Volume 14 Issue 1
Jan.  2021
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Chinese Optics  > 2021  >  14(1): 18-42.
WANG Yun-kun, LI Yao-long, GAO Yu-nan. Progress on defect and related carrier dynamics in two-dimensional transition metal chalcogenides[J]. Chinese Optics, 2021, 14(1): 18-42. doi: 10.37188/CO.2020-0106
Citation: WANG Yun-kun, LI Yao-long, GAO Yu-nan. Progress on defect and related carrier dynamics in two-dimensional transition metal chalcogenides[J]. Chinese Optics, 2021, 14(1): 18-42. doi: 10.37188/CO.2020-0106
shu

Progress on defect and related carrier dynamics in two-dimensional transition metal chalcogenides

  • 1.

    State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China

  • 2.

    Frontiers Science Center for Nano-optoelectronics, Peking University, Beijing 100871, China

Funds:  Supported by National Key Research and Development Project (No. 2018YFA0306302); National Natural Science Foundation of China (No. 61875002)
More Information
  • Corresponding author: gyn@pku.edu.cn
  • Received Date: 15 Jun 2020
  • Rev Recd Date: 27 Jul 2020
    • Available Online: 05 Jan 2021
  • Publish Date: 25 Jan 2021
    Abstract
  • Because of their unique physical properties, the monolayer and few-layer two-dimensional transition metal chalcogenides with atomic-level thickness are expected to play an important role in the next generation of optoelectronic devices. However, defects in two-dimensional materials affect their properties to a great extent. On one hand, defects reduce the fluorescence quantum efficiency, carrier mobility and other important device parameters. On the other hand, the control and utilization of defects have given birth to new techniques such as using single-photon sources. Therefore, it is very important to characterize, understand, handle and control the defects in two-dimensional materials. In this review, the research progress on defects and its related carrier dynamics in two-dimensional transition metal chalcogenides is summarized. This paper aims to sort out the great influence of defects and their related ultrafast dynamics on material performance in two-dimensional transition metal chalcogenides, and to support studies on fundamental physical properties and high-performance optoelectronic devices.

     

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