Volume 14 Issue 1
Jan.  2021
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Chinese Optics  > 2021  >  14(1): 196-205.
JIANG Yi-yang, CHEN Yan, WANG Xu-dong, ZHAO Dong-yang, LIN Tie, SHEN Hong, MENG Xiang-jian, WANG Lin, WANG Jian-lu. Fabrication and optoelectronic characterization of suspended In2O3 nanowire transistors[J]. Chinese Optics, 2021, 14(1): 196-205. doi: 10.37188/CO.2020-0062
Citation: JIANG Yi-yang, CHEN Yan, WANG Xu-dong, ZHAO Dong-yang, LIN Tie, SHEN Hong, MENG Xiang-jian, WANG Lin, WANG Jian-lu. Fabrication and optoelectronic characterization of suspended In2O3 nanowire transistors[J]. Chinese Optics, 2021, 14(1): 196-205. doi: 10.37188/CO.2020-0062
shu

Fabrication and optoelectronic characterization of suspended In2O3 nanowire transistors

  • 1.

    School of Materials Science & Engineering, Shanghai University, Shanghai 200444, China

  • 2.

    State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

Funds:  Supported by National Natural Science Foundation of China (No. 61521001, No. 61574151); Program on Key Basic Research Project (No. 2016YFA0203900, No. 2016YFB0400801); Program of the Chinese Academy of Science (No. QYZDB-SSW-JCS016, No. QYZDY-SSW-JSC042)
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  • Author Bio:

    JIANG Yi-yang (1995—), Master, School of Materials Science & Engineering, Shanghai University. His place of birth is Yangzhou, Jiangsu. His research interests are on nanowire-based photodetectors. E-mail: Jiangyiyang95@163.com

    CHEN Yan (1991—), Dr, Shanghai Institute of Technical Physics, Microelectronics and Solid-state Electronics, Chinese Academy of Sciences. Place of birth is Nantong, Jiangsu. Her research interests are on optoelectronics based on low-dimensional materials and their heterostructures. E-mail: cherry16@mail.sitp.ac.cn

    WANG Jian-lu (1981—), Dr, Professor, Shanghai Institute of Technical Physics, Microelectronics and Solid-state Electronics, Chinese Academy of Sciences. His place of birth is Pingyao, Shanxi. His research interests currently focus on ferroelectrics, 2D materials and their related electronic and optoelectronic devices. E-mail: jlwang@sitp.ac.cn

  • Corresponding author: cherry16@mail.sitp.ac.cn; jlwang@sitp.ac.cn
  • Received Date: 14 Apr 2020
  • Rev Recd Date: 03 May 2020
    • Available Online: 29 Dec 2020
  • Publish Date: 25 Jan 2021
    Abstract
  • One-dimensional (1D) semiconductor nanowires have shown outstanding performance in nano-electronics and nano-photonics. However, the electrical properties of the nanowire transistors are very sensitive to interactions between the nanowires and substrates. Optimizing the device structure can improve the electrical and photodetection performance of nanowire transistors. We report a suspended In2O3 nanowire transistor fabricated by one-step lithography, showing a high mobility of 54.6 cm2V−1s−1 and a low subthreshold swing of 241.5 mVdec−1. As an ultraviolet photodetector, the phototransistor shows an extremely low dark current (~10−13 A) and a high responsivity of 1.6×105 A•W−1. This simple and effective method of suspending the channel material of a transistor can be widely used in manufacturing high-performance micro-nano devices.

     

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