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不同气体环境下532 nm激光诱导硅表面形貌的研究

杨宏道 李晓红 李国强 袁春华 邱荣

杨宏道, 李晓红, 李国强, 袁春华, 邱荣. 不同气体环境下532 nm激光诱导硅表面形貌的研究[J]. 中国光学(中英文), 2011, 4(1): 86-92.
引用本文: 杨宏道, 李晓红, 李国强, 袁春华, 邱荣. 不同气体环境下532 nm激光诱导硅表面形貌的研究[J]. 中国光学(中英文), 2011, 4(1): 86-92.
YANG Hong-dao, LI Xiao-hong, LI Guo-qiang, YUAN Chun-hua, QIU Rong. Surface morphology of silicon induced by 532 nm nanosecond laser under different ambient atmospheres[J]. Chinese Optics, 2011, 4(1): 86-92.
Citation: YANG Hong-dao, LI Xiao-hong, LI Guo-qiang, YUAN Chun-hua, QIU Rong. Surface morphology of silicon induced by 532 nm nanosecond laser under different ambient atmospheres[J]. Chinese Optics, 2011, 4(1): 86-92.

不同气体环境下532 nm激光诱导硅表面形貌的研究

基金项目: 

四川省教育厅资助科研项目(No.08ZB006和No.09ZA128);西南科技大学博士研究基金资助项目(No.06ZX7113)

详细信息
    作者简介:

    杨宏道(1984—),男,山西运城人,硕士研究生,主要从事激光与物质的相互作用方面的研究。 E-mail:yanghongdao2006@163.com 李晓红(1977—),女,甘肃泾川人,博士后,副研究员,主要从事激光与物质相互作用方面的研究。 E-mail:li_xh1125@yahoo.com.cn

    杨宏道(1984—),男,山西运城人,硕士研究生,主要从事激光与物质的相互作用方面的研究。 E-mail:yanghongdao2006@163.com 李晓红(1977—),女,甘肃泾川人,博士后,副研究员,主要从事激光与物质相互作用方面的研究。 E-mail:li_xh1125@yahoo.com.cn

  • 中图分类号: TN249

Surface morphology of silicon induced by 532 nm nanosecond laser under different ambient atmospheres

  • 摘要: 研究了在不同气体环境下,利用532 nm Nd∶ YAG纳秒脉冲激光累积辐照单晶硅表面形成的微结构,结果表明,在其他条件相同,背景气体不同的情况下,背景气体对硅表面形貌的形成起着重要的作用。具体分析了真空、N2和SF6 3种环境气氛下形成的微结构,结果显示,在SF6中形成的锥形微结构的数密度比在N2和真空中的大,并且锥形具有更大的纵横比;在N2、真空和SF6中形成的微结构尺寸依次减小。SF6气氛下,激光辅助化学刻蚀的效率比在真空和N2气氛中的高。另外,辐照区域边缘有波纹微结构形成,分析认为,该微结构的形成是由表面张力波的冷却导致的。

     

  • [1] BIRNBAUM M. Semiconductor surface damage produced by ruby lasers[J]. J. Appl. Phys.,1965,36:3688-3689. [2] van DRIEL H M,SIPE J E,YOUNG J F. Laser-induced periodic surface structure on solids:a universal phenonmenon[J]. Phys. Rev. Lett.,1982,49(26):1955-1958. [3] CRAWFORD T H R,HAUGEN H K. Sub-wavelength surface structures on silicon irradiated by femtosecond laser pulses at 1300 and 2100 nm wavelengths[J]. Appl. Surf. Sci.,2007,253:4970-4977. [4] YOUNG J F,PRESTON J S,van DRIEL H M,et al.. Laser-induced periodic surface structure. II. experiments on Ge, Si, Al, and brass[J]. Phys. Rev. B,1983,27(2):1155-1172. [5] YONG J E,SIPE J E,van DRIEL H M. Laser-induced periodic surface structure. III. Fluence regimes,the role of feedback,and details of the induced topography in germanium[J]. Phys. Rev. B,1984,30(4):2001-2015. [6] 戴玉堂,徐刚,崔健磊, 等 .GaN基半导体材料的157 nm激光微刻蚀[J]. 中国激光 ,2009,36(12):3138-3142. DAI Y T,XU G,CUI J L,et al.. Micro etching of GaN-based semiconductor materials using 157 nm laser[J]. Chinese J. Lasers,2009,36(12):3138-3142.(in Chinese) [7] 石岩,张宏,徐春鹰.铜基粉末冶金摩擦材料激光表面改性处理[J]. 中国激光 ,2009,36(5):1246-1250. SHI Y,ZHANG H,XU CH Y. Laser surface modification of copper-based powder metallurgy friction materials[J]. Chinese J. Lasers,2009,36(5):1246-1250.(in Chinese) [8] 虞钢,王恒海,何秀丽.具有特定光强分布的激光表面硬化技术[J]. 中国激光 ,2009,36(2):480-486. YU G,WANG H H,HE X L. Laser surface hardening using determined intensity distribution[J]. Chinese J. Lasers,2009,36(2):1688-1691.(in Chinese) [9] HER T H,FINLAY R J,WU C,et al.. Microstructuring of silicon with femtosecond laser pulses[J]. Appl. Phys. Lett.,1998,73(12):1673-1675. [10] YOUNKIN R,CAREY J E,MAZUR E,et al.. Infrared absorption by conical silicon microstructures made in a variety of background gases using femtosecond-laser pulses[J]. J. Appl. Phys.,2003,93 (5):2626-2629. [11] 李平,王 煜,冯国进, 等 . 超短激光脉冲对硅表面微构造的研究[J]. 中国激光 ,2006,33(12):1688-1691. LI P,WANG Y,FENG G J,et al.. Study of silicon micro-structuring using ultra-short laser pulses[J]. Chinese J. Lasers,2006,33(12):1688-1691.(in Chinese) [12] CROUCH C H,CAREY J E,SHEN M,et al.. Infrared absorption by sulfur-doped silicon formed by femtosecond laser irradiation[J]. Appl. Phys. A,2004,79:1635-1641. [13] KARABUTOV A V,SHAFEEV G A,BADI N,et al.. 3D periodic structures grown on silicon by radiation of a pulsed Nd∶ YAG laser and their field emission properties[J]. Appl. Surf. Sci.,2006,252:4453-4456. [14] CROUCH C H,CAREY J E,WARRENDER J M,et al.. Comparison of structure and properties of femtosecond and nanosecond laser structured silicon[J]. Appl. Phys. Lett.,2004,84(11):1850-1852. [15] JIMNEZ-JARQUN J,HARO-PONIATOWSKI E,FERNNADEZ-GUASTI M,et al.. Laser induced micro-structuring of silicon under different atmospheres[J]. Radiat Eff. Defects Solids,2009,164(7-8):443-451. [16] PEDRAZA A J,FOWLKES J D,LOWNDES D H. Silicon microcolumn arrays grown by nanosecond pulsed-excimer laser irradiation[J]. Appl. Phys. Lett.,1999,74(16):2322-2324. [17] CHUANG T J. Multiple photo excited SF6 interaction with silicon surfaces[J]. J. Chem. Phys.,1981,74 (2):1453-1460. [18] SAJAD B,PARVIN P,BASSAM M. SF6 decomposition and layer formation due to excimer laser photoablation of SiO2 surface at gas-solid system[J]. J. Phys. D:Appl. Phys.,2004,37:3402-3408. [19] LOWNDES D H,FOWLKES J D,PEDRAZA A J. Early stages of pulsed-laser growth of silicon microcolumns and microcones in air and SF6[J]. Appl. Surf. Sci.,2000,154-155:647-658. [20] DOLGAEV S I,LAVRISHEV S V,LYALIN A A,et al.. Formation of conical microstructures upon laser evaporation of solids[J]. Appl. Phys. A,2001,73:177-181. [21] EMEL'YANOV V I,BABAK D V. Defect capture under rapid solidication of the melt induced by the action of femtosecond laser pulses and formation of periodic surface structures on a semiconductor surface[J]. Appl. Phys. A,2002,74:797-805. [22] BLOEMBERGEN N. Fundaments of laser-solid interactions[J]. Conference on Laser Solid Interactions and Laser Processing. AIP Conf. Proc.,New York,1979,50:1-9. [23] JANNITTI E,MALVEZZI A M,TONODELLO G. Analysis of the radiation backscattered from a laser-produced plasma[J]. J. Appl. Phys.,1975,46 (7):3096-3101.
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出版历程
  • 收稿日期:  2010-08-11
  • 修回日期:  2010-10-13
  • 刊出日期:  2011-02-25

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