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HAN Ren-jie, HUANG Chen, ZHENG Chang-bin, WANG Jia-min, SUN Jun-jie, CHEN Yi, YU Jing-hua, ZHANG Yi-wen, ZHANG Xin, ZHAO Zhen, CHEN Fei. Study on the effect of 1064 nm/532 nm picosecond laser on visible light CCD interference and damage[J]. Chinese Optics. doi: 10.37188/CO.2025-0116
Citation: HAN Ren-jie, HUANG Chen, ZHENG Chang-bin, WANG Jia-min, SUN Jun-jie, CHEN Yi, YU Jing-hua, ZHANG Yi-wen, ZHANG Xin, ZHAO Zhen, CHEN Fei. Study on the effect of 1064 nm/532 nm picosecond laser on visible light CCD interference and damage[J]. Chinese Optics. doi: 10.37188/CO.2025-0116

Study on the effect of 1064 nm/532 nm picosecond laser on visible light CCD interference and damage

cstr: 32171.14.CO.2025-0116
Funds:  Supported by National Natural Science Foundation of China (No. 62405311); the Strategic Priority Research Program of the Chinese Academy of Sciences, Grant (No. XDA0380200)
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  • With the rapid development of short-pulse laser technology, the potential threats to CCD image sensors exhibit new characteristics distinct from those induced by traditional continuous-wave or long-pulse laser. To investigate the mechanisms and principles of interference and damage caused by short-pulse laser of different wavelengths, picosecond laser with wavelengths of 1064 nm and 532 nm, a pulse width of 30 ps, and a repetition rate of 1 Hz were employed to irradiate visible-light CCD in interference and damage experiments. The irradiation effects at different interference and damage stages of the CCD were characterized using optical microscopy and the its own imaging response. The mechanisms of short-pulse laser-induced interference and damage were analyzed, and the imaging response, microscopic morphology, and thresholds at various stages were compared for the two wavelengths. The results indicate that, for visible-light CCD, the 532 nm laser possesses stronger penetration capability through the microlens layer than the 1064 nm laser, and its interference threshold is 1–2 orders of magnitude lower. The point and line-damage thresholds induced by the 532 nm laser are approximately 2 orders of magnitude lower than those induced by the 1064 nm laser.

     

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