ZnO纳米棒/多孔GaN异质结的制备及紫外探测性能研究

杨旭东; 贾伟; 肖燕青; 王夏龙; 李天保; 翟光美; 董海亮; 许并社

doi:10.3724/CO.EN-2026-0016

ZnO纳米棒/多孔GaN异质结的制备及紫外探测性能研究

杨旭东^1,,
贾伟^1, ,,
肖燕青³,
王夏龙¹,
李天保¹,
翟光美¹,
董海亮¹,
许并社^{1, 2}

1.
太原理工大学新材料界面科学与工程教育部重点实验室, 山西太原 030024
2.
陕西科技大学原子与分子科学研究所, 陕西西安 710021
3.
山西鼎芯晶体材料有限公司, 山西太原 030032

详细信息

中图分类号: TN248.4
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出版历程
- 收稿日期: 2026-05-19
- 修回日期: 2026-05-28
- 录用日期: 2026-06-03
- 网络出版日期: 2026-07-25

Fabrication and ultraviolet detection performance of ZnO NRs/Porous GaN heterojunction

doi: 10.3724/CO.EN-2026-0016

1.
Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Taiyuan 030024, China
2.
Institute of Atomic and Molecular Science, Shanxi University of Science and Technology, Xi’an 710021, China
3.
Shanxi Dingxin Crystal Materials Co., Ltd, Taiyuan 030032, China

Funds: Supported by Key R&D Program of Shanxi Province (No.202502030202046)

More Information

Author Bio:
YANG Xu-dong (2001—), male, born in Changzhi, Shanxi Province, master’s student. He received his bachelor’s degree from Taiyuan University of Science and Technology in 2023. His research mainly focuses on optoelectronic materials and devices. E-mail: yyyxudong@163.com

JIA Wei (1983—), male, born in Yuncheng, Shanxi Province, Ph.D., Senior Technician, Master’s Supervisor, received his Ph.D. degree from Taiyuan University of Technology in 2013. His main research focuses on semiconductor optoelectronic materials and devices. E-mail: jiawei@tyut.edu.cn

Corresponding author: jiawei@tyut.edu.cn

摘要

摘要:
传统ZnO/GaN异质结紫外光电探测器仍存在界面接触面积有限、载流子输运效率不足以及ZnO本征缺陷影响光电响应的问题，限制了器件性能的进一步提升。本文采用低温水热法在多孔p-GaN/Al₂O₃衬底上生长了不同Ga掺杂浓度的Ga+Al共掺杂ZnO纳米棒阵列，并制备了相应的Ga+Al共掺杂ZnO纳米棒/多孔GaN异质结。通过多孔p-GaN增强异质结界面接触与光吸收，并利用Ga+Al共掺杂调控ZnO纳米棒的缺陷状态和载流子输运性能，从而提高器件的自供电紫外探测性能。结果表明：在0 V偏压和365 nm紫外光照下，Ga掺杂浓度为3%时器件表现出最佳的紫外探测性能，其光暗电流比为8250、响应度（R）为0.158 A/W、比探测率（D*）为3.15×10¹² Jones、外量子效率（EQE）为53.5%。该研究为制备下一代高性能ZnO/GaN基异质结紫外光电探测器提供了一定的理论指导和实验数据。
- 多孔GaN /
- 低温水热法 /
- ZnO纳米棒 /
- ZnO纳米棒/GaN异质结 /
- 紫外光电探测器
Abstract:
Owing to the limited interfacial contact area, insufficient carrier transport efficiency, and the adverse effects of intrinsic defects in ZnO on photoresponse, further improvement in the performance of conventional ZnO/GaN heterojunction ultraviolet photodetectors remains restricted. To address these issues, Ga+Al co-doped ZnO nanorod arrays with different Ga doping concentrations were grown on porous p-GaN/Al₂O₃ substrates by a low-temperature hydrothermal method, and the corresponding Ga+Al co-doped ZnO nanorod/porous GaN heterojunctions were fabricated. The porous p-GaN structure was used to enhance heterojunction interfacial contact and light absorption, while Ga+Al co-doping was employed to regulate the defect states and carrier transport properties of ZnO nanorods, thereby improving the self-powered ultraviolet photodetection performance of the devices. The findings of the study demonstrated that under 365 nm ultraviolet illumination at 0 V bias, the device with a Ga doping concentration of 3% exhibited the best UV photodetection performance, with a light/dark current ratio of 8250, a responsivity (R) of 0.158 A/W, a specific detectivity (D*) of 3.15×10¹² Jones, and an external quantum efficiency (EQE) of 53.5%. This study provides useful theoretical insight and experimental support for the development of next-generation high-performance ZnO/GaN-based heterojunction ultraviolet photodetectors.
- porous GaN /
- low-temperature hydrothermal method /
- ZnO nanorods /
- ZnO nanorod/GaN heterojunction /
- ultraviolet photodetector

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Figure 1. Fabrication process of the ZnO NRs/porous GaN heterojunction

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Figure 2. (a,b) SEM images of porous p-GaN films. top-view SEM images of Ga+Al co-doped ZnO NRs/porous GaN with different Ga doping concentrations.(c) S0; (d) S1; (e) S2; and (f) S3

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Figure 3. XRD patterns of Ga+Al co-doped ZnO NRs/porous GaN heterojunctions with different Ga doping concentrations

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Figure 4. (a) Photoluminescence spectra; (b) UV-visible absorption spectra; and (c) Tauc plots of Ga+Al co-doped ZnO NRs/porous GaN heterojunctions with different Ga doping concentrations

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Figure 5. XPS spectra of Ga+Al co-doped ZnO NRs/porous GaN heterojunctions with different Ga doping concentrations. (a) Survey spectra; (b) Zn 2p spectra; (c) Al 2p spectra; (d) Ga 2p spectra, and (e) O1s spectra

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Figure 6. I-V characteristics of Ga+Al co-doped ZnO NRs/porous GaN heterojunctions with different Ga doping concentrations. (a)S0; (b)S1; (c)S2; (d)S3

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Figure 7. (a) I-T characteristic curves and (b) time response curves of Ga+Al co-doped ZnO NRs/porous GaN heterojunctions with different Ga doping concentrations under zero bias and 365 nm illumination; (c) energy band diagrams of ZnO/GaN heterojunction

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Table 1. Performance comparison of the ZnO NRs/porous GaN heterojunction photodetector (sample S2) and other reported ZnO/GaN based photodetectors under 0 V bias

Photodetector	$\lambda $/nm	R/(mA·W)	D* /Jones	EQE/%	Reference
P-GaN/n-ZnO film	368	11	6.2×10¹¹	3.71	[22]
P-GaN/n-ZnO NRs	365	138.9	10¹²	47.6	[39]
P-GaN/n-ZnO microwire	370	137	2.15×10¹²	45.9	[3]
P-GaN/n-ZnO:Ga NRs	365	230	2.32×10¹²		[40]
P-GaN/n-ZnO: In+La film	366	46	9.92×10¹¹	15.6	[26]
P-GaN/n-ZnO:Ga+In NRs		5.29	7.98×10⁹	1.79	[27]
Porous p-GaN/n-ZnO:Ga+Al NRs	365	158	3.15×10¹²	53.5	This work

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