| Citation: | YANG Xu-dong, JIA Wei, XIAO Yan-qing, WANG Xia-long, LI Tian-bao, ZHAI Guang-mei, DONG Hai-liang, XU Bing-she. Fabrication and ultraviolet detection performance of ZnO NRs/Porous GaN heterojunction[J]. Chinese Optics. doi: 10.37188/CO.EN-2026-0016
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Owing to the limited interfacial contact area, insufficient carrier transport efficiency, and the adverse effects of intrinsic defects in ZnO on photoresponse, further improvement in the performance of conventional ZnO/GaN heterojunction ultraviolet photodetectors remains restricted. To address these issues, Ga+Al co-doped ZnO nanorod arrays with different Ga doping concentrations were grown on porous p-GaN/Al2O3 substrates by a low-temperature hydrothermal method, and the corresponding Ga+Al co-doped ZnO nanorod/porous GaN heterojunctions were fabricated. The porous p-GaN structure was used to enhance heterojunction interfacial contact and light absorption, while Ga+Al co-doping was employed to regulate the defect states and carrier transport properties of ZnO nanorods, thereby improving the self-powered ultraviolet photodetection performance of the devices. The findings of the study demonstrated that under 365 nm ultraviolet illumination at 0 V bias, the device with a Ga doping concentration of 3 at.% exhibited the best UV photodetection performance, with a light/dark current ratio of
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