通过使用无掺杂的Al<sub>0.8</sub>Ga<sub>0.2</sub>N条状薄层结构提高无电子阻挡层的AlGaN深紫外激光二极管的性能

桑習恩; 王芳; 刘俊杰; 刘玉怀

doi:10.37188/CO.EN-2025-0033

通过使用无掺杂的Al_0.8Ga_0.2N条状薄层结构提高无电子阻挡层的AlGaN深紫外激光二极管的性能

桑習恩^1,,
王芳^{1, 2, 3, 4, ,},
刘俊杰⁵,
刘玉怀^{1, 2, 3, 4, ,}

1.
郑州大学电气与信息工程学院, 电子材料与系统国际联合研究中心, 河南省电子材料与系统国际联合实验室, 郑州 450001
2.
教育部集成电路设计与应用国际合作联合实验室, 郑州 450001
3.
郑州大学智能传感研究院, 郑州大学产业技术研究院有限公司, 郑州 450001
4.
郑州唯独电子科技有限公司, 郑州 450001
5.
北方民族大学电气与信息工程学院, 银川 750001

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中图分类号: O472
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出版历程
- 收稿日期: 2025-06-16
- 录用日期: 2025-09-01
- 网络出版日期: 2025-09-20

Enhanced performance in AlGaN deep-ultraviolet laser diodes without an electron blocking layer by using a thin undoped Al_0.8Ga_0.2N strip layer structure

doi: 10.37188/CO.EN-2025-0033

SANG Xi-en^1
,,
WANG Fang^{1, 2, 3, 4
, ,},
LIU Jun-jie⁵,
LIU Yu-huai^{1, 2, 3, 4
, ,}

1.
National Center for International Joint Research of Electronic Materials and Systems, International Joint-Laboratory of Electronic Materials and Systems of Henan Province, School of Electrical and Information Engineering, Zhengzhou University, Zhengzhou, Henan 450001, P. R. China
2.
Institute of Intelligence Sensing, Zhengzhou University, Zhengzhou, Henan 450001, P. R. China
3.
Research Institute of Industrial Technology Co. Ltd., Zhengzhou University, Zhengzhou, Henan 450001, P. R. China
4.
Zhengzhou Way Do Electronics Co. Ltd., Zhengzhou, Henan 450001, P. R. China
5.
School of Electrical and Information Engineering, North Minzu University, Yinchuan, Ningxia 750001, P. R. China

Funds: Supported by National Nature Science Foundation of China (No. 62174148); National Key Research and Development Program (NKRDP Grant No. 2022YFE0112000); Key Program for International Joint Research of Henan Province (No. 231111520300).

More Information

Author Bio:
SANG Xi-en (1999—), Male, Zhumadian, Henan Province, Ph.D. enrolled in Zhengzhou University University for Ph.D. in 2024, mainly engaged in the research of nitride semiconductor devices and materials. E-mail: zzuxien@163.com

LIU Yu-huai (1969—), Male, Fuyang, Anhui, Ph.D., Professor, Ph.D. Supervisor, joined Zhengzhou University in 2011, worked in Japan from nitride semiconductor materials and devices research and product development for more than ten years. His research interests include the core technology of nitride semiconductor-based blue LEDs and LDs, UV LEDs, IR LDs and HBTs, HEMTs and other devices. E-mail: ieyhliu@zzu.edu.cn

Corresponding author: iefwang@zzu.edu.cn; ieyhliu@zzu.edu.cn

摘要

摘要:
基于氮化铝的深紫外激光二极管通常使用电子阻挡层来防止电子泄漏到 p 型区。然而，电子阻挡层也会阻碍空穴注入有源区，导致激光效率降低。为了解决这个问题，我们建议在最后一个量子势垒之后使用未掺杂的薄 Al_0.8Ga_0.2N 条状结构来代替电子阻挡层。研究结果表明，与使用电子阻挡层的传统激光设计相比，1 nm Al_0.8Ga_0.2N 带状层可以通过增加有效势垒高度来有效抑制电子泄漏并增强空穴注入。有源区的载流子浓度和量子阱的重组效率提高，进而增加了激光器的输出功率。
- AlGaN /
- 深紫外激光器 /
- 未掺杂条状薄层 /
- 无电子阻挡层
Abstract:
AlGaN-based deep-ultraviolet (DUV) laser diodes (LDs) face performance challenges due to electron leakage and poor hole injection, often worsened by polarization effects from conventional electron blocking layers (EBLs). To overcome these limitations, we propose an EBL-free DUV LD design incorporating a 1-nm undoped Al_0.8Ga_0.2N thin strip layer after the last quantum barrier. Using PICS3D simulations, we evaluate the optical and electrical characteristics. Results show a significant increase in effective electron barrier height (from 158.2 meV to 420.7 meV) and a reduction in hole barrier height (from 149.2 meV to 62.8 meV), which enhance carrier injection and reduce leakage. The optimized structure (LD3) achieves a 14% increase in output power, improved slope efficiency (1.85 W/A), and lower threshold current. This design also reduces the quantum confined Stark effect and forms dual hole accumulation regions, improving recombination efficiency. Our findings present a promising approach for high-performance, EBL-free DUV LDs suitable for high-power applications.
- AlGaN /
- deep ultraviolet laser diodes /
- undoped thin strip structure /
- without an electron blocking layers

HTML全文

Figure 1. (a) Schematics of the DUV-LD structure, and (b) LD1, LD2, and LD3 structure diagram

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Figure 2. Energy band diagram and quasi-fermi level (a) LD1, (b) LD2, and (c) LD3

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Figure 3. (a) Electron leakage in the p-type region of three structures, and (b) hole concentration of the three structures

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Figure 4. (a) P-I curve of three structures, and (b) I-V curve of three structures

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Figure 5. (a) The electron concentration in the MQWs, (b) the hole concentration in the MQWs, (c) stimulated recombination rate in MQWs, and (d) numerically calculated near-field optical model profile for LD1, LD2, and LD3

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Figure 6. (a) Electron current density of three structures, and (b) hole current density of three structures

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Figure 7. (a) LD2 output power of different Al components, (b) LD2 recombination rates of different Al components in MQWs, (c) output power with different thickness of Al_0.8Ga_0.2N strip of LD2, and (d) recombination rates with different thickness of Al_0.8Ga_0.2N $ {\text{Al}}_{\text{0.8}}{\text{Ga}}_{\text{0.2}}\text{N} $strip of LD2 in MQWs

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Figure 8. (a) LD3 output power of different Al components, (b) LD3 recombination rates of different Al components in MQWs, (c) output power with different thickness of Al_0.8Ga_0.2N $ {\text{Al}}_{\text{0.8}}{\text{Ga}}_{\text{0.2}}\text{N} $strip of LD3, and (d) recombination rates with different thickness of Al_0.8Ga_0.2N strip of LD3 in MQWs

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Figure 9. (a) Electric field distribution of different al components of LD3, (b) Electric field distribution of LD3 with different thicknes

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