Application of ICP etching in fabrication of polymer optical waveguide

[1] 樊中朝,余金中,陈少武. ICP刻蚀技术及其在光电子器件制作中的应用[J]. 微细加工技术,2003,6(2):21-27. FAN ZH CH,YU J ZH,CHEN SH W. Inductively coupled plasma etching technology and its application in optoelectronic devices fabrication[J]. Microfabrication Technology,2003,6(2):21-27.(in Chinese) [2] 李伟东,张建辉,吴学忠,等. ICP刻蚀技术在MEMS器件制作中的应用[J]. 微纳电子技术,2005,10(1):473-476. LI W D,ZHANG J H,WU X ZH,et al.. Application of ICP etching technology in MEMS field[J]. Micronanoelectronic Technology,2005,10(1):473-476.( in Chinese) [3] 郑志霞,冯勇建,张春权. ICP刻蚀技术研究[J]. 厦门大学学报 (自然科学版),2004,43(8):365-368. ZHENG ZH X,FENG Y J,ZHANG CH Q. Etching technique of inductive couple plasmas[J]. J. Xiamen University(Natural Science),2004,43(8):365-368.(in Chinese) [4] FU L,MIAO J M,LI X X. Study of deep silicon etching for micro-gyroscope fabrication[J]. Appl. Surface Sci.,2001,177(1-2):78-84. [5] ILIESCU C,MIAO J. One-mask process for silicon accelerometers on pyrex glass utilising notching effect in inductively coupled plasma DRIE[J]. Electron. Lett.,2003,39(8):658-659. [6] 陈长鸣. 硅基聚合物平面光波导器件的基础研究 .长春:吉林大学,2010:57-58. CHEN CH M. The basic research on polymer/Si planar optical waveguide devices . Changchun:Jilin University,2010:57-58.(in Chinese) [7] 姚刚,石文兰. ICP技术在化合物半导体器件制备中的应用[J]. 半导体技术,2007,32(6):474-477. YAO G,SHI W L. Application of ICP etching in the fabrication of compound semiconductor device[J]. Semiconductor Technology,2007,32(6):474-477.(in Chinese) [8] 张鉴,黄庆安. ICP刻蚀技术与模型[J]. 微纳电子技术,2005(6):288-296. ZHANG J,HUANG Q A. Technology and models of ICP etching[J]. Micronanoelectronic Technology,2005(6):288-296.(in Chinese) [9] 刘洪兴,张巍,巩岩. 光栅参数测量技术研究进展[J]. 中国光学,2011,4(2):103-110. LIU H X,ZHANG W,GONG Y. Progress in grating parameter measurement technology[J]. Chinese Optics,2011,4(2):103-110.(in Chinese) [10] KIM B,LEE B T,HAN J G. Surface roughness of silicon oxynitride etching in C₂F₆ inductively coupled plasma[J]. Solid-State Electronics,2007,51(3):366-370. [11] 吕垚,李宝霞,万里兮. 硅深槽ICP刻蚀中刻蚀条件对形貌的影响[J]. 微电子学,2009,39(5):729-732. LV Y,LI B X,WAN L X. Effects of technical parameters on etching rate and selectivity of Si deep trench using ICP etching[J]. Microelectronics,2009,39(5):729-732.(in Chinese) [12] 樊中朝,余金中,陈少武,等. ICP刻蚀参数对SOI脊形波导侧壁粗糙度的影响[J]. 半导体学报,2004,25(11):1500-1504. FAN ZH CH,YU J ZH,CHEN SH W,et al. Influence of etching parameters on sidewall roughness of silicon based waveguide etched by inductively coupled plasma[J]. Chinese J. Semiconductors,2004,25(11):1500-1504.(in Chinese) [13] HAN K,KIM J,JANG W H. Evaluation of halogenated polyimide etching for optical waveguide fabrication by using inductively coupled plasma[J]. J. Appl. Polymer Sci.,2001,79(1):176-182.