Volume 14 Issue 1
Jan.  2021
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ZHANG Xing-chao, PAN Rui, HAN Jia-yue, DONG Xiang, WANG Jun. Recent progress and prospects of topological quantum material-based photodetectors[J]. Chinese Optics, 2021, 14(1): 43-65. doi: 10.37188/CO.2020-0096
Citation: ZHANG Xing-chao, PAN Rui, HAN Jia-yue, DONG Xiang, WANG Jun. Recent progress and prospects of topological quantum material-based photodetectors[J]. Chinese Optics, 2021, 14(1): 43-65. doi: 10.37188/CO.2020-0096

Recent progress and prospects of topological quantum material-based photodetectors

Funds:  Supported by Outstanding Youth Foundation of National Natural Science Foundation of China (No. 61922022); Foundation for Innovative Research Groups of the National Natural Science Foundation of China (No.61421002); National Natural Science Foundation of China (No. 61875031)
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  • The discovery of the topological quantum states of matter is a major milestone in condensed matter physics and material science. Due to the existence of special surface states (e.g. Dirac fermions, Weyl fermions, Majorana fermions), topological quantum materials can usually exhibit some novel physical properties (such as the quantum anomalous Hall effect, 3D quantum Hall effect, Zero-band gap caused by topological states, ultra-high carrier mobility, etc.), which are different from conventional semiconductors. Because of this, there is an abundance of prospects for applications in low-power electronic and optoelectronic devices, especially in broad-spectrum detection. However, the application of topological quantum materials in the field of photoelectric detection is still in the exploratory stage at present. This article reviews the characteristics and preparation methods of topological quantum materials and the development status with respect to optical-sensing materials in photodetectors. The structure and performance of the devices based on topological quantum materials are also mentioned as the development prospects in the field of broad-spectrum detection.

     

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