拓扑量子材料光电探测器研究进展

张兴超; 潘锐; 韩嘉悦; 董翔; 王军

doi:10.37188/CO.2020-0096

拓扑量子材料光电探测器研究进展

doi: 10.37188/CO.2020-0096

张兴超^1,,
潘锐¹,
韩嘉悦¹,
董翔^1, ,,
王军^{1, 2, ,}

1.
电子科技大学光电科学与工程学院，四川成都 610054
2.
电子科技大学电子薄膜与集成器件国家重点实验室，四川成都 610054

基金项目: 国家自然科学基金优秀青年基金（No. 61922022）；国家自然科学基金创新研究群体科学基金（No. 61421002）；国家自然科学基金（No. 61875031）

详细信息

作者简介:
张兴超（1993—），男，河南洛阳人，电子科技大学博士研究生，主要从事基于拓扑材料宽光谱光电探测器的研究。E-mail：2803226060@qq.com

董　翔（1982—），男，四川成都人，电子科技大学助理研究员，2005年、2014年于电子科技大学分别获得学士、博士学位，主要从事光电探测器件及其敏感材料研究。E-mail：dongxiang@uestc.edu.cn

王　军（1982—），男，山东聊城人，电子科技大学教授、博士生导师，2002年、2008年于电子科技大学分别获得学士、博士学位，长期从事室温红外与太赫兹探测技术相关研究，荣获国家技术发明二等奖、教育部及工信部技术发明二等奖、获得自然科学基金优秀青年基金和教育部新世纪优秀人才支持计划等资助。E-mail：uestc_wj@yahoo.com

中图分类号: O434;TN29
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出版历程
- 收稿日期: 2020-05-25
- 修回日期: 2020-06-15
- 网络出版日期: 2020-12-30
- 刊出日期: 2021-01-25

Recent progress and prospects of topological quantum material-based photodetectors

ZHANG Xing-chao^1
,,
PAN Rui¹,
HAN Jia-yue¹,
DONG Xiang^{1
, ,},
WANG Jun^{1, 2
, ,}

1.
School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
2.
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

Funds: Supported by Outstanding Youth Foundation of National Natural Science Foundation of China (No. 61922022); Foundation for Innovative Research Groups of the National Natural Science Foundation of China (No.61421002); National Natural Science Foundation of China (No. 61875031)

More Information

Corresponding author: dongxiang@uestc.edu.cn; uestc_wj@yahoo.com

摘要

摘要: 物质拓扑态的发现是近年来凝聚态物理和材料科学的重大突破。由于存在不同于常规半导体的特殊拓扑量子态（如狄拉克费米子、外尔费米子、马约拉纳费米子等），拓扑量子材料通常能表现出一些新颖的物理特性（如量子反常霍尔效应、三维量子霍尔效应、零带隙的拓扑态、超高的载流子迁移率等），因而在低能耗电子器件和宽光谱光电探测器件领域具有重要的研究价值。本文综述了拓扑量子材料的特性与制备方法以及在光电探测领域的发展现状，重点讨论了拓扑绝缘体与拓扑半金属宽光谱光电探测器的器件结构与性能，同时也对拓扑量子材料在光电探测器领域的发展前景进行了展望。
- 拓扑量子材料 /
- 拓扑半金属 /
- 拓扑绝缘体 /
- 光电探测器
Abstract: The discovery of the topological quantum states of matter is a major milestone in condensed matter physics and material science. Due to the existence of special surface states (e.g. Dirac fermions, Weyl fermions, Majorana fermions), topological quantum materials can usually exhibit some novel physical properties (such as the quantum anomalous Hall effect, 3D quantum Hall effect, Zero-band gap caused by topological states, ultra-high carrier mobility, etc.), which are different from conventional semiconductors. Because of this, there is an abundance of prospects for applications in low-power electronic and optoelectronic devices, especially in broad-spectrum detection. However, the application of topological quantum materials in the field of photoelectric detection is still in the exploratory stage at present. This article reviews the characteristics and preparation methods of topological quantum materials and the development status with respect to optical-sensing materials in photodetectors. The structure and performance of the devices based on topological quantum materials are also mentioned as the development prospects in the field of broad-spectrum detection.
- topological quantum materials /
- topological semimetal /
- topological insulator /
- photodetector

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图 1 光电探测器类型与探测机理示意图

Figure 1. Photodetector categories and schematic diagram of detection mechanisms

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图 2 拓扑量子材料制备方法

Figure 2. Preparation methods of some topological quantum material

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图 3 （a, b） Bi₂Se₃纳米线光电探测器示意图及其在1064 nm辐射下的光电流响应^[60]；（c, d） Bi₂Se₃纳米线/Si异质结结构示意图及其在808 nm下的光电流响应^[61]；（e）Bi₂Se₃/Si纳米片器件结构示意图^[62]；（f）Bi₂Se₃纳米片太赫兹光电探测器结构示意图^[64]

Figure 3. (a, b) Schematic diagram of a Bi₂Se₃ nanowire photodetector and its photocurrent response under 1064 nm^[60]; (c, d) schematic diagram of a Bi₂Se₃ nanowire/Si heterojunction and its photocurrent response at 808 nm^[61]; (e) schematic diagram of a Bi₂Se₃/Si nanosheet device^[62]; (f) schematic diagram of a Bi₂Se₃ nanosheet terahertz photodetector^[64]

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图 4 (a-d) Bi₂Se₃/石墨烯异质结^[65]、Bi₂Se₃/MoO₃异质结^[66]、Bi₂Se₃薄膜/钙钛矿量子点^[67]及以Bi₂Se₃薄膜为电极的钙钛矿薄膜光电探测器结构示意图^[68]

Figure 4. (a-d) Schematic diagrams of photodetector based on Bi₂Se₃/graphene^[65], Bi₂Se₃/MoO₃ heterojunction^[66], Bi₂Se₃film/ perovskite quantum dots^[67] and perovskite film with Bi₂Se₃ electrodes^[68]

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图 5 (a, b) Bi₂Te₃的器件结构示意图及偏振特性^[69]；（c）Bi₂Te₃/WS₂垂直异质结光电探测器结构示意图^[70]；（d）以B_i2Te₃作为电极的SnS₂光电探测器结构示意图^[71]；(e，f) Bi₂Te₃/有机小分子平面异质结光电探测器及其能带结构示意图^[72]

Figure 5. (a, b) Device structure and polarization characteristics of Bi₂Te₃^[69]; (c, d) schematic diagram of photodetector based on Bi₂Te₃/WS₂ vertical heterojunction^[70]and SnS₂ with Bi₂Te₃ electrode^[71]; (e, f) schematic diagram of Bi₂Te₃/organic small molecule planar heterojunction photodetector and its corresponding energy band structure^[72]

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图 6 （a, b）石墨烯/Bi₂Te₃复合光电探测器结构示意图及其光谱吸收特性^[75]；（c, d）Bi₂Te₃/WSe₂异质结光电探测器及其光电响应特性^[76]

Figure 6. (a, b) Graphene/Bi₂Te₃ photodetector and its corresponding spectral absorption characteristic^[75]; (c, d) Bi₂Te₃/ WSe₂ photodetector and its corresponding photocurrent response characteristic^[76]

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图 7 （a, b）Sb₂Te₃薄膜光电探测器及其能带结构示意图^[77]；(c) Sb₂Te₃/STO异质结光电探测器阵列示意图^[78]；(d) Sb₂Te₃/MoS₂异质结光电晶体管示意图^[79]

Figure 7. (a, b) Schematic diagram of Sb₂Te₃ thin film photodetector and its corresponding charge transfer mechanism^[77]; (c,d) schematic diagrams of Sb₂Te₃/STO heterojunction array^[78] and Sb₂Te₃/MoS₂ heterojunction phototransistor^[79]

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图 8 （a, b）SnTe薄膜光电探测器结构示意图及SEM图像^[83]；（c, d）SnTe纳米片光电探测器结构示意图及SEM图形表征^[84]

Figure 8. (a, b) Schematic diagram of an SnTe thin film photodetector and its SEM image^[83]; (c, d) schematic diagram of SnTe nano-flake photodetector and its SEM image^[84]

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图 9 （a, b）两种不同结构的SnTe薄膜光电探测器示意图^[85-86]；（c,d）Bi₂Se₃/SnTe异质结光电探测器及能带结构示意图^[87]

Figure 9. (a, b) Schematic diagrams of SnTe thin film photodetectors with different structures^[85-86]; (c,d) schematic diagram of Bi₂Se₃/SnTe heterojunction and its corresponding energy band structure^[87]

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图 10 （a, b） Cd₃As₂薄膜/并五苯异质结能带结构及在不同波段下的光电流响应特性^[93]；(c, d) Cd₃As₂薄膜、Cd₃As₂/DPEPO和Cd₃As₂/PEDOT:PSS异质结光谱吸收特性及在不同条件下的响应度^[94]

Figure 10. (a, b) Charge transfer mechanism and photocurrent response characteristics of Cd₃As₂ film/Pentacene^[93]；（c,d）absorption spectra of Cd₃As₂ film, Cd₃As₂/DPEPO and Cd₃As₂/PEDOT:PSS heterojunction and responsivities under different wavebands^[94]

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图 11 (a, b) PtTe₂和PtTe₂/石墨烯异质结太赫兹器件的结构示意图^[96]；（c，d）PtTe₂/石墨烯异质结器件的SEM图像及电荷转移机理^[97]

Figure 11. (a, b) Schematic diagram of PtTe₂ and PtTe₂/graphene heterojunction terahertz devices^[96]; (c, d) charge transfer mechanism of PtTe₂/graphene heterojunction device and its SEM image^[97]

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图 12 (a) TaAs光电探测器结构示意图及其 (b) 光电流响应特性^[98]

Figure 12. (a) Schematic diagram of TaAs photodetector structure and (b) corresponding photocurrent response characteristics^[98]

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图 13 （a） MoTe₂/Si异质结光电探测器结构示意图^[104]；（b） MoTe₂/Ge异质结光电探测器结构示意图^[105]；（c） MoTe₂/石墨烯异质结光电探测器结构示意图^[106]；（d） MoTe₂纳米片/CdS纳米片异质结光电探测器结构示意图^[108]

Figure 13. Schematic diagrams of (a) MoTe₂/Si^[104], (b) MoTe₂/Ge^[105], (c) MoTe₂/graphene^[106] and (d) MoTe₂/CdS^[108] heterojunction photodetectors

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图 14 拓扑量子材料光电探测器的响应率与波长分布

Figure 14. The responsivity and wavelength distributions of topological quantum materials

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图 15 二维材料与拓扑量子材料光电探测器响应波段对比

Figure 15. Detection ranges of two-dimensional materials and topological quantum materials

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表 1 基于拓扑绝缘体的光电探测器性能参数

Table 1. Performance parameters of photodetectors based on topological insulators

Topological Type	Active Materials	Responsivity (A·W⁻¹)	Bias (V)	Detectivity (Jones)	Response time (ms)	Detecting range (nm)	Ref.
Topological insulator	Bi₂Se₃ NW	300 @1064 nm	0.175	7.5×10⁹	550/400	532~1064	[60]
	Bi₂Se₃ NW/Si	924.2 @808 nm	−5	2.38×10¹²	45/47	380~1310	[61]
	Bi₂Se₃/Si NW	938.4@890 nm	NA	2.35×10¹³	41/79	Near-infrared	[62]
	Bi₂Se₃/ln₂Se₃	1650 @633 nm	5	NA	NA	Visible	[63]
	Bi₂Se₃ flakes	75 @THZ	0	2.17×10¹¹	60	Terahertz	[64]
	Bi₂Se₃ film/Gra	1.97 @ 3.5 μm	0.5	1.7×10⁹	NA	Mid-infrared	[65]
	Bi₂Se₃film/MoO₃	2609 @1310 nm	20	9.43×10¹⁰	63/78	405~1550	[66]
	Bi₂Te₃ film/WS₂	30.4 @ 1550 nm	3	2.3×10¹¹	20/20	375~1550	[70]
	Bi₂Te₃/Pentacene	14.89 @650 nm	0	7.8×10¹⁰	1.89/2.47	450~3500	[72]
	Bi₂Te₃/CuPc	23.54 @650 nm	0	1.85×10¹⁰	1.42/1.98	405~3500	[73]
	Bi₂Te₃ flake/Gra	35 @532 nm	1	NA	NA	532~1550	[75]
	WSe₂/Bi₂Te₃	2100@633 nm	1	NA	0.18/0.21	375~1550	[76]
	Sb₂Te₃ film	21.7 @980 nm	1	1.22×10¹¹	NA	Near-infrared	[77]
	Sb₂Te₃/STO	0.048 @405 nm	0	8.6×10¹⁰	0.030/0.095	405~1550	[78]
	Sb₂Te₃/MoS₂	330 @520 nm	−1	10¹²	0.36/0.47	Visible	[79]
Topological Crystalline Insulator	SnTe film	3.75 @2003 nm	2	NA	310/850	405~3800	[83]
	SnTe flake	49.03 @650 nm	1	NA	210/730	254~4650	[84]
	SnTe/Si	2.36 @1064 nm	0	1.54×10¹⁴	2.2/3.8	Near-infrared	[86]
	SnTe/Bi₂Se₃	0.146@1550 nm	−5	1.15×10¹⁰	6.9/19.2	Near-infrared	[87]

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表 2 基于狄拉克半金属的光电探测器性能参数

Table 2. Performance parameters of photodetectors based on Dirac semi-metal

Topological Type	Active materials	Responsivity (A·W⁻¹)	Bias (V)	Detectivity (Jones)	Response time (ms)	Detecting range (nm)	Ref.
Dirac semi-metal	Cd₃As₂	0.0059 @633 nm	0.01	NA	6.9 ps（intrinsic）	532~10600	[89]
	Cd₃As₂/MoS₂	2700 @405 nm	2	NA	0.043/0.065	365~1550	[91]
	Cd₃As₂/pentacene	0.0362@650 nm	0.0005	NA	30/60	450~10600	[93]
	Cd₃As₂/DPEPO	0.729 @808 nm	0	NA	9.7/11.4	365~10600	[94]
	Cd₃As₂/PEDOT:PSS	0.104 @808 nm	0	NA	0.282/0.517	405~10600	[94]
	Bilayer PtSe₂	0.15 @632 nm	0.1	7×10⁸	1.2	632~10000	[96]
	PtTe₂	1.6 @ THZ	0	NA	0.017/0.16	Terahertz	[97]
Weyl semi-metal	TaAs	0.0007 @438.5 nm	0.0001	1.68×10⁸	NA	438~10290	[98]
Weyl semi-metal	MoTe₂ flake	0.0004 @532 nm	0	1.07×10⁸	0.043	532~10600	[100]
Weyl semi-metal	WTe₂ flake	250 @3.8 μm (77 K)	0.1	NA	NA	514.5~10600	[102]
	TaIrTe₄	0.02@10.6 μm	0	1.8×10⁸	0.027	532~10600	[103]
	MoTe₂ film/Si	0.19 @980 nm	0	6.8×10¹³	150/350 (ns)	300~1800	[104]
	MoTe₂ flake/Ge	12460 @915 nm	−2	3.3 ×10¹²	5	Near-infrared	[105]

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