Study on the effect of 1064 nm/532 nm picosecond laser on visible light CCD interference and damage
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摘要:
随着短脉冲激光技术的快速发展，CCD图像传感器受到的潜在威胁呈现区别于传统连续/长脉冲激光的新特征。为了探究不同波长短脉冲激光致CCD图像传感器干扰损伤的影响机制和作用原理，选用波长为
1064 nm、532 nm，脉宽为30 ps，重复频率为1 Hz的皮秒激光对可见光CCD进行干扰损伤实验研究，通过光学显微镜、图像传感器自身成像观察CCD干扰损伤不同阶段辐照效能，分析了短脉冲激光对CCD干扰损伤的机理，对比了两种波长激光辐照CCD不同阶段的成像图像、微观形貌以及阈值。结果表明，对可见光CCD，波长532 nm激光比波长1064 nm微透镜层贯穿能力更强，波长532 nm激光比波长1064 nm激光干扰阈值低1−2个数量级，点损和线损阈值低2个数量级。Abstract:With the rapid development of short-pulse laser technology, the potential threats to CCD image sensors exhibit new characteristics distinct from those induced by traditional continuous-wave or long-pulse laser. To investigate the mechanisms and principles of interference and damage caused by short-pulse laser of different wavelengths, picosecond laser with wavelengths of
1064 nm and 532 nm, a pulse width of 30 ps, and a repetition rate of 1 Hz were employed to irradiate visible-light CCD in interference and damage experiments. The irradiation effects at different interference and damage stages of the CCD were characterized using optical microscopy and the its own imaging response. The mechanisms of short-pulse laser-induced interference and damage were analyzed, and the imaging response, microscopic morphology, and thresholds at various stages were compared for the two wavelengths. The results indicate that, for visible-light CCD, the 532 nm laser possesses stronger penetration capability through the microlens layer than the1064 nm laser, and its interference threshold is 1–2 orders of magnitude lower. The point and line-damage thresholds induced by the 532 nm laser are approximately 2 orders of magnitude lower than those induced by the1064 nm laser.-
Key words:
- short-pulse laser /
- CCD /
- irradiation effect /
- interference and damage
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图 3 激光辐照可见光CCD图像传感器实验原理图
Figure 3. Schematic diagram of the laser irradiation Experiment on a visible-light CCD image sensor
图 6 波长
1064 nm激光对CCD干扰实验结果Figure 6. Results of
1064 nm laser interference experiment on CCD
图 7 波长532 nm激光对CCD干扰实验结果
Figure 7. Results of 532 nm laser interference experiment on CCD
图 9 单晶硅吸收
1064 nm/532 nm激光不同深度光强分布Figure 9. Single crystal silicon absorption intensity distribution at different depths for
1064 nm/532 nm
图 10 波长
1064 nm点损成像、点损后成像及微透镜形貌Figure 10.
1064 nm point damage image, post-point damage image and microlens morphology
图 11 波长532 nm点损成像、点损后成像及微透镜形貌
Figure 11. 532 nm point damage image, post-point damage image and microlens morphology
图 14 双波长线损处微透镜形貌
Figure 14. Microlens morphology characterization at dual-wavelength line-damage sites
表 1 双波长30 ps脉冲激光辐照CCD干扰阈值对比(单位：J/cm2)
Table 1. Comparison of interference thresholds of CCD under dual-wavelength 30 ps pulse laser irradiation (Unit: J/cm2)
波长 初始饱和 串扰 满靶面饱和 1064 nm1.91×10−4 3.34×10−3 6.00×10−2 532 nm 4.05×10−6 9.10×10−5 3.14×10−4 
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表 2 双波长30 ps脉冲激光辐照CCD不同损伤阶段阈值对比(单位：J/cm2)
Table 2. Comparison study of damage thresholds at different stages in CCD under dual-wavelength 30 ps pulsed laser irradiation (Unit: J/cm2)
波长（nm） 点损伤阈值 线损伤阈值 1064 6.86×10−2 2.85×10−1 532 5.78×10−4 3.42×10−3
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