Volume 11 Issue 4
Jul.  2018
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Chinese Optics  > 2018  >  11(4): 590-603.
QIU Bo-cang, MARTIN Hai HU, WANG Wei-min, LIU Wen-bin, BAI Xue. Design and fabrication of 12 W high power and high reliability 915 nm semiconductor lasers[J]. Chinese Optics, 2018, 11(4): 590-603. doi: 10.3788/CO.20181104.0590
Citation: QIU Bo-cang, MARTIN Hai HU, WANG Wei-min, LIU Wen-bin, BAI Xue. Design and fabrication of 12 W high power and high reliability 915 nm semiconductor lasers[J]. Chinese Optics, 2018, 11(4): 590-603. doi: 10.3788/CO.20181104.0590
shu

Design and fabrication of 12 W high power and high reliability 915 nm semiconductor lasers

  • 1.

    Research Institute of Tsinghua University in Shenzhen, Shenzhen 518057, China

  • 2.

    Shenzhen Raybow Optoelectronics Corp, Shenzhen 518055, China

  • 3.

    Guangdong Provincial Key Laboratory of Optomechatronics, Shenzhen 518057, China

Funds:

National High Technology Research and Development Program of China 2015AA016901

Innovative R & D Team Leadership of Guangdong Province Program 2011D040

Shenzhen City Peacock Program KQTD201106

More Information
  • Author Bio:

    QIU Bo-cang(1962—) received his bachelor's degree in engineering from Xi′an Jiaotong University in 1983, a master′s degree in engineering from Beijing Institute of Technology in 1986, and a doctor's degree from Glasgow University in England in 1998.He is currently a design expert for the Institute of High-end Semiconductor Laser Research of Shenzhen Tsinghua University and the design director of Shenzhen Raybow Optoelectronics Co., Ltd.He is mainly engaged in the research of semiconductor lasers.Dr.Qiu specializes in semiconductor optoelectronic devices, especially in semiconductor laser processes and designs.He has published 110 academic papers in the industry's top journals and academic conferences and applied for 14 invention patents. E-mail:qiubocang@raybowlaser.com

    BAI Xue(1987—) received her bachelor's degree from Henan University of Technology in 2009 and a master′s degree from Henan University of Technology in 2012.She is currently a project engineer at Shenzhen Raybow Optoelectronics Co., Ltd.and is mainly engaged in the research of semiconductor lasers.E-mail:baixue@raybowlaser.com

  • Corresponding author: QIU Bo-cang, E-mail:qiubocang@raybowlaser.com
  • Received Date: 25 Dec 2017
  • Rev Recd Date: 12 Feb 2018
  • Publish Date: 01 Aug 2018
    Abstract
  • In this paper, a high efficiency and high reliability 915 nm semiconductor laser is designed and fabricated, which is a key component of the fiber lasers. In order to maximize the electro-optic conversion efficiency of the device, a double asymmetric large-cavity waveguide structure is adopted in the design, and the quantum well structure, waveguide structure, doping, and device structure are systematically optimized. Device simulations show that the device's maximum electro-optical conversion efficiency reaches 67% at an ambient temperature of 25℃. The material is grown by Metal Organic Chemical Vapor Deposition(MOCVD), and a laser chip having a light emitting region width of 95 μm and a cavity length of 4.8 mm is prepared. Tests show that the efficiency of the packaged device and other parameter indices have reached the advanced level of similar devices in the world. In the case that the threshold current is 1 A at room temperature, the slope efficiency is 1.18 W/A, the maximum electro-optic conversion efficiency is 66.5%, the output power is 12 W, and the electro-optical conversion efficiency reaches 64.3%. It can be seen that the test results are in good agreement with that of the device theory simulation. After approximately 6 000 hours of long-life accelerated testing, the device power does not attenuate, indicating that the produced high-power 915 nm laser chip has very high reliability.

     

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