| Citation: | YUE Yu-xin, ZOU Yong-gang, FAN Jie, FU Xi-yao, ZHANG Nai-yu, SONG Ying-min, HUANG Zhuo-er, MA Xiao-hui. 785 nm semiconductor laser with shallow etched gratings[J]. Chinese Optics. doi: 10.37188/CO.EN-2024-0019
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A new type of 785 nm semiconductor laser device has been proposed. The thin cladding and mode expansion layer structure incorporated into the epitaxy on the p-side significantly impacts the regulation of grating etching depth. Thinning of the P-side waveguide layer makes the light field bias to the N-side cladding layer. By coordinating the confinement effect of the cladding layer, the light confinement factor on the p-side is regulated. On the other hand, the introduction of a mode expansion layer facilitates the expansion of the mode profile on the P side cladding layer. Both these factors contribute positively to reducing the grating etching depth. Compared to the reported epitaxial structures of symmetric waveguides, the new structure significantly reduces the etching depth of the grating while ensuring adequate reflection intensity and maintaining resonance. Moreover, to improve the output performance of the device, a new epitaxial structure has been optimized. Based on the traditional epitaxial structure, an energy release layer and an electron blocking layer are added to improve the electronic recombination efficiency. This improved structure has an output performance comparable to that of a symmetric waveguide, despite being able to have a smaller gain area.
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