高比探测率和高速石墨烯/n-GaAs复合结构的光电探测器

田慧军; 刘巧莉; 岳恒; 胡安琪; 郭霞

doi:10.37188/CO.2020-0153

Volume 14 Issue 1

Jan. 2021

Turn off MathJax

Article Contents

Chinese Optics > 2021 > 14(1): 206-212.

TIAN Hui-jun, LIU Qiao-li, YUE Heng, HU An-qi, GUO Xia. Hybrid graphene/n-GaAs photodiodes with high specific detectivity and high speed[J]. Chinese Optics, 2021, 14(1): 206-212. doi: 10.37188/CO.2020-0153

Citation:

TIAN Hui-jun, LIU Qiao-li, YUE Heng, HU An-qi, GUO Xia. Hybrid graphene/n-GaAs photodiodes with high specific detectivity and high speed[J]. Chinese Optics, 2021, 14(1): 206-212. doi: 10.37188/CO.2020-0153

Citation:

PDF( 3377 KB)

Hybrid graphene/n-GaAs photodiodes with high specific detectivity and high speed

doi: 10.37188/CO.2020-0153

TIAN Hui-jun^{1, 2
,},
LIU Qiao-li²,
YUE Heng²,
HU An-qi^{2
,
,},
GUO Xia^{2
,
,}

1.
Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China
2.
School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing 100876, China

Funds: Supported by the National Key Research and Development Program of China (No. 2017YFF0104801); National Natural Science Foundation of China (No. 61804012)

More Information

Author Bio:
TIAN Hui-jun (1984—), PhD student, Institute of Laser Engineering, Beijing University of Technology, China. His research interests focus on graphene-based photodetectors. E-mail: tianhj@emails.bjut.edu.cn

GUO Xia (1974—), Professor, School of Electronic Engineering, Beijing University of Posts and Telecommunications, China. Her research interests are on high-response PIN diodes, high speed VCSELs and ultrahigh-sensitive photodetectors in Graphene. E-mail: guox@bupt.edu.cn
Corresponding author: anqihu@bupt.edu.cn; guox@bupt.edu.cn
Received Date: 01 Sep 2020
Rev Recd Date: 14 Sep 2020

Available Online: 07 Dec 2020

Publish Date: 25 Jan 2021

Abstract

Abstract

Hybrid graphene/semiconductor phototransistors have attracted great attention because of their ultrahigh responsivity. However, the specific detectivity (D^*) for such hybrid phototransistors obtained from source-drain electrodes is assumed to be 1/f noise. In this paper, D^* of ~1.82×10¹¹ Jones was achieved from source-gate electrodes. Compared with the same device which was measured from source-drain electrodes, D^* was improved by ~500 times. This could be attributed to the carrier trapping and detrapping processes having been screened by the Schottky barrier at the interface. The rise and decay times were 4 ms and 37 ms, respectively. The temporal response speed also correspondingly improved by ~2 orders of magnitude. This work provides an alternative route toward light photodetectors with high specific detectivity and speed.
- graphene,
- photodiode,
- specific detectivity,
- response speed

FullText(HTML)

References(24)

References

[1]	KOPPENS F H L, MUELLER T, AVOURIS P, et al. Photodetectors based on graphene, other two-dimensional materials and hybrid systems[J]. Nature Nanotechnology, 2014, 9(10): 780-793. doi: 10.1038/nnano.2014.215
[2]	NAIR R R, BLAKE P, GRIGORENKO A N, et al. Fine structure constant defines visual transparency of graphene[J]. Science, 2008, 320(5881): 1308. doi: 10.1126/science.1156965
[3]	GUO X T, WANG W H, NAN H Y, et al. High-performance graphene photodetector using interfacial gating[J]. Optica, 2016, 3(10): 1066-1070. doi: 10.1364/OPTICA.3.001066
[4]	GREBENCHUKOV A N, ZAITSEV A D, KHODZITSKY M K. Optically controlled narrowband terahertz switcher based on graphene[J]. Chinese Optics, 2018, 11(2): 166-173. doi: 10.3788/co.20181102.0166
[5]	HU A Q, TIAN H J, LIU Q L, et al. Graphene on self-assembled InGaN quantum dots enabling ultrahighly sensitive photodetectors[J]. Advanced Optical Materials, 2019, 7(8): 1801792. doi: 10.1002/adom.201801792
[6]	LIU Q L, TIAN H J, LI J W, et al. Hybrid graphene/Cu₂O quantum dot photodetectors with ultrahigh responsivity[J]. Advanced Optical Materials, 2019, 7(20): 1900455. doi: 10.1002/adom.201900455
[7]	GONG X, TONG M H, XIA Y J, et al. High-detectivity polymer photodetectors with spectral response from 300 nm to 1450 nm[J]. Science, 2009, 325(5948): 1665-1667. doi: 10.1126/science.1176706
[8]	WANG G SH, LU H, CHEN D J, et al. High quantum efficiency GaN-based p-i-n ultraviolet photodetectors prepared on patterned sapphire substrates[J]. IEEE Photonics Technology Letters, 2013, 25(7): 652-654. doi: 10.1109/LPT.2013.2248056
[9]	BALANDIN A A. Low-frequency 1/f noise in graphene devices[J]. Nature Nanotechnology, 2013, 8(8): 549-555. doi: 10.1038/nnano.2013.144
[10]	LU Y H, FENG S R, WU ZH Q, et al. Broadband surface plasmon resonance enhanced self-powered graphene/GaAs photodetector with ultrahigh detectivity[J]. Nano Energy, 2018, 47: 140-149. doi: 10.1016/j.nanoen.2018.02.056
[11]	TIAN H J, HU A Q, LIU Q L, et al. Interface-induced high responsivity in hybrid graphene/GaAs photodetector[J]. Advanced Optical Materials, 2020, 8(8): 1901741. doi: 10.1002/adom.201901741
[12]	HU W D, LI Q, CHEN X SH, et al. Recent progress on advanced infrared photodetectors[J]. Acta Physica Sinica, 2019, 68(12): 120701. (in Chinese)
[13]	CHEN Y Y, WANG C H, CHEN G S, et al. Self-powered n-Mg_xZn_1−xO/p-Si photodetector improved by alloying-enhanced piezopotential through piezo-phototronic effect[J]. Nano Energy, 2015, 11: 533-539. doi: 10.1016/j.nanoen.2014.09.037
[14]	FAUSKE V T, HUH J, DIVITINI G, et al. In situ heat-induced replacement of GaAs nanowires by Au[J]. Nano Letters, 2016, 16(5): 3051-3057. doi: 10.1021/acs.nanolett.6b00109
[15]	ZHANG X T, ZHANG L N, CHAN M S. Doping enhanced barrier lowering in graphene-silicon junctions[J]. Applied Physics Letters, 2016, 108(26): 263502. doi: 10.1063/1.4954799
[16]	LI X Q, LIN SH SH, LIN X, et al. Graphene/h-BN/GaAs sandwich diode as solar cell and photodetector[J]. Optics Express, 2016, 24(1): 134-145. doi: 10.1364/OE.24.000134
[17]	CANCADO L G, JORIO A, FERREIRA E H M, et al. Quantifying defects in graphene via Raman spectroscopy at different excitation energies[J]. Nano Letters, 2011, 11(8): 3190-3196. doi: 10.1021/nl201432g
[18]	HAO Y F, WANG Y Y, WANG L, et al. Probing layer number and stacking order of few-layer graphene by Raman spectroscopy[J]. Small, 2010, 6(2): 195-200. doi: 10.1002/smll.200901173
[19]	DI BARTOLOMEO A. Graphene Schottky diodes: an experimental review of the rectifying graphene/semiconductor heterojunction[J]. Physics Reports, 2016, 606: 1-58. doi: 10.1016/j.physrep.2015.10.003
[20]	TONGAY S, LEMAITRE M, MIAO X, et al. Rectification at graphene-semiconductor interfaces: zero-gap semiconductor-based diodes[J]. Physics Review X, 2012, 2(1): 011002.
[21]	LIN F, CHEN SH W, MENG J, et al. Graphene/GaN diodes for ultraviolet and visible photodetectors[J]. Applied Physics Letters, 2014, 105(7): 073103. doi: 10.1063/1.4893609
[22]	NI ZH Y, MA L L, DU S CH, et al. Plasmonic silicon quantum dots enabled high-sensitivity ultrabroadband photodetection of graphene-based hybrid phototransistors[J]. ACS Nano, 2017, 11(10): 9854-9862. doi: 10.1021/acsnano.7b03569
[23]	ZENG L H, WU D, LIN SH H, et al. Controlled synthesis of 2D palladium diselenide for sensitive photodetector applications[J]. Advanced Functional Materials, 2019, 29(1): 1806878. doi: 10.1002/adfm.201806878
[24]	MEIRZADEH E, CHRISTENSEN D V, MAKAGON E, et al. Surface pyroelectricity in cubic SrTiO3[J]. Advanced Materials, 2019, 31(44): 1904733. doi: 10.1002/adma.201904733