Volume 7 Issue 2
Mar.  2014
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ZHOU Zheng, LI Jin-hua, FANG Fang, CHU Xue-ying, FANG Xuan, WEI Zhi-peng, WANG Xiao-hua. Zn2GeO4 nanowires prepared by chemical vapor deposition and its luminescence properties[J]. Chinese Optics, 2014, 7(2): 281-286. doi: 10.3788/CO.20140702.0281
Citation: ZHOU Zheng, LI Jin-hua, FANG Fang, CHU Xue-ying, FANG Xuan, WEI Zhi-peng, WANG Xiao-hua. Zn2GeO4 nanowires prepared by chemical vapor deposition and its luminescence properties[J]. Chinese Optics, 2014, 7(2): 281-286. doi: 10.3788/CO.20140702.0281

Zn2GeO4 nanowires prepared by chemical vapor deposition and its luminescence properties

  • Received Date: 16 Oct 2013
  • Rev Recd Date: 19 Feb 2014
  • Publish Date: 25 Mar 2014
  • Ternary Zn2GeO4 nanowires were prepared by VLS law and the Chemical Vapor Deposition(CVD) method on 1 cm1 cm silicon wafer sputtered by metal Au catalyst. Zn2GeO4 structure was obtained under the condition that the mass ratio of zinc source and germanium source was 8:1wt% as the X-ray diffraction(XRD) shown. The Scanning Electron Microscopy(SEM) result showed that the diameter of the nanowires was 100 nm and the length was approximately 10-11 m. The photoluminescence(PL) spectra showed two emission peaks at 432 nm and 480 nm, respectively. Finally, the growth mechanism of the Zn2GeO4 nanowires was analyzed.

     

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