Volume 14 Issue 1
Jan.  2021
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Chinese Optics  > 2021  >  14(1): 206-212.
TIAN Hui-jun, LIU Qiao-li, YUE Heng, HU An-qi, GUO Xia. Hybrid graphene/n-GaAs photodiodes with high specific detectivity and high speed[J]. Chinese Optics, 2021, 14(1): 206-212. doi: 10.37188/CO.2020-0153
Citation: TIAN Hui-jun, LIU Qiao-li, YUE Heng, HU An-qi, GUO Xia. Hybrid graphene/n-GaAs photodiodes with high specific detectivity and high speed[J]. Chinese Optics, 2021, 14(1): 206-212. doi: 10.37188/CO.2020-0153
shu

Hybrid graphene/n-GaAs photodiodes with high specific detectivity and high speed

  • 1.

    Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China

  • 2.

    School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing 100876, China

Funds:  Supported by the National Key Research and Development Program of China (No. 2017YFF0104801); National Natural Science Foundation of China (No. 61804012)
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  • Author Bio:

    TIAN Hui-jun (1984—), PhD student, Institute of Laser Engineering, Beijing University of Technology, China. His research interests focus on graphene-based photodetectors. E-mail: tianhj@emails.bjut.edu.cn

    GUO Xia (1974—), Professor, School of Electronic Engineering, Beijing University of Posts and Telecommunications, China. Her research interests are on high-response PIN diodes, high speed VCSELs and ultrahigh-sensitive photodetectors in Graphene. E-mail: guox@bupt.edu.cn

  • Corresponding author: anqihu@bupt.edu.cn; guox@bupt.edu.cn
  • Received Date: 01 Sep 2020
  • Rev Recd Date: 14 Sep 2020
    • Available Online: 07 Dec 2020
  • Publish Date: 25 Jan 2021
    Abstract
  • Hybrid graphene/semiconductor phototransistors have attracted great attention because of their ultrahigh responsivity. However, the specific detectivity (D*) for such hybrid phototransistors obtained from source-drain electrodes is assumed to be 1/f noise. In this paper, D* of ~1.82×1011 Jones was achieved from source-gate electrodes. Compared with the same device which was measured from source-drain electrodes, D* was improved by ~500 times. This could be attributed to the carrier trapping and detrapping processes having been screened by the Schottky barrier at the interface. The rise and decay times were 4 ms and 37 ms, respectively. The temporal response speed also correspondingly improved by ~2 orders of magnitude. This work provides an alternative route toward light photodetectors with high specific detectivity and speed.

     

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