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Photon-assisted Fano resonance tunneling periodic double-well potential characteristics

ZHANG Yong-tang

张永棠. 光子辅助Fano共振隧穿周期双阱势特性[J]. 中国光学, 2021, 14(5): 1251-1258. doi: 10.37188/CO.2020-0068
引用本文: 张永棠. 光子辅助Fano共振隧穿周期双阱势特性[J]. 中国光学, 2021, 14(5): 1251-1258. doi: 10.37188/CO.2020-0068
ZHANG Yong-tang. Photon-assisted Fano resonance tunneling periodic double-well potential characteristics[J]. Chinese Optics, 2021, 14(5): 1251-1258. doi: 10.37188/CO.2020-0068
Citation: ZHANG Yong-tang. Photon-assisted Fano resonance tunneling periodic double-well potential characteristics[J]. Chinese Optics, 2021, 14(5): 1251-1258. doi: 10.37188/CO.2020-0068

光子辅助Fano共振隧穿周期双阱势特性

doi: 10.37188/CO.2020-0068
详细信息
  • 中图分类号: TN241

Photon-assisted Fano resonance tunneling periodic double-well potential characteristics

Funds: Supported by National Natural Science Foundation of China (No. 61663029); Key Platform and Characteristic Innovation Project for Universities of Guangdong Province (No. 2020KTSCX171)
More Information
    Author Bio:

    Zhang Yong-tang (1981—), male, born in Nanchang, Jiangxi Province. He is a doctor, Professor and master supervisor. He obtained his doctor's degree from Xiamen University in 2018, He is mainly engaged in the research of optical communication and network security perception. Email: gov211@163.com

    Corresponding author: gov211@163.com
  • 摘要: 周期双阱势的光学性质是激光物理和量子光学的前沿研究领域之一。该文研究了具有时间周期双阱势的石墨烯系统中光子辅助狄拉克电子的Fano型共振隧穿。利用双量子阱结构,电子通过两量子阱之间的薄势垒的共振隧穿将导致束缚态能级的分裂,Fano型共振谱将分裂为两个不对称共振峰。通过改变相位、频率和振幅来调制Fano峰的形状,可以用来调制Dirac在石墨烯中的电子输运性质。数值分析表明,两个振荡场的相对相位可以调节非对称Fano型共振峰的形状。当相对相位从0增加到${\text{π}}$时,共振峰谷从峰的一侧移到另一侧;在临界相位${{3{\text{π}} }/{11}}$处,不对称共振峰变得对称。此外,还可以通过改变振荡场的频率和振幅以及静态势阱的结构来调制Fano峰的分布。这些有趣的物理性质可以用来调节石墨烯中Dirac的电子输运性质。
  • Figure  1.  Sketch model of Dirac electron transport through a double-well potential and two applied oscillating fields. ${V_0}$ is the depth of the static well; $d$ is the width of wells, $a$ is the thickness of barrier. V1 cos (ωt + α) and V1 cos (ωt + β) are the applied oscillating fields

    Figure  2.  Fano-type resonance in conductance $G$ for $\alpha = \beta = 0$, $a = 40\;{\rm{ nm}}$${k_y} = 0.006\;{\rm{ n}}{{\rm{m}}^{ - 1}}$. (a) ћ$\omega = 11\;{\rm{ meV}}$, ${V_0} = - 50\;{\rm{ meV}}$$d = 200\;{\rm{ nm}}$; (b) ${V_1} = 1.0\;{\rm{ meV}}$, ${V_0} = - 50\;{\rm{ meV}}$$d = 200\;{\rm{ nm}}$; (c) ћ$ \omega = 11\;{\rm{ meV}}$${V_1} = 1.0\;{\rm{ meV}}$, $d = 200\;{\rm{ nm}}$; (d) ${V_1} = 1.0\;{\rm{ meV}}$,ћ$ \omega = 11\;{\rm{ meV}}$${V_0} = - 50\;{\rm{ meV}}$.

    Figure  3.  Conductance G as a function of E for different separation distance between two quantum wells at $\alpha = \beta = 0$, ${k_y} = 0.006\;{\rm{ n}}{{\rm{m}}^{ - 1}}$, ћ$ \omega = 11\;{\rm{ meV}}$, ${V_1} = 1.0\;{\rm{ meV}}$, ${V_0} = - 50\;{\rm{ meV}}$ and $d = 200\;{\rm{ nm}}$.

    Figure  4.  Variation of Fano-type resonance line-shape in conductance $G$ with $\beta $ at $\alpha = 0$, $a = 40\;{\rm{ nm}}$, ${k_y} = $$ 0.006\;{\rm{ n}}{{\rm{m}}^{ - 1}}$, ћ$ \omega = 11\;{\rm{ meV}}$, ${V_1} = 1.0\;{\rm{ meV}}$, ${V_0} = - 50\;{\rm{ meV}}$ and $d = 200\;{\rm{ nm}}$. (a) $\,\beta$=0; (b) $\,\beta=\dfrac{3\pi}{11}$; (c) $\,\beta= \dfrac{5\pi}{11}$; (d) $\,\beta=\pi $.

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出版历程
  • 收稿日期:  2020-04-21
  • 修回日期:  2020-06-08
  • 网络出版日期:  2021-06-21
  • 刊出日期:  2021-09-18

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