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古新安, 朱韦臻, 罗志伟, ANDREEV Y M, LANSKII G V, SHAIDUKO A V, IZAAK T I, SVETLICHNYI V A, VAYTULEVICH E A, ZUEV V V. 掺碲硒化镓晶体的光学性能[J]. 中国光学, 2011, 4(6): 660-666.
引用本文: 古新安, 朱韦臻, 罗志伟, ANDREEV Y M, LANSKII G V, SHAIDUKO A V, IZAAK T I, SVETLICHNYI V A, VAYTULEVICH E A, ZUEV V V. 掺碲硒化镓晶体的光学性能[J]. 中国光学, 2011, 4(6): 660-666.
KU Shin-an, CHU Wei-chen, LUO Chih-wei, ANDREEV Y M, LANSKII G V, SHAIDUKO A V, IZAAK T I, SVETLICHNYI V A, VAYTULEVICH E A, ZUEV V V. Optical properties of Te-doped GaSe crystal[J]. Chinese Optics, 2011, 4(6): 660-666.
Citation: KU Shin-an, CHU Wei-chen, LUO Chih-wei, ANDREEV Y M, LANSKII G V, SHAIDUKO A V, IZAAK T I, SVETLICHNYI V A, VAYTULEVICH E A, ZUEV V V. Optical properties of Te-doped GaSe crystal[J]. Chinese Optics, 2011, 4(6): 660-666.

掺碲硒化镓晶体的光学性能

基金项目: 

supported by RFBR Project(No.10-02-01452-a), Presidium SB RAS under the Project VII.63.3.1 of VII.63.3 Prog. and Join Proj. between Presidium SB RAS and Presidium NAS, Belarus No.10 of 2010.

详细信息
  • 中图分类号: O734; TN304.2

Optical properties of Te-doped GaSe crystal

Funds: 

supported by RFBR Project(No.10-02-01452-a), Presidium SB RAS under the Project VII.63.3.1 of VII.63.3 Prog. and Join Proj. between Presidium SB RAS and Presidium NAS, Belarus No.10 of 2010.

More Information
    Author Bio:

    KU Shin-an(1985-), Post-graduate student, National Chiao Tung University, Taiwan, China. His research interests include nonlinear optics and THz spectroscopy. E-mail:ksa7471@hotmail.com CHU Wei-chen(1989-), Master Student, National Chiao Tung University, Taiwan, China. Her research interests include nonlinear optics and THz spectroscopy. E-mail:s.daffodil@hotmail.com

    KU Shin-an(1985-), Post-graduate student, National Chiao Tung University, Taiwan, China. His research interests include nonlinear optics and THz spectroscopy. E-mail:ksa7471@hotmail.com CHU Wei-chen(1989-), Master Student, National Chiao Tung University, Taiwan, China. Her research interests include nonlinear optics and THz spectroscopy. E-mail:s.daffodil@hotmail.com

  • 摘要: 采用水平区熔法生长了碲(Te)掺杂浓度(质量百分比)分别为0.05%,0.1%,0.5%,1%,2%的硒化镓(GaSe)晶体,并分别对掺杂浓度为0.01%,0.07%,0.38%,0.67%,2.07%的GaSe∶Te晶体的光学性能进行了表征。首次研究了GaSe∶Te晶体中刚性层声子模式的转换。吸收光谱测试结果表明:当Te掺杂浓度小于0.38%时,振动中心位于0.59 THz附近的E'(2)刚性模式吸收峰强度可达最大值,这一过程与GaSe∶Te晶体光学性能的提高密切相关。但Te掺杂浓度的进一步提高会导致E'(2)刚性模式吸收峰强度逐渐减弱,当Te掺杂浓度为1%时,E'(2)刚性模式吸收峰基本消失。这两个过程与GaSe∶Te晶体光学质量的下降密切相关。因此,E'(2)刚性模式吸收强度达到最高时对应的掺杂浓度即是GaSe∶Te晶体中Te的最佳掺杂浓度,光整流产生太赫兹过程证实了此结论的正确性。
  • [1] DMITRIEV V G,GURZADYAN G G,NIKOGOSYAN D N. Handbook for Nonlinear Optical Crystals[M]. 3rd ed. Berlin:Springer,1999. [2] LEE Y S. Principles of Terahertz Science and Technology[M]. Berlin:Springer,2008. [3] ALLAKHVERDIEV K R,GULIEV R I,SALAEV E Y,et al.. Investigation of linear and nonlinear optical properties of GaSxSe1-x crystals[J]. Sov. J. Quantum Electron.,1982,12:947-948. [4] SUHRE D R,SINGH N B,BALAKRISHNA V,et al.. Improved crystal quality and harmonic generation in GaSe doped with indium[J]. Opt. Lett.,1997,22:775-777. [5] SINGH N B,SUHRE D R,ROSCH W,et al.. Modified GaSe crystals for mid-IR applications[J]. J. Cryst. Growth,1999,198:588-592. [6] HSU Y K,CHEN C W,HUANG J Y,et al.. Erbium doped GaSe crystal for mid-IR applications[J]. Opt. Express,2006,14:5484-5491. [7] FENG Z S,KANG Z H,WU F G,et al.. SHG in doped GaSe∶In crystals[J]. Opt. Express,2008,16:9978-9985. [8] ZHANG H Z,KANG Z H,JIANG Y,et al.. SHG phase matching in GaSe and mixed GaSe1-xSx,x≤0.412, crystals at room temperature[J]. Opt. Express,2008,16:9951-9957. [9] RAK Z,MAHANTI S D,MANDAL K C,et al.. Doping dependence of electronic and mechanical properties of GaSe1-xTex and Ga1-xInxSe from first principles[J]. Phys. Rev. B,2010,82:155203. [10] SHI W,DING Y J. A monochromatic and high-power terahertz source tunable in the ranges of 2.7~38.4 and 58.2~3540 μm for variety of potential applications[J]. Appl. Phys. Lett.,2004,84:1635-1637. [11] DING Y J,SHI W. Widely tunable monochromatic THz sources based on phase-matched difference-frequency generation in nonlinear-optical crystals:a novel approach[J]. Laser Phys.,2006,16:562-570. [12] ATUCHIN V V,ANDREEV Y M,SARKISOV S Y,et al.. GaSe1-xSx crystals for terahertz frequency range[C]//10th Annual International Conference and Seminar on Micro/Nanotechnologies and Electron Devices(EDM 2009),July 1-6,2009,Novosibirsk Tomsk,Russia,2009:96-99. [13] ANDREEV Y M,BEREZNAYA S A,VINNIK E M,et al.. Optical properties of GaSe1-xSx in THz range[C]//Eight Siberian Conference on Climate and Ecological Monitoring,Oct 8-10,2009,Tomsk,Russia,2009:375-376.(in Russian) [14] LUO Z W,GU X A,ZHU W C,et al.. Optical properties of GaSe∶S crystals in terahertz frequency range[J]. Opt. Precision Eng.,2011,19:354-359.(in Chinese) [15] ANDREEV Y M,LANSKII G V,ORLOV S N,et al.. Physical properties, phase matching and frequency conversion in GaSe1-xSx, Ga1-xInxSe and GaSe1-xTex[C]//17th Int. Conf. on Advanced Laser Technologies,Sept 26-Oct 1,2009,Antalya,Turkey,2009. [16] SARKISOV S Y,NAZAROV M M,TOLBANOV O P,et al.. Generation and detection of THz pulsed radiation by GaSe GaSe, GaSe1-xTex, GaSe1-xSx, crystals[C]//IX Russian Conf. on Semiconductor Physics,Sept 28-Oct 3,2009,Novosibirsk Tomsk,Russia,2009.(in Russian) [17] ZHANG L M,GUO J,LI D J,et al.. Dispersion properties of GaSe1-xSx in the terahertz range[J]. J. Appl. Spectr.,2011,77:850-856. [18] MANDAL K C,KANG S H,CHOI M,et al.. III VI chalcogenide semiconductor crystals for broadband tunable THz sources and sensors[J]. IEEE J. Sel. Top. in Quant. Electron.,2008,14:284-288. [19] CHEN C W,HSU Y K,HUANG J Y,et al.. Generation properties of coherent infrared radiation in the optical absorption region of GaSe crystal[J]. Opt. Express,2006,14:10636-10644. [20] CHEN C W,TANG T T,LIN S H,et al.. Optical properties and potential applications of ε-GaSe at terahertz frequencies[J]. J. Opt. Soc. Am. B,2009,26:A58-A65. [21] ZHANG Y F,WANG R,KANG Z H,et al.. AgGaS2 and Al doped GaSe for IR application[J]. Opt. Commun.,2011,284:1677 1681. [22] ANDREEV Y M,VINNIK E M,LANSKII G V,et al.. Generation of tunable THz emission in solid solution GaSe1-xTex crystals[C]//Eight Siberian Conference on Climate and Ecological Monitoring,Oct 8-10,2009,Tomsk,Russia,2009:380-381.(in Russian) [23] ANDREEV Y M,VINNIK E M,LANSKII G V. Layered compound semiconductor GaSe and GaTe crystals for THz applications[J]. Mater. Res. Soc. Symp. Proc.,2007,969:W03-W15. [24] LUO C W,KU S A,CHU W C,et al.. Physical property of the crystals grown from GaSe∶AgGaSe2melt and application in Mid-IR facilities[C]//Int. Conference, Atomic and Molecular Pulsed,Sept 12-16,2011,Tomsk,Russia,2011:117. [25] SARKISOV S Y,NAZAROV M M,SHKURINOV A P,et al.. GaSe1-xSx and GaSe1-xTex solid solutions for terahertz generation and detection[C]//34th Int. Conf. on Infrared,Millimeter and Terahertz wave(IRMMW-THz-2009),Sept 21-25,2009,Busan,South Korea,2009. [26] DAS S,GHOSH C,VOEVODINA O G,et al.. Modified GaSe crystal as a parametric frequency converter[J]. Appl. Phys. B,2006,82:43-46. [27] ANDREEV Y M,ATUCHIN V V,LANSKII G V,et al.. Growth,real structure and applications of GaSe1-xSx crystals[J]. Mat. Sci. Eng. B,2006,128:205-210. [28] WANG T J,GAO J C,ANDREEV Y M,et al.. GaSe1-xSx solid solutions[J]. Rus. Phys. J.,2007,50:560-565. [29] QU Y,KABF Z H,WANG T J,et al.. GaSe1-xSx second harmonic generators for CO2 lidars[J]. Atmos. Oceanic Opt.,2008,21:146-151. [30] KU S A,LUO C W,LIO H L,et al.. Optical properties of nonlinear solid solution GaSe1-xSx(0<x≤0.4) crystals[J]. Rus. Phys. J.,2008,51:1083-1089. [31] MAYER G V,KOPYLOVA T N,ANDREEV Y M,et al.. Parametrical conversion of the frequency of organic lasers into the middle-IR range of the spectrum[J]. Rus. Phys. J.,2009,52:640-645. [32] CHU L L,ZHANG I F,KANG Z H,et al.. Phase matching for the second harmonic generation in GaSe crystals[J]. Rus. Phys. J.,2011,53:1235-1242. [33] ANDREEV Y M,KOKH K A,LANSKII G V V,et al.. Structural characterization of pure and doped GaSe by nonlinear optical method[J]. J. Cryst. Growth,2011,318:1164-1166. [34] HAYEK M,BRAFMAN O,LIETH R M A. Splitting and coupling of lattice modes in the layer compounds GaSe, GaS, and GaSexS1-x[J]. Phys. Rev. B,1973,8:2772-2779. [35] VTODIEV I,LEONTIE L,CARAMAN M,et al.. Optical properties of p-GaSe single crystals doped with Te[J]. J. App. Phys.,2009,105:023524. [36] YOSHIDA H,NAKASHIMA S,MITSUISHI A. Phonon Raman spectra of layer compound GaSe[J]. Phys. Stat. Sol.(b),1973,59:655-666. [37] MAMEDOV G M,KARABULUT M,ERTAP H,et al.. Exciton photoluminescence, photoconductivity and absorption in GaSe0.9Te0.1 alloy crystals[J]. J. Lumines.,2009,129:226-230. [38] ABDULLAEV G B,ALLAKHVERDIEV K R,BABAEV S S,et al.. Raman scattering from GaSe1-xTex[J]. Solid State Commun.,1980,34:125-128. [39] SHIGETOMI S,IKARI T. Optical and electrical characteristics of p-GaSe doped with Te[J]. J. Appl. Phys.,2004,95:6480-6482. [40] MENESES E A,JANNUZZI N,FREITAS J R,et al.. Photoluminescence of layered GaSe1-xTex crystals[J]. Phys. Stat. Sol.(b),1976,78:K35-K38.
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出版历程
  • 收稿日期:  2011-09-21
  • 修回日期:  2011-11-23
  • 刊出日期:  2011-12-25

掺碲硒化镓晶体的光学性能

    基金项目:

    supported by RFBR Project(No.10-02-01452-a), Presidium SB RAS under the Project VII.63.3.1 of VII.63.3 Prog. and Join Proj. between Presidium SB RAS and Presidium NAS, Belarus No.10 of 2010.

  • 中图分类号: O734; TN304.2

摘要: 采用水平区熔法生长了碲(Te)掺杂浓度(质量百分比)分别为0.05%,0.1%,0.5%,1%,2%的硒化镓(GaSe)晶体,并分别对掺杂浓度为0.01%,0.07%,0.38%,0.67%,2.07%的GaSe∶Te晶体的光学性能进行了表征。首次研究了GaSe∶Te晶体中刚性层声子模式的转换。吸收光谱测试结果表明:当Te掺杂浓度小于0.38%时,振动中心位于0.59 THz附近的E'(2)刚性模式吸收峰强度可达最大值,这一过程与GaSe∶Te晶体光学性能的提高密切相关。但Te掺杂浓度的进一步提高会导致E'(2)刚性模式吸收峰强度逐渐减弱,当Te掺杂浓度为1%时,E'(2)刚性模式吸收峰基本消失。这两个过程与GaSe∶Te晶体光学质量的下降密切相关。因此,E'(2)刚性模式吸收强度达到最高时对应的掺杂浓度即是GaSe∶Te晶体中Te的最佳掺杂浓度,光整流产生太赫兹过程证实了此结论的正确性。

English Abstract

古新安, 朱韦臻, 罗志伟, ANDREEV Y M, LANSKII G V, SHAIDUKO A V, IZAAK T I, SVETLICHNYI V A, VAYTULEVICH E A, ZUEV V V. 掺碲硒化镓晶体的光学性能[J]. 中国光学, 2011, 4(6): 660-666.
引用本文: 古新安, 朱韦臻, 罗志伟, ANDREEV Y M, LANSKII G V, SHAIDUKO A V, IZAAK T I, SVETLICHNYI V A, VAYTULEVICH E A, ZUEV V V. 掺碲硒化镓晶体的光学性能[J]. 中国光学, 2011, 4(6): 660-666.
KU Shin-an, CHU Wei-chen, LUO Chih-wei, ANDREEV Y M, LANSKII G V, SHAIDUKO A V, IZAAK T I, SVETLICHNYI V A, VAYTULEVICH E A, ZUEV V V. Optical properties of Te-doped GaSe crystal[J]. Chinese Optics, 2011, 4(6): 660-666.
Citation: KU Shin-an, CHU Wei-chen, LUO Chih-wei, ANDREEV Y M, LANSKII G V, SHAIDUKO A V, IZAAK T I, SVETLICHNYI V A, VAYTULEVICH E A, ZUEV V V. Optical properties of Te-doped GaSe crystal[J]. Chinese Optics, 2011, 4(6): 660-666.
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