Volume 12 Issue 5
Oct.  2019
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Chinese Optics  > 2019  >  12(5): 1076-1089.
YANG Cheng-cai, JU Guo-hao, CHEN Yong-ping. Study on the photo response of a CMOS sensor integrated with PIN photodiodes[J]. Chinese Optics, 2019, 12(5): 1076-1089. doi: 10.3788/CO.20191205.1076
Citation: YANG Cheng-cai, JU Guo-hao, CHEN Yong-ping. Study on the photo response of a CMOS sensor integrated with PIN photodiodes[J]. Chinese Optics, 2019, 12(5): 1076-1089. doi: 10.3788/CO.20191205.1076
shu

Study on the photo response of a CMOS sensor integrated with PIN photodiodes

  • 1.

    Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

  • 2.

    University of Chinese Academy of Sciences, Beijing 100049, China

  • 3.

    School of Information Science & Technology, Shanghai Tech University, Shanghai 201210, China

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  • Author Bio:

    YANG Cheng-cai (1992-):Tai'An, Shandong Province, Graduated from Northeastern University in 2016, and currently pursuing a master's degree in Shanghai Institute of Technical Physics, Chinese Academy of Sciences.He mainly engages in the research of CMOS image sensor design and read-out circuits design.E-mail:tomasyoung@mail.ustc.edu.cn

    CHEN Yong-ping (1963-):Professor, Shanghai Institute of Technical Physics, Chinese Academy of Sciences.His research interests are on design of high-performance CMOS image sensors.E-mail:chen_yp@mail.sitp.ac.cn

  • Corresponding author: CHEN Yong-ping, E-mail:chen_yp@mail.sitp.ac.cn
  • Received Date: 07 Nov 2018
  • Rev Recd Date: 29 Dec 2018
  • Publish Date: 01 Oct 2019
    Abstract
  • Traditional CMOS image sensors generally use PN photodiodes or PPDs as the photosensitive element, which are formed based on N-well/P-type substrates using the LV-CMOS process. The PIN photosensitive element has small junction capacitance and high quantum efficiency. By using High-Voltage CMOS(HV-CMOS), monolithic integration of CMOS circuits with PIN photodiodes can be achieved. In this paper, the relationship between the photo-response characteristics, NEP of CMOS detectors and pixel size and reset voltage are studied. The results show that the pixel charge gain can be increased by about one order of magnitude when the photosensitive element is changed from PN to PIN and the transient charge gain of the pixel is larger than 1/Cpd. This is closely related to the size of the diode and reset voltage. It is found that small pixels are more suitable for fast detection of short integration time under weak signals because of their higher charge gain and lower equivalent noise. If combined with microlenses, small pixels can be further advantageous in low light detection.

     

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