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摘要:
光谱成像、片上通信及多功能集成光子学的快速发展，正推动光学系统向小型化与高度集成化方向演进，并对紧凑平台上多波段光束的独立空间调控提出了迫切需求。然而，传统多波段调控方案通常依赖多片器件或复杂光路，结构笨重且易产生跨波段串扰，限制了系统的集成度与可扩展性。针对这一挑战，本文提出了一种基于双波段双梯度相位协同构建的单层全介质超表面设计策略，可在单层结构中实现不同波段波前调控功能的方向解耦。为验证该策略的有效性，我们选取硅（Si）与二氧化硅（SiO2）构建超表面，并以800 nm与
1150 nm两个波段为示例验证策略。所构建的超表面单元在各自工作波段实现完整的0−2π高效相位覆盖，通过梯度相位实现各自波段的定向偏折，并将两类单元以旋转交错90°的方式排列形成复合周期结构，使双波段相位分布在同一平面内共存且互不干扰。结果表明，垂直入射条件下，器件将800 nm波段的透射光束相对于入射法线在一个横向方向偏折约14°，而将1150 nm波段的透射光束则在与其正交的另一横向方向偏折约24°，从而实现空间通道的清晰分离与独立调控。同时，器件保持偏振无关性与稳定波前控制，验证了双波段空间正交调控性能的可靠性。该设计策略为实现高集成度、多波段且具空间正交调控能力的片上光子器件提供了一种紧凑、高效且具有普适性的技术路径，在光谱成像、双波段通信及集成光子学系统中具有广泛的应用潜力。Abstract:With the rapid development of spectral imaging, on-chip communication, and multifunctional integrated photonics, modern optical systems require multi-band beams to be independently controlled in three dimensions within compact platforms. However, conventional multi-band solutions typically rely on multiple optical components or complex folded beam paths, resulting in bulky structures and inter-band crosstalk that limit device integration and scalability.To address this challenge, we propose a dual-band dual-phase-gradient design strategy for independent wavefront control. This approach enables mutually independent phase-gradient units for different wavelengths to coexist on a single-layer metasurface, achieving spatially independent beam deflection. To validate the strategy, a Si/SiO2 all-dielectric metasurface is designed for the 800 nm and
1150 nm bands.The meta-units provide full 0−2π phase coverage at their respective bands. By imposing phase gradients and arranging the two types of units in a 90° rotationally interleaved configuration, a composite periodic structure is formed in which dual-band phase profiles coexist without interference. Simulations show that under normal incidence, the device deflects the 800 nm and1150 nm transmitted beams by approximately 14° and 24° along orthogonal transverse directions, achieving clear spatial separation and independent beam manipulation. The device also exhibits polarization-insensitive and stable wavefront control, confirming the reliability of its dual-band orthogonal operation.This design strategy provides a compact, efficient, and generalizable pathway toward highly integrated multi-band on-chip photonic devices, with broad potential applications in spectral imaging, dual-band communication, and integrated photonic systems. -
图 1 超表面的工作原理示意图。单层全介质超表面在两个工作波长
$ {\lambda }_{1} $ 、$ {\lambda }_{2} $ 下将垂直入射光分别偏折至互相正交的空间通道，在远场形成正交分离的双波段光斑Figure 1. Schematic of a polarization-independent dual-band metasurface with orthogonal beam deflection. Under normal incidence, the single-layer all-dielectric metasurface redirects the two operating wavelengths
$ {\lambda }_{1} $ and$ {\lambda }_{2} $ into mutually orthogonal spatial channels, yielding orthogonally separated far-field spots
图 2 超表面单元结构图。硅纳米柱周期性排布在二氧化硅基底上，横向周期P=500 nm，柱高H=800 nm，半径r=50-150 nm
Figure 2. Schematic of the metasurface unit. Silicon nanopillars are periodically arranged on a silica substrate, with a lateral period P=500 nm，pillar height H=800 nm，and radius r =50-150 nm
图 5 透射率和反射率随圆柱半径变化的关系曲线
Figure 5. Transmission and reflection spectra as functions of the nanopillar radius
图 6 800 nm波长下透射相位与透射率随纳米柱半径的变化。插图为结构示意图所示柱半径从左到右依次为75、78.6、83.6、121.2、149.7 nm
Figure 6. Simulated transmission phase and efficiency as a function of nanopillar radius at 800 nm. The inset shows the unit-cell structure with radii of 75, 78.6, 83.6, 121.2, and 149.7 nm from left to right
图 7 800 nm波长下超表面x−z平面透射相位分布
Figure 7. x−z plane transmitted phase of the metasurface at 800 nm
图 8
1150 nm波长下透射相位与透射率随纳米柱半径的变化。插图为单元结构示意图所示柱半径从左到右依次为62、101.8、115.2、124.5、132.6、140 nmFigure 8. Simulated transmission phase and efficiency as a function of nanopillar radius at
1150 nm. The inset shows the unit-cell structure with radii of 62, 101.8, 115.2, 124.5，132.6 and 140 nm from left to right
图 9
1150 nm波长下超表面x−z平面透射相位分布Figure 9. x−z plane transmitted phase of the metasurface at
1150 nm
图 10 超表面单元在非目标波段入射条件下的相位响应分析。(a)
1150 nm入射条件下800 nm组的各单元相位变化与相位分布；(b) 800 nm入射条件下1150 nm组的各单元相位变化与相位分布Figure 10. Phase response analysis of metasurface elements under. (a) Phase changes and phase distribution of each element in the 800 nm group under an incident light condition of
1150 nm. (b) Phase changes and phase distribution of each element in the1150 nm group under an 800 nm incident condition non-target wavelength incident conditions
图 11 旋转90°交错排列相位梯度超原子示意图
Figure 11. Schematic diagram of a 90°rotated staggered phase gradient superatom
图 12 双波段正交透射偏折相位分布的数值仿真结果。其中虚线表示等相面，箭头表示光的传播方向。(a) 入射波长800 nm时x-z面的透射相位分布；(b) 入射波长1150 nm时y-z面的透射相位分布。
Figure 12. Numerical simulations of dual-band orthogonal transmitted phase distributions。where the dashed lines represent the equi-phase surfaces and the arrows indicate the light propagation direction. (a) Phase distribution at the incident wavelength of 800 nm in the x−z plane; (b) Phase distribution at the incident wavelength of
1150 nm in the y−z plane
图 13 超表面阵列在双波段条件下的透射远场强度分布。(a) 800 nm 工作波长下的透射远场强度分布图；(b)
1150 nm 工作波长下的透射远场强度分布图Figure 13. Dual-band far-field transmitted intensity distributions of the metasurface array. (a) Far-field intensity pattern at 800 nm wavelength; (b) Far-field intensity pattern at
1150 nm wavelength -
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