金属接触对有机薄膜激光特性的影响

郝亚茹; 邓招奇

doi:10.37188/CO.2020-0007

金属接触对有机薄膜激光特性的影响

郝亚茹,
邓招奇^,

电子科技大学中山学院，广东中山 528402

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中图分类号: O439
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出版历程
- 收稿日期: 2020-01-10
- 修回日期: 2020-03-09
- 刊出日期: 2020-08-01

The effects of metallic contacts on the lasing characteristics of organic thin films

doi: 10.37188/CO.2020-0007

HAO Ya-ru,
DENG Zhao-qi^,

University of Electronic Science and Technology of China, Zhongshan Institute, Zhongshan 528402, China

Funds: Supported by National Natural Science Foundation of China (No.61605083); Major Projects in Zhongshan City (No.2017B1023)

More Information

Author Bio:
Yaoru Hao was born in Shijiazhuang, Hebei, in 1981. She received a Ph.D. degree in optics engineering in 2009 in the Changchun Institute of Optics, Fine Mechanics and Physics, Jilin, China. Her official title is Lecturer. Her research interests are in applied optics and computer simulation. E-mail:fengyunxiaohao@foxmail.com

Zhaoqi Deng was born in Yixing, Jiangsu, in 1981. He received an M.Sc. degree in optics engineering in 2007 in the Changchun Institute of Optics, Fine Mechanics and Physics, Jilin, China. His title is Lecturer. His research interests are in applied optics and computer simulation. E-mail: yeyunxiaopan@foxmail.com

Corresponding author: yeyunxiaopan@foxmail.com

摘要

摘要: 金属触点引起的光学损耗被认为是阻碍电泵浦有机激光器发展的主要障碍。本文对于存在金属接触电极的有机薄膜，通过设计适当的分布反馈结构形成多通道发射和表面等离子体激元（SPs），从而实现光泵浦激光。与采用无金属接触电极的有机薄膜进行对比，结果表明，本文方法可实现更好的激光性能。利用本文设计的结构，在740 nm光栅结构的Ag衬底上实现了(0.026 mJ/pulse)的激光发射。由于本文设计方法没有增加器件厚度，所以当光学性能得到改善时，电性能并没有降低。
- 有机激光 /
- 表面等离子体 /
- 光栅耦合
Abstract: Optical loss caused by metallic contacts are thought to be a major obstacle to the achievement of organic laser diodes. We find that multi-channel emissions and Surface Plasmons (SPs) by designing a proper distributed feedback structure can allow successful lasing in organic thin films in the presence of contacting electrodes and even show better lasing performance when compared to metal-free cases. In this paper, a lower threshold (0.026 mJ/pulse) laser emission is achieved with the Ag metal electrode on the grating structure with a period of 740 nm. Since there is no increase in device thickness, the electrical properties are not reduced when the optical properties are improved.
- organic laser /
- surface plasmons /
- grating coupling

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Figure 1. The grating structure scanned with an atomic force microscope

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Figure 2. Absorption and photoluminescence spectra of the DCJTI:PVK film

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Figure 3. Emission spectra of DCJTI:PVK system pumped with an optically pulsed laser at above the lasing threshold. The inset shows the photograph of the far-field pattern.

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Figure 4. Output emission intensity integrated over all wavelengths as a function of the pump intensity for metal-free device (circles); DCJTI:PVK films with quartz substrate and Al-backed device (stars); DCJTI:PVK films with a grating period of 740 nm. The inset shows the grating coupling processes between the waveguide mode and lasing emission under the fourth Bragg condition

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Figure 5. Output emission intensity integrated over all wavelengths as a function of the pump intensity for metal-free device (rectangles); DCJTI:PVK films with quartz substrate, Al-backed device (triangles); DCJTI:PVK films and Ag-backed device (stars); DCJTI:PVK films with a grating period of 740 nm. The inset shows the exiting and coupling processes between the lasing light and the SPs mode

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Figure 6. Simulations for the excited SPs intensity from the DCJTI:PVK DFB laser with Ag layer thickness of 30 nm

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Table 1. ASE characteristics of DCJTI:PVK films with quartz substrate and lasing characteristics of distributed feedback lasers (gain material DCJTI:PVK) with grating period of 400 nm and 740 nm.

Metal layer	Period /nm	Threshold /(mJ·pulse⁻¹)	Wavelength /nm	FWHM /nm
(none)	(flat substrate)	0.057	635	12.4
Al	(flat substrate)	0.37	632	11.8
Ag	(flat substrate)	0.41	632	12.1
(none)	400	0.03	641	0.13
Al	400	0.13	637	0.15
Ag	400	0.16	640	0.23
(none)	740	0.06	613	0.32
Al	740	0.067	612	0.25
Ag	740	0.026	615	0.37

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