Citation: | ZHOU Zheng, LI Jin-hua, FANG Fang, CHU Xue-ying, FANG Xuan, WEI Zhi-peng, WANG Xiao-hua. Zn2GeO4 nanowires prepared by chemical vapor deposition and its luminescence properties[J]. Chinese Optics, 2014, 7(2): 281-286. doi: 10.3788/CO.20140702.0281 |
[1] PAN Z W, DAI Z R, WANG Z L. Nanobelts of semiconducting oxides[J]. Science, 2001, 291(5510):1947-1949.
[2] 孙晓绮, 孟庆华, 孟庆云. 铕掺杂氧化锌纳米棒阵列材料的制备及光学性能研究[J]. 发光学报, 2013, 34(5):573-578. SUN X Q, MENG Q H, MENG Q Y. Fabrication and optical properties of Eu-doped ZnO nanorod arrays[J]. Chinese J. Luminescence, 2013, 34(5):573-578.(in Chinese)
[3] HU J, BANDO Y, ZHAN J, et al.. Self-Assembly of SiO2 nanowires and Si microwires into hierarchical heterostructures on a large scale[J]. Adv. Materials, 2005, 17:971-975.
[4] WU X C, SONG W H, ZHAO B, et al.. Preparation and photoluminescence properties of crystalline GeO2 nanowires[J]. Chem. Phys. Lett., 2001, 349:210-214.
[5] GUDIKSEN M S, LAUHON L J, WANG J, et al.. Growth of nanowire superlattice structures for nanoscale photonics and electronics[J]. Nature, 2002, 415:617-620.
[6] 曹萍, 白越. N掺杂纳米ZnO的制备及光催化性能[J]. 发光学报, 2013, 34(10):1328-1331. CAO P, BAI Y. Preparation and photocatalytic properties of N-doped nano-ZnO[J]. Chinese J. Luminescence, 2013, 34(10):1328-1331.(in Chinese)
[7] 潘跃武. 氧化锌纳米结构的制备及发光性质研究[J]. 发光学报, 2013, 34(8):994-999. PAN Y W. Synthesis and photoluminescence properties of zinc oxide nanostructures[J]. Chinese J. Luminescence, 2013, 34(8):994-999.(in Chinese)
[8] WANG J X, XIE S S, YUAN H J, et al.. Synthesis, structure, and photoluminescence of Zn2SnO4 single-crystal nanobelts and nanorings[J]. Solid State Commun., 2004, 131:435-440.
[9] YU ZH, CHEN H, LI ZH W, et al.. Synthesis of ZnGa2O4 nanowires with β-Ga2O3 templates and its photoluminescence performance[J]. Materials Lett., 2009, 63:37-40.
[10] 韩松, 宋博, 刘磊, 等. CdWO4: Yb3+, Ho3+纳米晶的制备及发光性能研究[J]. 发光学报, 2013, 34(9):1183-1187. HAN S, SONG B, LIU L, et al.. Preparation and luminescence properties of CdWO4: Yb3+, Ho3+ nano-crystals[J]. Chinese J. Luminescence, 2013, 34(9):1183-1187.(in Chinese)
[11] PITZSCHKE D, BENSCH W. In2Ge6O15(en)2:a In Ge compound composed of germanate layers linked by pillars of In2O6N4 double octahedra[J]. Angewandte Chemie International, 2003, 42:4389-4391.
[12] MINAMI T, MIYATA T, SAKAGAMI Y. TFEL devices using oxide thin films without vacuum process[J]. Surface and Coatings Technology, 1998, 108-109:594-598.
[13] LEWIS J S, HOLLOWAY P H. Sputter deposition and electroluminescence of Zn2GeO4: Mn[J]. J. Electrochem. Soc., 2000, 147:3148-3150.
[14] BENDER J P, WAGER J F, J KISSICK, et al.. Zn2GeO4: Mn alternating-current thin-film electroluminescent devices[J]. J. Luminescence, 2002, 99:311-324.
[15] GU ZH J, LIU F, LI X F, et al.. Luminescent Zn2GeO4 nanorod arrays and nanowires[J]. Phys. Chem., 2013, 15:7488-7493.
[16] 杜鸿延, 魏志鹏, 孙丽娟, 等. 与掺杂浓度相关的ZnS: Mn纳米粒子的发光性质[J]. 中国光学, 2013, 6(1):111-116. DU H Y, WEI ZH P, SUN L J, et al.. Luminescent properties of ZnS: Mn nanoparticles dependent on doping concentration[J]. Chinese Optics, 2013, 6(1):111-116.(in Chinese)
[17] 李刚, 李丽华, 顾永军, 等.ZnS: Mn纳米晶的制备及其发光性能研究[J]. 发光学报, 2013, 34(7):861-865. LI G, LI L H, GU Y J, et al. Preparation and luminescence properties of ZnS: Mn nanocrystalline[J]. Chinese J. Luminescence, 2013, 34(7):861-865.(in Chinese)
[18] LIU Z, JING X, WANG L. Luminescence of native defects in Zn2GeO4[J]. J. Electrochem. Soc., 2007, 6:H500-H506.
[19] YAN CH Y, SINGH N D, LEE P S. Wide-bandgap Zn2GeO4 nanowire networks as efficient ultraviolet photodetectors with fast response and recovery time[J]. Appl. Physics Lett., 2010, 96:108-110.
[20] PEI L Z, YANG Y, YANG L J, et al.. Large-scale synthesis and the roles of growth conditions on the formation of Zn2GeO4 nanorods[J]. Solid State Communications, 2011, 151:14-15.
[21] KIM H W, NA H G, YANG J CH, et al.. Temperature-controlled synthesis of Zn2GeO4 nanowires in a vapor liquid solid mode and their photoluminescence properties[J]. Chem. Eng. J., 2011, 171:1439-1445.
[22] JUMIDALI M M, SULIEMAN K M, HASHIM M R. Structural, optical and electrical properties of ZnO/Zn2GeO4 porous-like thin film and wires[J]. Appl. Surface Sci., 2011, 257:4890-4895.
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