掺碲硒化镓晶体的光学性能

古新安; 朱韦臻; 罗志伟; ANDREEV Y M; LANSKII G V; SHAIDUKO A V; IZAAK T I; SVETLICHNYI V A; VAYTULEVICH E A; ZUEV V V

Volume 4 Issue 6

Dec. 2011

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Article Contents

Chinese Optics > 2011 > 4(6): 660-666.

KU Shin-an, CHU Wei-chen, LUO Chih-wei, ANDREEV Y M, LANSKII G V, SHAIDUKO A V, IZAAK T I, SVETLICHNYI V A, VAYTULEVICH E A, ZUEV V V. Optical properties of Te-doped GaSe crystal[J]. Chinese Optics, 2011, 4(6): 660-666.

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Optical properties of Te-doped GaSe crystal

1.
National Chiao Tung University, Hsinchu 30010, Taiwan, China;
2.
Institute of Monitoring of Climatic and Ecological System SB RAS, Tomsk 634055, Russia;
3.
Siberian Physics-technical Institute of TSU, Tomsk 634050, Russia;
4.
Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

Funds:

supported by RFBR Project(No.10-02-01452-a), Presidium SB RAS under the Project VII.63.3.1 of VII.63.3 Prog. and Join Proj. between Presidium SB RAS and Presidium NAS, Belarus No.10 of 2010.

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Author Bio:
KU Shin-an(1985-), Post-graduate student, National Chiao Tung University, Taiwan, China. His research interests include nonlinear optics and THz spectroscopy. E-mail:ksa7471@hotmail.com CHU Wei-chen(1989-), Master Student, National Chiao Tung University, Taiwan, China. Her research interests include nonlinear optics and THz spectroscopy. E-mail:s.daffodil@hotmail.com

KU Shin-an(1985-), Post-graduate student, National Chiao Tung University, Taiwan, China. His research interests include nonlinear optics and THz spectroscopy. E-mail:ksa7471@hotmail.com CHU Wei-chen(1989-), Master Student, National Chiao Tung University, Taiwan, China. Her research interests include nonlinear optics and THz spectroscopy. E-mail:s.daffodil@hotmail.com
Received Date: 21 Sep 2011
Rev Recd Date: 23 Nov 2011
Publish Date: 25 Dec 2011

Abstract

Abstract

-GaSe crystals are grown with the stoichiometric GaSe of 0.05%, 0.1%, 0.5%, 1% and 2%(mass percent) Te and are characterized by GaSe∶Te(0.01%, 0.07%, 0.38%, 0.67% and 2.07%(mass percent)) crystals. The transformation of the rigid layer phonon modes with doping is studied for the first time. The absorption peak of the rigid mode E'(2) centered at ~0.59 THz is rising up in the intensity till reaching a maximal value on the first stage of the doping concentration less than 0.38%(mass percent). This process correlates well with the improvement in the optical property. Further doping is resulting in the decrease of the intensity till vanishing the E'(2) absorption peak at 1%(mass percent) Te. Simultaneously with the E'(2) absorption peak decreasing, the absorption peak of the rigid mode E'(2) centered at 1.78 THz is rising up in the intensity. The two processes correlate well with the degradation in the optical quality of GaSe∶Te crystal. The doping level that results in the highest intensity of the absorption peak of the rigid layer mode E'(2) is proposed as a criterion in the identification of the optimal Te-doping in GaSe crystal that is confirmed by THz generation via optical rectification.
- Te crystal,
- crystal growth,
- optical property,
- THz,

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References(1)

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