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极紫外投影光刻光学系统

王丽萍

王丽萍. 极紫外投影光刻光学系统[J]. 中国光学(中英文), 2010, 3(5): 452-461.
引用本文: 王丽萍. 极紫外投影光刻光学系统[J]. 中国光学(中英文), 2010, 3(5): 452-461.
WANG Li-ping. Optical system of extreme ultraviolet lithography[J]. Chinese Optics, 2010, 3(5): 452-461.
Citation: WANG Li-ping. Optical system of extreme ultraviolet lithography[J]. Chinese Optics, 2010, 3(5): 452-461.

极紫外投影光刻光学系统

基金项目: 

国家重大科技专项支持课题

详细信息
    作者简介:

    王丽萍(1981—),女,吉林长春人,助理研究员,主要从事光学系统设计方面的研究。 E-mail:wlp8121@126.com

  • 中图分类号: TN305.7

Optical system of extreme ultraviolet lithography

  • 摘要: 极紫外光刻(EUVL)是半导体工业实现32~16 nm技术节点的候选技术,而极紫外曝光光学系统是EUVL的核心部件,它主要由照明系统和微缩投影物镜组成。本文介绍了国内外现有的EUVL实验样机及其系统参数特性;总结了EUVL光学系统设计原则,分别综述了EUVL投影光学系统和照明光学系统的设计要求;描述了EUVL投影曝光系统及照明系统的设计方法;重点讨论了适用于22 nm节点的EUVL非球面六镜投影光学系统,指出了改善EUVL照明均匀性的方法。

     

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出版历程
  • 收稿日期:  2010-05-17
  • 修回日期:  2010-07-25
  • 刊出日期:  2010-10-25

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