| Citation: | YANG Xu-dong, JIA Wei, XIAO Yan-qing, WANG Xia-long, LI Tian-bao, ZHAI Guang-mei, DONG Hai-liang, XU Bing-she. Fabrication and ultraviolet detection performance of ZnO NRs/Porous GaN heterojunction[J]. Chinese Optics. doi: 10.3724/CO.EN-2026-0016
|
Owing to the limited interfacial contact area, insufficient carrier transport efficiency, and the adverse effects of intrinsic defects in ZnO on photoresponse, further improvement in the performance of conventional ZnO/GaN heterojunction ultraviolet photodetectors remains restricted. To address these issues, Ga+Al co-doped ZnO nanorod arrays with different Ga doping concentrations were grown on porous p-GaN/Al2O3 substrates by a low-temperature hydrothermal method, and the corresponding Ga+Al co-doped ZnO nanorod/porous GaN heterojunctions were fabricated. The porous p-GaN structure was used to enhance heterojunction interfacial contact and light absorption, while Ga+Al co-doping was employed to regulate the defect states and carrier transport properties of ZnO nanorods, thereby improving the self-powered ultraviolet photodetection performance of the devices. The findings of the study demonstrated that under 365 nm ultraviolet illumination at 0 V bias, the device with a Ga doping concentration of 3% exhibited the best UV photodetection performance, with a light/dark current ratio of
| [1] |
LIN H W, JIANG A, XING·SH B, et al. Advances in self-powered ultraviolet photodetectors based on P-N heterojunction low-dimensional nanostructures[J]. Nanomaterials, 2022, 12(6): 910. doi: 10.3390/nano12060910
|
| [2] |
HOU X H, ZHAO X L, ZHANG Y, et al. High-performance harsh-environment-resistant GaOx solar-blind photodetectors via defect and doping engineering[J]. Advanced Materials, 2022, 34: 2106923. doi: 10.1002/adma.202106923
|
| [3] |
XIE Y L, WAN P, JIANG M M, et al. Performance enhancement of a self-biased n-ZnO microwire/p-GaN heterojunction ultraviolet photodetector incorporating Ag nanowires[J]. CrystEngComm, 2022, 24: 7727-7738. doi: 10.1039/D2CE01084D
|
| [4] |
CAO F, LIU Y, LIU M, et al. Wide bandgap semiconductors for ultraviolet photodetectors: approaches, applications, and prospects[J]. Research, 2024, 7: 0385. doi: 10.34133/research.0385
|
| [5] |
XIAO Y, LIU L, MA ZH H, et al. High-performance self-powered ultraviolet photodetector based on Nano-porous GaN and CoPc p-n vertical heterojunction[J]. Nanomaterials, 2019, 9(9): 1198. doi: 10.3390/nano9091198
|
| [6] |
JIA K D, JIA W, LI T B, et al. Fabrication of porous CuxZn1-xS/GaN heterojunctions for ultraviolet photodetector application[J]. Optical Materials, 2025, 162: 116881. doi: 10.1016/j.optmat.2025.116881
|
| [7] |
WEN J J, WANG Y K, ZHANG B, et al. High-performance ultraviolet photodetectors based on nanoporous GaN with a Ga2O3 single-crystal layer[J]. Nanomaterials, 2024, 14(13): 1165. doi: 10.3390/nano14131165
|
| [8] |
CUI J SH, ZHOU J P, CHEN H M, et al. Effect of ultraviolet and room lights on porous GaN films using photo-assisted electrochemical etching[J]. Materials Letters, 2021, 301: 130287. doi: 10.1016/j.matlet.2021.130287
|
| [9] |
CHEN C H, CHANG S J, SU Y K, et al. Vertical high quality mirrorlike facet of GaN-based device by reactive ion etching[J]. Japanese Journal of Applied Physics, 2001, 40: 2762-2764. doi: 10.1143/JJAP.40.2762
|
| [10] |
ZHANG L, WANG SH ZH, SHAO Y L, et al. One-step fabrication of porous GaN crystal membrane and its application in energy storage[J]. Scientific Reports, 2017, 7: 44063. doi: 10.1038/srep44063
|
| [11] |
CHEN R R, LIU J, FENG B, et al. Pores in p-type GaN by annealing under nitrogen atmosphere: formation and photodetector[J]. Journal of Materials Science, 2022, 57(1): 467-476. doi: 10.1007/s10853-021-06632-4
|
| [12] |
MENG R L, JI X L, LOU ZH, et al. High-performance nanoporous-GaN metal-insulator-semiconductor ultraviolet photodetectors with a thermal oxidized β-Ga2O3 layer[J]. Optics Letters, 2019, 44(9): 2197-2200. doi: 10.1364/OL.44.002197
|
| [13] |
YU R X, WANG G D, SHAO Y L, et al. From bulk to porous GaN crystal: precise structural control and its application in ultraviolet photodetectors[J]. Journal of Materials Chemistry C, 2019, 7(45): 14116-14122. doi: 10.1039/C9TC04820K
|
| [14] |
PU T F, YOUNIS U, CHIU H C, et al. Review of recent progress on vertical GaN-based PN diodes[J]. Nanoscale Research Letters, 2021, 16: 101. doi: 10.1186/s11671-021-03554-7
|
| [15] |
NOMOTO K, SONG B, HU Z Y, et al. 1.7-kV and 0.55 mΩ·cm2 GaN p-n diodes on bulk GaN substrates with avalanche capability[J]. IEEE Electron Device Letters, 2016, 37(2): 161-164. doi: 10.1109/LED.2015.2506638
|
| [16] |
GUO Y, SUN Y M, SONG W D. Narrowband near-ultraviolet photodetector fabricated from porous GaN/CuZnS heterojunction[J]. Acta Physica Sinica, 2022, 71(21): 218501. doi: 10.7498/aps.71.20220990
|
| [17] |
VARSHNEY U, SHARMA A, VASHISHTHA P, et al. Ga2O3/GaN heterointerface-based self-driven broad-band ultraviolet photodetectors with high responsivity[J]. ACS Applied Electronic Materials, 2022, 4(11): 5641-5651. doi: 10.1021/acsaelm.2c01362
|
| [18] |
ZHANG J T, TANG K, WEI T CH, et al. High-photosensitive ultraviolet photodetector based on an n-ZnO microwire/p-InGaN heterojunction[J]. Physica E: Low-dimensional Systems and Nanostructures, 2023, 146: 115562. doi: 10.1016/j.physe.2022.115562
|
| [19] |
JIN Y M, JIAO SH, WANG D B, et al. Enhanced UV photoresponsivity of ZnO nanorods decorated with Ag2S/ZnS nanoparticles by successive ionic layer adsorption and reaction method[J]. Nanomaterials, 2021, 11(2): 461. doi: 10.3390/nano11020461
|
| [20] |
BAKRY M, ISMAIL W, ABDELFATAH M, et al. Low-cost fabrication methods of ZnO nanorods and their physical and photoelectrochemical properties for optoelectronic applications[J]. Scientific Reports, 2024, 14: 23788. doi: 10.1038/s41598-024-73352-5
|
| [21] |
HONG S K, KO H J, CHEN Y F, et al. Defect characterization in epitaxial ZnO/epi-GaN/Al2O3 heterostructures: transmission electron microscopy and triple-axis X-ray diffractometry[J]. Journal of Crystal Growth, 2000, 209(2-3): 537-541. doi: 10.1016/S0022-0248(99)00615-6
|
| [22] |
KAUR A, ARORA S, CHETRY P, et al. (0001)n-ZnO/(0001)p-GaN heterostructure based self-driven fast UV photodetectors and the role of the polarization induced interfacial 2D electron gas channel[J]. ACS Applied Electronic Materials, 2024, 6(9): 6619-6625. doi: 10.1021/acsaelm.4c01062
|
| [23] |
FAN ZH H, KUAI Y, XU Y T, et al. Self-assembly ZnO mesh and GaN heterojunction voltage sensitive ultraviolet photodetector[J]. Materials Today Communication, 2025, 42: 111452. doi: 10.1016/j.mtcomm.2024.111452
|
| [24] |
CABRAL L, LOPEZ RICHARD V, DA SILVA J L F, et al. Insights into the nature of optically active defects of ZnO[J]. Journal of Luminescence, 2020, 227: 117536. doi: 10.1016/j.jlumin.2020.117536
|
| [25] |
YOUNG S J, YANG C C, LAI L T. Review-growth of Al-, Ga-, and In-doped ZnO nanostructures via a low-temperature process and their application to field emission devices and ultraviolet photosensors[J]. Journal of the Electrochemical Society, 2017, 164(5): B3013-B3028. doi: 10.1149/2.0051705jes
|
| [26] |
DING H R, PENG Y, CHEN M Q, et al. Improved detection performance of self-driven InZnO/p-GaN heterojunction UV photodetector by lanthanum doping[J]. Journal of Alloys and Compounds, 2023, 966: 171537. doi: 10.1016/j.jallcom.2023.171537
|
| [27] |
TSAY C Y, HSIAO I P, CHANG F Y, et al. Improving the photoelectrical characteristics of self-powered p-GaN film/n-ZnO nanowires heterojunction ultraviolet photodetectors through gallium and indium co-doping[J]. Materials Science in Semiconductor Processing, 2021, 121: 105295. doi: 10.1016/j.mssp.2020.105295
|
| [28] |
LUNG C, TOMA M, POP M, et al. Characterization of the structural and optical properties of ZnO thin films doped with Ga, Al and (Al+Ga)[J]. Journal of Alloys and Compounds, 2017, 725: 1238-1243. doi: 10.1016/j.jallcom.2017.07.265
|
| [29] |
LI R, YU CH Y, DONG H L, et al. Effects of GaxZn1-xO nanorods on the photoelectric properties of n-ZnO nanorods/p-GaN heterojunction light-emitting diodes[J]. RSC Advances, 2017, 7(78): 49613-49617. doi: 10.1039/C7RA09250D
|
| [30] |
SRIVASTAVA V, BABU E S, HONG S K. Effect of Al doping on the properties of ZnO nanorods synthesized by hydrothermal growth for gas sensor applications[J]. Korean Journal of Materials Research, 2020, 30(8): 399-405. doi: 10.3740/MRSK.2020.30.8.399
|
| [31] |
ALNAIM N, KUMAR S, ALSHOAIBI A. Structural, morphological, electronic structural, optical, and magnetic properties of ZnO nanostructures[J]. Materials, 2022, 15(24): 8889. doi: 10.3390/ma15248889
|
| [32] |
TSAY C Y, LEE W C. Effect of dopants on the structural, optical and electrical properties of sol-gel derived ZnO semiconductor thin films[J]. Current Applied Physics, 2013, 13(1): 60-65. doi: 10.1016/j.cap.2012.06.010
|
| [33] |
CHANG F M, BRAHMA S, HUANG J H, et al. Strong correlation between optical properties and mechanism in deficiency of normalized self-assembly ZnO nanorods[J]. Scientific Reports, 2019, 9: 905. doi: 10.1038/s41598-018-37601-8
|
| [34] |
JIA W, REN H L, LI T B, et al. Fabrication of porous Ga2O3/GaN heterojunction for ultraviolet photodetector application[J]. Optics Express, 2025, 33(9): 18993-19003. doi: 10.1364/OE.561140
|
| [35] |
LV Z X, YAN SH Q, MU W X, et al. A high responsivity and photosensitivity self-powered UV photodetector constructed by the CuZnS/Ga2O3 heterojunction[J]. Advanced Materials Interfaces, 2023, 10(5): 2202130. doi: 10.1002/admi.202202130
|
| [36] |
LI SH, ZHI Y S, LU CH, et al. Broadband ultraviolet self-powered photodetector constructed on exfoliated β-Ga2O3/CuI core-shell microwire heterojunction with superior reliability[J]. The Journal of Physical Chemistry Letters, 2021, 12(1): 447-453. doi: 10.1021/acs.jpclett.0c03382
|
| [37] |
LI SH, YUE J Y, JI X Q, et al. Oxygen vacancies modulating the photodetector performances in ε-Ga2O3 thin films[J]. J. Mater. Chem. C, 2021, 9(16): 5437-5444. doi: 10.1039/D1TC00616A
|
| [38] |
LI SH, YUE J Y, YAN Z Y, et al. Enhancing the self-powered performance in VOx/Ga2O3 heterojunction ultraviolet photodetector by hole-transport engineering[J]. Journal of Alloys and Compounds, 2022, 902: 163801. doi: 10.1016/j.jallcom.2022.163801
|
| [39] |
MISHRA M, GUNDIMEDA A, GARG T, et al. ZnO/GaN heterojunction based self-powered photodetectors: influence of interfacial states on UV sensing[J]. Applied Surface Science, 2019, 478: 1081-1089. doi: 10.1016/j.apsusc.2019.01.192
|
| [40] |
YANG L, ZHOU H, XUE M N, et al. A self-powered, visible-blind ultraviolet photodetector based on n-Ga: ZnO nanorods/p-GaN heterojunction[J]. Sensors and Actuators A: Physical, 2017, 267: 76-81. doi: 10.1016/j.sna.2017.08.007
|
Figures(7) / Tables(1)
DownLoad:
