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Chinese Optics  > 2025  > Accepted Manuscript
SANG Xi-en, WANG Fang, LIU Jun-jie, LIU Yu-huai. Enhanced performance in AlGaN deep-ultraviolet laser diodes without an electron blocking layer by using a thin undoped Al0.8Ga0.2N strip layer structure[J]. Chinese Optics. doi: 10.37188/CO.EN-2025-0033
Citation: SANG Xi-en, WANG Fang, LIU Jun-jie, LIU Yu-huai. Enhanced performance in AlGaN deep-ultraviolet laser diodes without an electron blocking layer by using a thin undoped Al0.8Ga0.2N strip layer structure[J]. Chinese Optics. doi: 10.37188/CO.EN-2025-0033
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Enhanced performance in AlGaN deep-ultraviolet laser diodes without an electron blocking layer by using a thin undoped Al0.8Ga0.2N strip layer structure

cstr: 32171.14.CO.EN-2025-0033
  • 1.

    National Center for International Joint Research of Electronic Materials and Systems, International Joint-Laboratory of Electronic Materials and Systems of Henan Province, School of Electrical and Information Engineering, Zhengzhou University, Zhengzhou, Henan 450001, P. R. China

  • 2.

    Institute of Intelligence Sensing, Zhengzhou University, Zhengzhou, Henan 450001, P. R. China

  • 3.

    Research Institute of Industrial Technology Co. Ltd., Zhengzhou University, Zhengzhou, Henan 450001, P. R. China

  • 4.

    Zhengzhou Way Do Electronics Co. Ltd., Zhengzhou, Henan 450001, P. R. China

  • 5.

    School of Electrical and Information Engineering, North Minzu University, Yinchuan, Ningxia 750001, P. R. China

Funds:  Supported by National Nature Science Foundation of China (No. 62174148); National Key Research and Development Program (NKRDP Grant No. 2022YFE0112000); Key Program for International Joint Research of Henan Province (No. 231111520300).
More Information
  • Author Bio:

    SANG Xi-en (1999—), Male, Zhumadian, Henan Province, Ph.D. enrolled in Zhengzhou University University for Ph.D. in 2024, mainly engaged in the research of nitride semiconductor devices and materials. E-mail: zzuxien@163.com

    LIU Yu-huai (1969—), Male, Fuyang, Anhui, Ph.D., Professor, Ph.D. Supervisor, joined Zhengzhou University in 2011, worked in Japan from nitride semiconductor materials and devices research and product development for more than ten years. His research interests include the core technology of nitride semiconductor-based blue LEDs and LDs, UV LEDs, IR LDs and HBTs, HEMTs and other devices. E-mail: ieyhliu@zzu.edu.cn

  • Corresponding author: iefwang@zzu.edu.cn; ieyhliu@zzu.edu.cn
  • Received Date: 16 Jun 2025
  • Accepted Date: 01 Sep 2025
    • Available Online: 20 Sep 2025
    Abstract

  • AlGaN-based deep-ultraviolet (DUV) laser diodes (LDs) face performance challenges due to electron leakage and poor hole injection, often worsened by polarization effects from conventional electron blocking layers (EBLs). To overcome these limitations, we propose an EBL-free DUV LD design incorporating a 1-nm undoped Al0.8Ga0.2N thin strip layer after the last quantum barrier. Using PICS3D simulations, we evaluate the optical and electrical characteristics. Results show a significant increase in effective electron barrier height (from 158.2 meV to 420.7 meV) and a reduction in hole barrier height (from 149.2 meV to 62.8 meV), which enhance carrier injection and reduce leakage. The optimized structure (LD3) achieves a 14% increase in output power, improved slope efficiency (1.85 W/A), and lower threshold current. This design also reduces the quantum confined Stark effect and forms dual hole accumulation regions, improving recombination efficiency. Our findings present a promising approach for high-performance, EBL-free DUV LDs suitable for high-power applications.

     

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