| Citation: | CHENG Yan-ling, DU Ling-yan, YIN Jie, CHEN Fu-song, XU Shun-yang. Effect of picosecond laser energy density on the photoelectric properties of se-doped silicon[J]. Chinese Optics. doi: 10.37188/CO.2026-0103
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The near-infrared optical absorption and photoresponse of silicon-based optoelectronic devices are intrinsically limited by the bandgap of silicon. Picosecond laser-induced Se doping combined with surface micro/nanostructuring provides an effective approach to enhancing the near-infrared performance of silicon. Among the relevant processing parameters, laser energy density plays a critical role in governing microstructure evolution and dopant redistribution, thereby strongly influencing device performance. In this study, single-crystal silicon substrates coated with a Se film were irradiated using a picosecond laser at energy densities of 0.85, 1.40, and 1.71 kJ/m2. Se-doped N+−N silicon photodiodes were subsequently fabricated to systematically investigate the effects of laser energy density on surface micro/nanostructure, optical absorptance, and photoelectric performance. The results show that the overall crystalline structure of the samples remains well preserved under all processing conditions, whereas their surface microstructures differ markedly. These structural variations further affect the optical absorption and device photoresponse. At an energy density of 1.40 kJ/m2, the sample exhibits the most uniform surface micro/nanostructure. Optical and electrical measurements show that its near-infrared absorptance exceeds 60%, while the corresponding photodiode achieves a responsivity of 2.28 A/W at a reverse bias of −6 V under
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