激光等离子体极紫外光刻光源

窦银萍; 孙长凯; 林景全

doi:10.3788/CO.20130601.0020

激光等离子体极紫外光刻光源

doi: 10.3788/CO.20130601.0020

长春理工大学理学院, 吉林长春 130022

基金项目:

国家自然科学基金资助项目(No.61178022);吉林省科技厅资助项目(No.20111812)

详细信息

作者简介:
窦银萍 (1987—) ,女,吉林长春人,博士研究生,2010年于长春理工大学获得学士学位,主要从事激光等离子体极紫外光刻光源方面的研究。E-mail:douzi714@126.com;孙长凯(1979—),男,辽宁辽阳人,博士,讲师,2002年于辽宁师范大学获得学士学位,2005年、2010年于吉林大学分别获得硕士、博士学位,主要从事量子相干控制,激光等离子体极紫外光刻光源等方面的研究。E-mail:changkaisun@cust.edu.cn;林景全(1966—),男,吉林人,博士,教授,博士生导师,1999年于中国科学院长春光学精密机械与物理研究所获得博士学位,主要从事飞秒激光与物质相互作用、极紫外光刻关键技术、光辐射电子显微术等方面的研究。E-mail: linjingquan@cust.edu.cn

窦银萍 (1987—) ,女,吉林长春人,博士研究生,2010年于长春理工大学获得学士学位,主要从事激光等离子体极紫外光刻光源方面的研究。E-mail:douzi714@126.com;孙长凯(1979—),男,辽宁辽阳人,博士,讲师,2002年于辽宁师范大学获得学士学位,2005年、2010年于吉林大学分别获得硕士、博士学位,主要从事量子相干控制,激光等离子体极紫外光刻光源等方面的研究。E-mail:changkaisun@cust.edu.cn;林景全(1966—),男,吉林人,博士,教授,博士生导师,1999年于中国科学院长春光学精密机械与物理研究所获得博士学位,主要从事飞秒激光与物质相互作用、极紫外光刻关键技术、光辐射电子显微术等方面的研究。E-mail: linjingquan@cust.edu.cn

窦银萍 (1987—) ,女,吉林长春人,博士研究生,2010年于长春理工大学获得学士学位,主要从事激光等离子体极紫外光刻光源方面的研究。E-mail:douzi714@126.com;孙长凯(1979—),男,辽宁辽阳人,博士,讲师,2002年于辽宁师范大学获得学士学位,2005年、2010年于吉林大学分别获得硕士、博士学位,主要从事量子相干控制,激光等离子体极紫外光刻光源等方面的研究。E-mail:changkaisun@cust.edu.cn;林景全(1966—),男,吉林人,博士,教授,博士生导师,1999年于中国科学院长春光学精密机械与物理研究所获得博士学位,主要从事飞秒激光与物质相互作用、极紫外光刻关键技术、光辐射电子显微术等方面的研究。E-mail: linjingquan@cust.edu.cn

通讯作者:
林景全

中图分类号: TN305.7;O539
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出版历程
- 收稿日期: 2012-10-11
- 修回日期: 2012-12-13
- 刊出日期: 2013-02-10

Laser-produced plasma light source for extreme ultraviolet lithography

College of Science, Changchun University of Science and Technology, Changchun 130022, China

摘要

摘要: 研究并讨论了下一代光刻的核心技术之一激光等离子体极紫外光刻光源。简要介绍了欧美和日本等国极紫外光刻技术的发展概况,分析了新兴的下一代13.5 nm极紫外光刻光源的现状,特别讨论了国内外激光等离子体极紫外光刻光源的现状,指出目前其存在的主要问题是如何提高光源的转化效率和减少光源的碎屑。文中同时概述了6.x nm(6.5~6.7 nm)极紫外光刻光源的最新研究工作。最后,介绍了作者所在研究小组近年来在极紫外光源和极紫外光刻掩模缺陷检测方面开展的研究工作。
- 极紫外光刻 /
- 激光等离子体 /
- 极紫外光源 /
- 转换效率
Abstract: Laser-produced Plasma(LPP) Extreme Ultraviolet Lithography(EUVL) light source, one of the core technologies of next generation lithography, is discussed. A brief review to the development situation of lithography technology in Europe, America and Japan is given. Being a newly arisen research direction, the status of next generation 13.5 nm EUVL source is analyzed, and especially the research on EUVL source based upon LPP at home and abroad is described and analyzed in detail. It points out that the main problems for the EUVL are how to improve the conversion efficiency of EUV light and how to reduce the light debris. Furthermore, the latest research status on the EUVL source at 6.7 nm is also presented. Finally, it introduces the research work of the author's group on EUVL light sources and the detection of mask defect for EUVL.
- Extreme Ultraviolet Lithography(EUVL) /
- Laser-produced Plasma(LPP) /
- Extreme Ultraviolet(EUV) source /
- Conversion Efficiency(CE)

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参考文献(1)

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