基于二硫化钼相变的高效太赫兹振幅调制器

申彦春; 何镇武; 罗卓彬; 盘关泉; 詹佩怡; 魏东山; 赵以亮

doi:10.3724/CO.EN-2026-0023

基于二硫化钼相变的高效太赫兹振幅调制器

1.
广州铁路职业技术学院轨道交通学院, 广州 511300
2.
海南师范大学物理与电子工程学院, 海口 571158
3.
中国铁路青藏集团有限公司西宁通信段, 西宁 810007

详细信息

中图分类号: O436
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出版历程
- 收稿日期: 2026-06-03
- 录用日期: 2026-07-07
- 网络出版日期: 2026-09-28

A highly efficient terahertz amplitude modulator based on the phase transition of MoS₂

doi: 10.3724/CO.EN-2026-0023

1.
School of Railway Transportation, Guangzhou Railway Polytechnic, Guangzhou 511300, China
2.
School of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, China
3.
Xining Communication Section, China Railway Qingzang Group Co., Ltd., Xining, China, 810007

Funds: Supported by National Natural Science Foundation of China (No. 62475276, No. 12204457)

More Information

Author Bio:
SHEN Yan-chun (1980—), Male, born in Guangzhou, Guangdong Province, Ph.D. and Professor. His research interest is Terahertz liquid crystal devices. E-mail: shenyanchun@gtxy.edu.cn

WEI Dong-shan (1979—), Male, born in Chibi, Hubei Province, Ph.D., Professor and Doctor’s supervisor. His research interests include Terahertz spectroscopy and optoelectric sensing detection technology. Email: dswei@hainnu.edu.cn

Corresponding author: dswei@hainnu.edu.cn

摘要

摘要:
基于超表面的太赫兹（THz）波调控在太赫兹通信、成像及探测领域具有重要应用价值。本研究提出一种二硫化钼（MoS₂）超表面结构，可在极低驱动电压下实现太赫兹振幅调制,其单元微纳结构为二硫化钼层连接的非对称 “H” 型。仿真结果表明，通过电控调控 “H” 型连接处的相变，该调制器可在0.58 THz处实现大幅振幅调制，调制深度达98%，插入损耗低至20%，其调控机理可通过分析相变前后不同结构位置的电场分布与衍射图样得到解释。为验证设计方案，对厚度为 2 μm 的二硫化钼薄膜进行电学测试，结果显示：在0~±1 V的低驱动电压小幅变化下，二硫化钼薄膜电阻率变化近6个数量级，证实了界面型超表面调控的可行性。本研究可为太赫兹振幅调制提供一种新方法，有望推动太赫兹调控器件的实用化发展。
- 太赫兹调制器 /
- 二硫化钼(MoS₂) /
- 超表面 /
- 相变 /
- 低驱动电压 /
- 衍射图样
Abstract:
Terahertz (THz) wave modulation via metasurfaces exhibits considerable applications in THz communications, imaging, and detection. In this study, a molybdenum disulfide (MoS₂) metasurface is proposed to realize THz amplitude modulation at very low trigger voltages. The unit micro-nanostructure is characterized by a broken “H” shape linked by a MoS₂ layer. Simulation results indicate that the electrical control of the phase transition at the “H” junction can enable substantial amplitude modulation at 0.58 THz with a modulation rate of 98% and a low insertion loss of 20%. The modulation mechanism is elucidated by analyzing the electric field distributions at different structural positions and the diffraction patterns before and after the phase transition. To verify the design, electrical measurements in experiment are carried out on a MoS₂ layer with the same thickness of 2 μm and the resistivity of the measured MoS₂ layer varied by nearly six orders of magnitude with a minor change of the low trigger voltage from 0 to ±1 V, validating the feasibility of the interfacial metasurface control. This study is anticipated to offer a novel method for THz amplitude modulation, and promote the practical development of THz modulation devices.
- terahertz modulator /
- molybdenum disulfide (MoS₂) /
- metasurface /
- phase transition /
- low trigger voltage /
- diffraction pattern

HTML全文

Figure 1. Schematic of the metasurface's micro-nano unit structure (the red square marks the phase transition region) and a demonstration of its transmission modulation application.

下载: 全尺寸图片幻灯片

Figure 2. (a) Schematic of electrical characterization of MoS₂ via digital source table; (b)The resistance measurement sample of a MoS₂ layer with two disconnected silver electrodes; (c)Voltage-dependent resistance data of the MoS₂ layer.

下载: 全尺寸图片幻灯片

Figure 3. (a) The unit micro-nanostructure of the electrically controlled MoS₂ metasurface where the white region represents the Ag electrode, the blue region represents the SiO₂ layer under the layer of the Ag electrode and the grey region represents the MoS₂ layer; (b) Resonance spectra of the unit micro-nanostructures before and after the electrical-controlled phase transition (the light red region indicates the operating frequency); (c) Electric field distribution at the interface of the unit micro-nanostructures when MoS₂ is in the 2H phase. (d) Electric field distribution at the interface of the unit micro-nanostructures when MoS₂ is in the 1T phase.

下载: 全尺寸图片幻灯片

Figure 4. THz Amplitude variation with position of gratings with different grating constants: (a) 600 μm, (b) 1200 μm, and (c) 1800 μm and the corresponding simulated diffraction patterns of frequency (d)-(f) and intensity at 0.58 THz (g)-(i).

下载: 全尺寸图片幻灯片

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