Volume 14 Issue 1
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Chinese Optics  > 2021  >  14(1): 170-181.
HOU Xiang-yu, QIU Teng. Defects- and interface-enhanced Raman scattering in low-dimensional optoelectronic materials[J]. Chinese Optics, 2021, 14(1): 170-181. doi: 10.37188/CO.2020-0145
Citation: HOU Xiang-yu, QIU Teng. Defects- and interface-enhanced Raman scattering in low-dimensional optoelectronic materials[J]. Chinese Optics, 2021, 14(1): 170-181. doi: 10.37188/CO.2020-0145
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Defects- and interface-enhanced Raman scattering in low-dimensional optoelectronic materials

  • School of Physics, Southeast University, Nanjing 211189, China

Funds:  Supported by National Natural Science Foundation of China (No. 11874108); National Key R&D Program of China (No. 2017YFA0403600)
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  • Corresponding author: tqiu@seu.edu.cn
  • Received Date: 18 Aug 2020
  • Rev Recd Date: 11 Sep 2020
    • Available Online: 29 Dec 2020
  • Publish Date: 25 Jan 2021
    Abstract
  • In recent years, a series of new low-dimensional optoelectronic materials with excellent properties have emerged. Combined with surface-enhanced Raman scattering (SERS) technology, they show great application potential and are expected to become highly sensitive SERS substrates. Defects and interface regulation of low-dimensional optoelectronic materials are important strategies for their applications in SERS technology. In this paper, the types and enhancement mechanisms of defects- and interface-enhanced Raman scattering in new low-dimensional optoelectronic materials are introduced. By looking forward to the application and research prospect of defects- and interface-enhanced Raman scattering, this work might inspire people to reconsider and further understand the study of SERS.

     

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