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EBCMOS近贴聚焦结构及电场分布对电子运动轨迹的影响

王巍 李野 陈卫军 宋德 王新

王巍, 李野, 陈卫军, 宋德, 王新. EBCMOS近贴聚焦结构及电场分布对电子运动轨迹的影响[J]. 中国光学, 2020, 13(4): 713-721. doi: 10.37188/CO.2020-0063
引用本文: 王巍, 李野, 陈卫军, 宋德, 王新. EBCMOS近贴聚焦结构及电场分布对电子运动轨迹的影响[J]. 中国光学, 2020, 13(4): 713-721. doi: 10.37188/CO.2020-0063
WANG Wei, LI Ye, CHEN Wei-jun, SONG De, WANG Xin. Influence of proximity focusing structure and electric field distribution on electron trajectory in the EBCMOS[J]. Chinese Optics, 2020, 13(4): 713-721. doi: 10.37188/CO.2020-0063
Citation: WANG Wei, LI Ye, CHEN Wei-jun, SONG De, WANG Xin. Influence of proximity focusing structure and electric field distribution on electron trajectory in the EBCMOS[J]. Chinese Optics, 2020, 13(4): 713-721. doi: 10.37188/CO.2020-0063

EBCMOS近贴聚焦结构及电场分布对电子运动轨迹的影响

doi: 10.37188/CO.2020-0063
基金项目: 国家自然科学基金资助项目(No.11874091);吉林省科技厅重点科技研发项目(No.20180201034GX)
详细信息
    作者简介:

    王巍:王 巍(1983—),女,吉林和龙人,理学硕士,助理研究员,2011年于长春理工大学获得硕士学位,现在长春工业大学工作,主要从事光电成像器件与系统方面的研究。E-mail:wangwei83@ccut.edu.cn

    李野:李 野(1969—),男,吉林镇赉人,理学博士,教授,2011年于长春理工大学获得博士学位,主要从事光电成像器件与系统方面的研究。E-mail:liyecust@163.com

    宋德:宋 德(1981—),男,吉林靖宇人,理学博士,副教授,2009年于中国科学院长春应用化学研究所获得博士学位,现在长春理工大学工作。主要从事光电成像器件与系统方面的研究。E-mail:songde614@163.com

    通讯作者:

    liyecust@163.com

    songde614@163.com

  • 中图分类号: TN223

Influence of proximity focusing structure and electric field distribution on electron trajectory in the EBCMOS

Funds: Supported by National Natural Science Foundation of China (No. 11874091); Key Scientific and Technological Project of Science and Technology Department of Jilin Province (No. 20180201034GX)
More Information
  • 摘要: 为获得高分辨率的电子轰击型CMOS (EBCMOS)成像器件,本文就近贴聚焦结构内电场分布对电子运动轨迹的影响进行了研究。设计了不同的EBCMOS结构并得到3种电场分布情况,分别为光电阴极和背面轰击型CMOS (BSB-CMOS)之间的等势面不平行、部分平行和彼此平行。根据电磁学理论结合蒙特卡洛模拟方法,分别模拟了每种电场分布情况下的电子运动轨迹。研究结果表明:当设计的电子倍增层表面覆盖一层30 nm的超薄重掺杂层,保持极间电压为4000 V且极间距为1 mm时,光生电子轰击BSB-CMOS表面时扩散直径可减小至30 μm。此结构具有电子聚焦作用,有助于实现高分辨率的EBCMOS。同时,进一步研究了光电阴极与BSB-CMOS之间的距离和电压对电子扩散直径的影响。研究发现,近贴间距越小、加速电压越高,相应的电场强度就越高,越有利于电子聚焦。本文工作将为改进电子轰击型CMOS成像器件的分辨率特性提供理论指导。
  • 图  1  电场作用下电子运动轨迹变化示意图

    Figure  1.  Schematic diagram of changes in a photoelectron trajectory caused by the electric field

    图  2  (a) 光电阴极与BSB-CMOS间的等势面不平行时EBCMOS近贴聚焦结构模型示意图及(b) 光电阴极与BSB-CMOS之间的电场分布模拟图

    Figure  2.  (a) Schematic diagram of the EBCMOS model with the proximity focusing structure when the equipotential surfaces between the photocathode and BSB-CMOS are not parallel and (b) electrostatic distribution between the photocathode and BSB-CMOS

    图  3  无电场时的电子运动轨迹模拟图。内图为轰击BSB-CMOS表面的光电子分布图(扩散范围超过0.1 mm2

    Figure  3.  Simulation of electron trajectories in the absence of electric fields. Inset figure is the distribution diagram of photoelectrons bombarding the surface of BSB-CMOS (scattered over an area exceeding 0.1 mm2)

    图  4  (a)光电阴极与BSB-CMOS间的等势面部分平行时EBCMOS近贴聚焦结构模型示意图及 (b)光电阴极与BSB-CMOS之间的电场分布模拟图

    Figure  4.  (a) Schematic diagram of the EBCMOS model with the proximity focusing structure when the equipotential surfaces between the photocathode and BSB-CMOS are partially parallel and (b) electrostatic distribution between the photocathode and BSB-CMOS

    图  5  BSB-CMOS表面入射光电子分布图。(a)图4(b)A位置所产生的光电子;(b)光电阴极表面中心位置所产生的光电子(内图:电子运动轨迹的三维模拟图)

    Figure  5.  Distribution diagram of photoelectrons bombarding the surface of BSB-CMOS. (a) Photoelectrons generated at the position A shown in Figure 4(b); (b) photoelectrons generated at the center of photocathode surface. (Inset figures: 3-D simulation diagram of electron trajectories)

    图  6  (a)光电阴极与BSB-CMOS间的等势面平行时EBCMOS近贴聚焦结构模型示意图及 (b)光电阴极与BSB-CMOS之间的电场分布模拟图

    Figure  6.  (a) Schematic diagram of the EBCMOS model with the proximity focusing structure when the equipotential surfaces between the photocathode and the BSB-CMOS are parallel and (b) electrostatic distribution between the photocathode and BSB-CMOS

    图  7  电子运动轨迹三维模拟图。内图为BSB-CMOS表面入射光电子分布图(扩散形成直径约为30 µm的圆)

    Figure  7.  3D simulation diagram of electron trajectories. Inset figure is the distribution of photoelectrons bombarding the surface of BSB-CMOS (scattered into a circle with diameter of approximate 30 µm)

    图  8  光电阴极与BSB-CMOS间距不同时,BSB-CMOS表面入射光电子分布图

    Figure  8.  Distribution diagrams of photoelectrons bombarding the surface of BSB-CMOS at different distances between photocathode and BSB-CMOS

    图  9  光电阴极与BSB-CMOS之间电压不同时,BSB-CMOS表面入射光电子分布图

    Figure  9.  Distribution diagrams of photoelectrons bombarding the surface of BSB-CMOS when the voltage between photocathode and BSB-CMOS is changed

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  • 收稿日期:  2020-04-21
  • 修回日期:  2020-06-08
  • 刊出日期:  2020-08-01

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