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环境友好半导体Mg2Si薄膜的研究进展

赵珂杰 谢泉 肖清泉 余志强

赵珂杰, 谢泉, 肖清泉, 余志强. 环境友好半导体Mg2Si薄膜的研究进展[J]. 中国光学(中英文), 2010, 3(5): 446-451.
引用本文: 赵珂杰, 谢泉, 肖清泉, 余志强. 环境友好半导体Mg2Si薄膜的研究进展[J]. 中国光学(中英文), 2010, 3(5): 446-451.
ZHAO Ke-jie, XIE Quan, XIAO Qing-quan, YU Zhi-qiang. Study on semiconductor Mg2Si thin films[J]. Chinese Optics, 2010, 3(5): 446-451.
Citation: ZHAO Ke-jie, XIE Quan, XIAO Qing-quan, YU Zhi-qiang. Study on semiconductor Mg2Si thin films[J]. Chinese Optics, 2010, 3(5): 446-451.

环境友好半导体Mg2Si薄膜的研究进展

基金项目: 

国家自然科学基金资助项目(No.6076602);科技部国际合作专项资助项目(No.2008DFA52210 );贵州省信息产业厅资助项目(No.0831)

详细信息
    作者简介:

    赵珂杰(1983—),男,河北石家庄人,硕士,主要从事新型电子功能材料的研究。E-mail:kejie8308@163.com
    谢 泉(1964—),男,湖南邵阳人,教授,博士生导师,主要从事新型电子功能材料的研究。 E-mail:qxie@gzu.edu.cn

  • 中图分类号: TN304.2; TN304.055

Study on semiconductor Mg2Si thin films

  • 摘要: 介绍了近年来Mg2Si薄膜的研究进展。从Mg2Si材料的晶体结构出发,重点对Mg2Si薄膜的基本性质、制备方法和应用前景进行了论述。研究表明,Mg2Si是一种窄带隙间接半导体材料,在光电和热电领域都具有较好的应用价值,因其兼具了组成元素地层含量丰富、无毒、无污染等优点,被视为是一种新型的环境友好半导体材料。在Mg2Si薄膜的外延生长技术方面,目前比较成熟的方法有分子束外延、脉冲激光沉积、反应扩散等多种,但普遍存在制备条件较苛刻,成膜质量不高等缺点。最后,对目前存在的问题及未来的研究动向做了简要讨论。

     

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出版历程
  • 收稿日期:  2010-03-11
  • 修回日期:  2010-05-13
  • 刊出日期:  2010-10-25

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