconductor photodetectors. E-mail: 996490955@qq.com

    Liang Jingqiu (1962—), female, born in Changchun, Jilin Province, Ph.D., researcher, doctoral supervisor, received a Ph.D. from Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences in 2003, and is currently a researcher at Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences. She is mainly engaged in micro/nano optical structure, device and system research, infrared spectroscopy/imaging spectroscopy technology and infrared optical instrument research, micro LED micro display chip and application research and visible light communication device and system research. E-mail: liangjq@ciomp.ac.cn

    Wang Wei-biao (1962—), male, born in Yangzhou, Jiangsu, Ph.D., researcher, doctoral supervisor, received a Ph.D. from Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences in 1999, and now he is a researcher at Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences. His research interests include optoelectronic materials and devices, photodetectors, LED array chip integration and applications, photonic crystals, micro-nano photonics, field emission materials and electron emission characteristics. E-mail: wangwb@ciomp.ac.cn

  • Corresponding author: liangjq@ciomp.ac.cn; wangwb@ciomp.ac.cn
  • Received Date: 01 Nov 2021
  • Rev Recd Date: 07 Dec 2021
    • Available Online: 01 Mar 2022
  • Publish Date: 20 May 2022
    Abstract
  • In order to achieve high spectral responsivity of the silicon avalanche photodiode in blue band (400−500 nm), Separated Absorption Control Multiplication (SACM) basic device structure was designed. Based on multiple physical models, the effect of the thickness on the avalanche breakdown voltage and the photocurrent gain of the device and the effect of the doping concentration of the multiplication layer on the optical responsivity were investigated. Comprehensively considering the factors of light responsivity and breakdown voltage, the results show that the device has a low breakdown voltage Vbr-apd=34.2 V when the doping concentration of the surface non-depleted layer is 1.0×1018 cm−3, and the thickness is 0.03 μm; the doping concentration of absorption layer is 1.0×1015 cm−3, the thickness is 1.3 μm, the doping concentration of field control layer is 8.0×1016 cm−3, the thickness is 0.2 μm and the doping concentration of double layer is 1.8×1016 cm−3 and the thickness is 0.5 μm. When Vapd=0.95Vbr-apd, it has higher optical responsivity in blue band, i.e. SR is 3.72~6.08 A·W−1. The above research results provide certain theoretical reference for the preparation of practical Si-APD devices with high blue light detection responsivity.

     

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    • References(40)
  • [1]
    DENG J ZH, CHENG X H. Visible light vehicle lamp signal transmission control device[J]. Optics and Precision Engineering, 2020, 28(12): 2710-2718. (in Chinese) doi: 10.37188/OPE.20202812.2710
    [2]
    DONG B, TONG SH F, ZHANG P, et al. Design of a 20 m underwater wireless optical communication system based on blue LED[J]. Chinese Optics, 2021, 14(6): 1451-1458. (in Chinese) doi: 10.37188/CO.2020-0190
    [3]
    LIU Y, CAI X P, LIN L, et al. Research on the fusion technology of LED visible optical communication network with Ethernet[J]. Optical Communication Technology, 2019, 43(1): 1-4. (in Chinese)
    [4]
    XU X Y, YUE D W. Orthogonal frequency division multiplexing modulation techniques in visible light communication[J]. Chinese Optics, 2021, 14(3): 516-527. (in Chinese) doi: 10.37188/CO.2020-0051
    [5]
    ZHOU ZH, MIAO W N, LI Y, et al. Influence mechanism of GaN-LED's PN junction area on modulation bandwidth in visible light communication[J]. Optics and Precision Engineering, 2020, 28(7): 1494-1499. (in Chinese) doi: 10.37188/OPE.20202807.1494
    [6]
    ZHOU Q CH, BAI Z L, LU L, et al. Remote phosphor technology for white LED applications: advances and prospects[J]. Chinese Optics, 2015, 8(3): 313-328. (in Chinese) doi: 10.3788/co.20150803.0313
    [7]
    CHEN X B, MIN CH Y. Wireless communication that we can see——visible light communication[J]. Physics, 2020, 49(10): 688-696. (in Chinese) doi: 10.7693/wl20201005
    [8]
    GAO X M. Study on silicon based nitride homologous optoelectronic integrated chip for visible light communication[D]. Nanjing: Nanjing University of Posts and Telecommunications, 2018. (in Chinese)
    [9]
    ZIMMERMANN R, BRAUN F, ACHTNICH T, et al. Silicon photomultipliers for improved detection of low light levels in miniature near-infrared spectroscopy instruments[J]. Biomedical Optics Express, 2013, 4(5): 659-666. doi: 10.1364/BOE.4.000659
    [10]
    WEI J T. The structure design and research of new type APD based on silicon and germanium[D]. Harbin: Harbin Engineering University, 2016. (in Chinese)
    [11]
    ZHU X X, GE Y, LI J J, et al. Research progress of quantum dot enhanced silicon-based photodetectors[J]. Chinese Optics, 2020, 13(1): 62-74. (in Chinese) doi: 10.3788/co.20201301.0062
    [12]
    WANG Y M, SHU H W, HAN X Y. High-precision silicon-based integrated optical temperature sensor[J]. Chinese Optics, 2021, 14(6): 1355-1361. (in Chinese) doi: 10.37188/CO.2021-0054
    [13]
    MOLL J L, VAN OVERSTRAETEN R. Charge multiplication in silicon p-n junctions[J]. Solid-State Electronics, 1963, 6(2): 147-157. doi: 10.1016/0038-1101(63)90009-1
    [14]
    PEPIN C M, DAUTET H, BERGERON M, et al.. New UV-enhanced, ultra-low noise silicon avalanche photodiode for radiation detection and medical imaging[C]. IEEE Nuclear Science Symposuim & Medical Imaging Conference, IEEE, 2010: 1740-1746.
    [15]
    OTHMAN M A, YASIN N Y M, ARSHAD T S M, et al.. Variable intrinsic region in CMOS PIN photodiode for I–V characteristic analysis[C]. Proceedings of the 1st International Conference on Communication and Computer Engineering, Springer, 2015: 95-101.
    [16]
    WANG X D. Optimization of the enhancement of the Si-based APD for near-ultraviolet detection through structural design[D]. Harbin: Harbin Institute of Technology, 2015. (in Chinese)
    [17]
    HUO L ZH, TAN H SH, HE R, et al. Research of blue-violet enhanced silicon photomultiplier[J]. Laser &Optoelectronics Progress, 2015, 52(11): 110401. (in Chinese)
    [18]
    LU H H. Simulation study on silicon-based blue-light enhanced APD detector for visible light communication[D]. Guangzhou: Jinan University, 2019. (in Chinese)
    [19]
    SCHINKE C, PEEST P C, SCHMIDT J, et al. Uncertainty analysis for the coefficient of band-to-band absorption of crystalline silicon[J]. AIP Advances, 2015, 5(6): 067168. doi: 10.1063/1.4923379
    [20]
    CHEN F. The enhancement of the APD for Blu-Ray detection in VLC[D]. Changchun: Changchun University of Science and Technology, 2018. (in Chinese)
    [21]
    WANG H B. Research on enhancement in blue-light properties of silicon based avalanche photodiode[D]. Beijing: University of Chinese Academy of Sciences (Changchun Institute of Optics, Precision Machinery and Physics, Chinese Academy of Sciences), 2020. (in Chinese)
    [22]
    SHI Y L, ZHU H X, YANG X Y, et al. InP-based free running mode single photon avalanche photodiode[J]. Infrared and Laser Engineering, 2020, 49(1): 0103005. (in Chinese)
    [23]
    LIU E K, ZHU D SH, LUO J SH. Physics of Semiconductors[M]. 7th ed. Beijing: Publishing House of Electronics Industry, 2017: 66-67. (in Chinese)
    [24]
    CHYNOWETH A G. Chapter 4 charge multiplication phenomena[J]. Semiconductors and Semimetals, 1968, 4: 263-325.
    [25]
    YANG M. The research of silicon avalanche photodiode single photon detector on space quantum communication[D]. Hefei: University of Science and Technology of China, 2019. (in Chinese)
    [26]
    LI Y. Theoretical and experimental study on avalanche photodiodes and optimization design[D]. Wuhan: Huazhong University of Science and Technology, 2017. (in Chinese)
    [27]
    SZE S M, NG K K. Physics of Semiconductor Devices[M]. GENG L, ZHANG R ZH, trans. 3rd ed. Xi'an: Xi'an Jiaotong University Press, 2008. (in Chinese)
    [28]
    WOODS M H, JOHNSON W C, LAMPERT M A. Use of a Schottky barrier to measure impact ionization coefficients in semiconductors[J]. Solid-State Electronics, 1973, 16(3): 381-394. doi: 10.1016/0038-1101(73)90013-0
    [29]
    FOSSUM J G, MERTENS R P, LEE D S, et al. Carrier recombination and lifetime in highly doped silicon[J]. Solid-State Electronics, 1983, 26(6): 569-576. doi: 10.1016/0038-1101(83)90173-9
    [30]
    OLDHAM W G, SAMUELSON R R, ANTOGNETTI P. Triggering phenomena in avalanche diodes[J]. IEEE Transactions on Electron Devices, 1972, 19(9): 1056-1060. doi: 10.1109/T-ED.1972.17544
    [31]
    GAO D, ZHANG J, WANG F, et al. Design and simulation of ultra-thin and high-efficiency silicon-based trichromatic PIN photodiode arrays for visible light communication[J]. Optics Communications, 2020, 475: 126296. doi: 10.1016/j.optcom.2020.126296
    [32]
    VAN OVERSTRAETEN R, DE MAN H. Measurement of the ionization rates in diffused silicon p-n junctions[J]. Solid-State Electronics, 1970, 13(5): 583-608. doi: 10.1016/0038-1101(70)90139-5
    [33]
    SELBERHERR S. Analysis and Simulation of Semiconductor Devices[M]. Vienna: Springer, 1984.
    [34]
    HALL R N. Electron-hole recombination in germanium[J]. Physical Review, 1952, 87(2): 387.
    [35]
    SHOCKLEY W, READ JR W T. Statistics of the recombinations of holes and electrons[J]. Physical Review, 1952, 87(5): 835-842. doi: 10.1103/PhysRev.87.835
    [36]
    ARORA N D, HAUSER J R, ROULSTON D J. Electron and hole mobilities in silicon as a function of concentration and temperature[J]. IEEE Transactions on Electron Devices, 1982, 29(2): 292-295. doi: 10.1109/T-ED.1982.20698
    [37]
    CAUGHEY D M, THOMAS R E. Carrier mobilities in silicon empirically related to doping and field[J]. Proceedings of the IEEE, 1967, 55(12): 2192-2193. doi: 10.1109/PROC.1967.6123
    [38]
    MASETTI G, SEVERI M, SOLMI S. Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon[J]. IEEE Transactions on Electron Devices, 1983, 30(7): 764-769. doi: 10.1109/T-ED.1983.21207
    [39]
    FORREST S. Performance of InxGa1-xAsyP1-yphotodiodes with dark current limited by diffusion, generation recombination, and tunneling[J]. IEEE Journal of Quantum Electronics, 1981, 17(2): 217-226. doi: 10.1109/JQE.1981.1071060
    [40]
    GU H Q. The study of avalanche gain and structural parameter optimization in Si based micro-pixel APD[D]. Harbin: Harbin Institute of Technology, 2012. (in Chinese)
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