Volume 14 Issue 1
Jan.  2021
Turn off MathJax
Article Contents
Chinese Optics  > 2021  >  14(1): 153-162.
JIANG Cheng-wei, SHA Yuan-qing, YUAN Jia-lei, WANG Yong-jin, LI Xin. Fabrication and characterization of an LED based on a GaN-on-silicon platform with an ultra-thin freestanding membrane in the blue range[J]. Chinese Optics, 2021, 14(1): 153-162. doi: 10.37188/CO.2020-0148
Citation: JIANG Cheng-wei, SHA Yuan-qing, YUAN Jia-lei, WANG Yong-jin, LI Xin. Fabrication and characterization of an LED based on a GaN-on-silicon platform with an ultra-thin freestanding membrane in the blue range[J]. Chinese Optics, 2021, 14(1): 153-162. doi: 10.37188/CO.2020-0148
shu

Fabrication and characterization of an LED based on a GaN-on-silicon platform with an ultra-thin freestanding membrane in the blue range

  • College of Telecommunications and Information, Nanjing University of Posts and Telecommunications, Nanjing 210003, China

Funds:  China Postdoctoral Science Foundation funded project (No. 2018M640508); Natural Science Foundation of the Jiangsu Higher Education Institutions (No. 18KJB510025); 1311 Talent Program of Nanjing University of Posts and Telecommunications; National Self-funding Project of Nanjing University of Posts and Telecommunications (No. NY218013)
More Information
  • Corresponding author: lixin1984@njupt.edu.cn
  • Received Date: 24 Aug 2020
  • Rev Recd Date: 11 Sep 2020
    • Available Online: 25 Dec 2020
  • Publish Date: 25 Jan 2021
    Abstract
  • In order to improve the opto-electronic performance and light extraction efficiency of LEDs based on a GaN-on-silicon platform, we proposed an LED device based on GaN-on-silicon with an ultra-thin freestanding membrane. By combining photolithography, deep reactive ion etching and inductively-coupled plasma reactive ion etching, we prepared an LED based on a GaN-on-silicon platform with an ultra-thin freestanding membrane, removing the silicon substrate of light-emitting area and most area of the electrodes, and thinning most of the GaN epitaxial layer. We performed three-dimensional morphology characterization for the LED device and found that the surface of the LED’s membrane is flat and that the membrane’s deformation is minimal. It is proved that the back process can solve the problem of membrane deformation caused by stress release between the GaN epitaxial layer and the silicon substrate. By characterizing the current-voltage and electroluminescence spectrum of the LED and comparing the LEDs with different structures and different light-emitting area sizes, we found that the opto-electronic performance and light output efficiency of the LED with an ultra-thin freestanding membrane are better than that of the common LED, and the change in size of the light-emitting area has a significant effect on the performance of the LED. Compared with the current of common LED, the current of the LED which has an ultra-thin freestanding membrane with 80-μm diameter light-emitting area increased from 4.3 mA to 23.9 mA under 15 V driving voltage. Under 3-mA current, the peak light intensity increased by about 5 times. The light-emitting efficiency of the LED with a 120-μm diameter light-emitting area is improved more perceptibly compared with that of LED with a 80-μm diameter light-emitting area. This research provides more possibilities for the development of high-performance LED devices with an ultra-thin freestanding membrane.

     

    • FullText(HTML)
  • loading
    • References(21)
  • [1]
    张雨茜, 陆志成, 张伟, 等. 硅基纳米柱GaN-LED的制备与光谱特性分析[J]. 光谱学与光谱分析,2019,39(8):2450-2453.

    ZHANG Y X, LU ZH CH, ZHANG W, et al. Study of the fabrication and spectral analysis of silicon-based nanocolumn GaN-LED[J]. Spectroscopy and Spectral Analysis, 2019, 39(8): 2450-2453. (in Chinese)
    [2]
    江孝伟, 赵建伟, 武华. 高光提取效率倒装发光二极管的设计与优化[J]. 激光与光电子学进展,2018,55(9):092302.

    JIANG X W, ZHAO J W, WU H. Design and optimization of flip-chip light-emitting diode with high light extraction efficiency[J]. Laser &Optoelectronics Progress, 2018, 55(9): 092302. (in Chinese)
    [3]
    洪国彬, 杨钧杰, 卢廷昌. 蓝紫光氮化镓光子晶体面射型激光器[J]. 中国光学,2014,7(4):559-571.

    HONG G B, YANG J J, LU T CH. Blue-violet GaN-based photonic crystal surface emitting lasers[J]. Chinese Optics, 2014, 7(4): 559-571. (in Chinese)
    [4]
    ALHASSAN A I, YOUNG E C, ALYAMANI A Y, et al. Reduced-droop green III–nitride light-emitting diodes utilizing GaN tunnel junction[J]. Applied Physics Express, 2018, 11(4): 042101. doi: 10.7567/APEX.11.042101
    [5]
    WONG M S, NAKAMURA S, DENBAARS S P. Review-progress in high performance III-Nitride micro-light-emitting diodes[J]. ECS Journal of Solid State Science and Technology, 2020, 9(1): 015012. doi: 10.1149/2.0302001JSS
    [6]
    WU T ZH, SHER C W, LIN Y, et al. Mini-LED and micro-LED: promising candidates for the next generation display technology[J]. Applied Sciences, 2018, 8(9): 1557. doi: 10.3390/app8091557
    [7]
    ZHANG X, LI P A, ZOU X B, et al. Active matrix monolithic LED micro-display using GaN-on-Si epilayers[J]. IEEE Photonics Technology Letters, 2019, 31(11): 865-868. doi: 10.1109/LPT.2019.2910729
    [8]
    KOESTER R, SAGER D, QUITSCH W A, et al. High-speed GaN/GaInN nanowire array light-emitting diode on silicon(111)[J]. Nano Letters, 2015, 15(4): 2318-2323. doi: 10.1021/nl504447j
    [9]
    HORNG R H, WU B R, TIEN C H, et al. Performance of GaN-based light-emitting diodes fabricated using GaN epilayers grown on silicon substrates[J]. Optics Express, 2014, 22(S1): A179-A187. doi: 10.1364/OE.22.00A179
    [10]
    MONAVARIAN M, RASHIDI A, ARAGON A A, et al. Impact of crystal orientation on the modulation bandwidth of InGaN/GaN light-emitting diodes[J]. Applied Physics Letters, 2018, 112(4): 041104. doi: 10.1063/1.5019730
    [11]
    YANG J, ZHAO D G, JIANG D S, et al. Emission efficiency enhanced by introduction of the homogeneous localization states in InGaN/GaN multiple quantum well LEDs[J]. Journal of Alloys and Compounds, 2016, 681: 522-526. doi: 10.1016/j.jallcom.2016.04.259
    [12]
    ISHIKAWA H, ASANO K, ZHANG B, et al. Improved characteristics of GaN-based light-emitting diodes by distributed Bragg reflector grown on Si[J]. Physica Status Solidi (A), 2004, 201(12): 2653-2657.
    [13]
    ISHIKAWA H, JIMBO T, EGAWA T. GaInN light emitting diodes with AlInN/GaN distributed Bragg reflector on Si[J]. Physica Status Solidi C, 2008, 5(6): 2086-2088. doi: 10.1002/pssc.200778441
    [14]
    ZHANG B J, EGAWA T, ISHIKAWA H, et al. Thin-film InGaN multiple-quantum-well light-emitting diodes transferred from Si (111) substrate onto copper carrier by selective lift-off[J]. Applied Physics Letters, 2005, 86(7): 071113. doi: 10.1063/1.1863412
    [15]
    DENG D M, YU N S, WANG Y, et al. InGaN-based light-emitting diodes grown and fabricated on nanopatterned Si substrates[J]. Applied Physics Letters, 2010, 96(20): 201106. doi: 10.1063/1.3427438
    [16]
    CHIU C H, LIN C C, DENG D M, et al. Optical and electrical properties of GaN-Based light emitting diodes grown on micro- and nano-scale patterned Si substrate[J]. IEEE Journal of Quantum Electronics, 2011, 47(7): 899-906. doi: 10.1109/JQE.2011.2114640
    [17]
    WAKUI M, SAMESHIMA H, HU F R, et al. Fabrication of GaN light emitting diode membrane on Si substrate for MEMS applications[J]. Microsystem Technologies, 2011, 17(1): 109-114. doi: 10.1007/s00542-010-1151-4
    [18]
    NAKAZATO H, KAWAGUCHI H, IWABUCHI A, et al. Micro fluorescent analysis system integrating GaN-light-emitting-diode on a silicon platform[J]. Lab on a Chip, 2012, 12(18): 3419-3425. doi: 10.1039/c2lc40178a
    [19]
    LI X, SHI ZH, ZHU G Y, et al. High efficiency membrane light emitting diode fabricated by back wafer thinning technique[J]. Applied Physics Letters, 2014, 105(3): 031109. doi: 10.1063/1.4890859
    [20]
    李欣, 沙源清, 蒋成伟, 等. 超薄氮化镓基LED悬空薄膜的制备及表征[J]. 中国光学,2020,13(4):873-883. doi: 10.37188/CO.2019-0192

    LI X, SHA Y Q, JIANG CH W, et al. Fabrication and characterization of ultra-thin GaN-based LED freestanding membrane[J]. Chinese Optics, 2020, 13(4): 873-883. (in Chinese) doi: 10.37188/CO.2019-0192
    [21]
    KANG B S, KIM S, KIM J, et al. Effect of external strain on the conductivity of AlGaN/GaN high-electron-mobility transistors[J]. Applied Physics Letters, 2003, 83(23): 4845-4847. doi: 10.1063/1.1631054
    • Relative Articles
    • Supplements(0)
    • Cited By
  • 加载中

Catalog

    通讯作者: 陈斌, bchen63@163.com
    • 1. 

      沈阳化工大学材料科学与工程学院 沈阳 110142

    1. 本站搜索
    2. 百度学术搜索
    3. 万方数据库搜索
    4. CNKI搜索

    Figures(9)

    Get Citation
    PDF
    XML
    Article views(2565) PDF downloads(182) Cited by()
    Proportional views
    Related

    Copyright© 2012 Editorial Office of Chinese Optics    吉ICP备11002662号

    Address: No. 3888 Southeast Lake Road, Changchun City, Jilin ProvinceTel: 投稿问题：0431-84627061（李老师）；财务问题：0431-86176852（王老师）；邮寄及发行：0431-86176862（张老师）

    Email: chineseoptics@ciomp.ac.cnChina Pos: 130033

    Supported by: Beijing Renhe Information Technology Co. Ltd  support: info@rhhz.net

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return