二维材料异质结高灵敏度红外探测器

张金月; 吕俊鹏; 倪振华

doi:10.37188/CO.2020-0139

二维材料异质结高灵敏度红外探测器

doi: 10.37188/CO.2020-0139

东南大学物理学院，江苏南京 211100

基金项目: 国家重点基础研究发展计划（No. 2017YFA0205700, No. 2019YFA0308000）；国家自然科学基金资助项目（No. 61774034, No. 91963130）

详细信息

作者简介:
张金月（1998—），女，山东德州人，硕士研究生，2019年于曲阜师范大学获得学士学位，主要从事二维材料红外探测器的研究。E-mail：m17853727134@163.com

吕俊鹏（1986—），男，山东莱阳人，博士，2009年于山东大学光信息科学与技术专业获得学士学位，2013年于新加坡国立大学获得博士学位，主要从事光谱与光电子学研究。E-mail：phyljp@seu.edu.cn

倪振华（1982—），男，浙江金华人，博士，2003年于上海交通大学获得学士学位，2007年于新加坡国立大学获得博士学位，主要从事光谱与光电子学研究。E-mail：zhni@seu.edu.cn

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出版历程
- 收稿日期: 2020-08-12
- 修回日期: 2020-09-07
- 网络出版日期: 2020-12-25
- 刊出日期: 2021-01-25

Highly sensitive infrared detector based on a two-dimensional heterojunction

School of Physics, Southeast University, Nanjing 211100, China

Funds: Supported by National Basic Research & Development plan of China (No. 2017YFA0205700, No. 2019YFA0308000); National Natural Science Foundation of China (No. 61774034, No. 91963130)

More Information

Corresponding author: phyljp@seu.edu.cn; zhni@seu.edu.cn

摘要

摘要: 要想实现弱光探测，需要探测器具有高灵敏度。石墨烯、过渡金属硫化物、黑磷等二维材料因具有宽光谱吸收、带隙可调、高载流子迁移率等良好的光学与电学性能，广泛应用于红外探测器的制作，然而这些材料存在弱光吸收、载流子迁移率低、空气稳定性差等问题，制约了其在高灵敏度红外探测领域的应用。同单一的二维材料相比，二维材料异质结不仅具有各单一材料的特点，而且由于两种材料的结合展现出新颖的物理特性，近年来在高灵敏度红外探测领域得到了广泛研究。本文基于影响灵敏度的主要因素，分析总结了提高红外探测器灵敏度的主要策略，回顾了近几年基于二维材料异质结高灵敏度红外探测器的发展，总结了其主要性能指标，最后指出了进一步提升红外探测灵敏度所面临的挑战，从如何平衡探测器响应度与响应速度、大面积二维异质结制备、异质结界面优化利用等方面展望了如何获得综合性能良好的高灵敏度红外探测器以及实现探测器商业应用，以期对高灵敏度红外探测领域的发展提供一定的指导意见。
- 红外探测 /
- 高灵敏度 /
- 二维材料 /
- 异质结
Abstract: To achieve weak signal detection, high sensitivity is required. Because of their strengths in optical and electrical properties such as wide spectral absorption, adjustable bandgap, and high carrier mobility, graphene, Transition Metal dichalcogenides (TMDs), Black Phosphorus (BP) and other two-dimensional (2D) materials have been used to fabricate infrared detectors. However, those 2D materials have disadvantages of weak light absorption, low carrier mobility and air instability, that restrict their applications in high-sensitivity infrared detection. Compared with single two-dimensional material, heterostructures consisting of two or more single 2D materials adopt the characteristics of each single material as well as some novel physical properties from heterojunctions/interfaces. In recent years, the heterostructure of 2D materials has been studied extensively in the field of high-sensitivity infrared detection. To gain a deep understanding of the factors affecting sensitivity, we provide a comprehensive review of the strategies that improve the sensitivity of infrared detectors and the development of high-sensitivity infrared detectors based on 2D heterojunctions in recent years. We summarize the figures of merit of these infrared detectors and identify the existing challenges impeding further improvements in sensitivity. Finally, by summarizing the challenges of future improving the sensitivity of infrared detection prospects for strategies to obtain high-sensitivity infrared detectors with good comprehensive performance and commercial applicability are presented with considerations for balancing the detector’s responsivity and response speed, large area two-dimensional heterojunction preparation, heterojunction interface optimization, and so forth.
- infrared detection /
- high sensitivity /
- 2D materials /
- heterojunction

HTML全文

图 1 基于二维异质结的低暗电流近红外探测器。（a）上图：基于MoS₂/石墨烯/WSe₂异质结构光电探测器的光学图像^[42]，比例尺：5 µm；下图：异质结器件示意图^[42]；（b）光响应度R（左）和比探测率D^*（右）在400到2400 nm范围内随波长的变化^[42]；（c）基于MoS₂/Si异质结光电探测器的示意图^[43]；（d）808 nm激光照射下，光响应度R（左）和比探测率D^*（右）随光功率的变化^[43]

Figure 1. Near-infrared detector based on two-dimensional heterojunction with a low current. (a) Upper panel: optical image of the MoS₂/graphene/WSe₂ heterostructure photodetector^[39], scale bar is 5 µm. Bottom panel: schematic diagram of a heterojunction device^[42]. (b) Photoresponsivity R (left) and specific detectivity D^*(right) vary with wavelength in the range of 400 to 2400 nm^[42]. (c) Schematic diagram of a MoS₂/Si heterojunction photodetector^[43]. (d) Photoresponsivity R (left) and detectivity D^* (right) vary with optical power under 808 nm laser irradiation^[43]

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图 2 基于二维异质结的高增益红外探测器

Figure 2. Infrared detector with high gain based on a two-dimension heterojunction

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表 1 二维异质结高灵敏红外探测器的主要性能指标

Table 1. Key performance parameters of high-sensitivity infrared detectors based on a two-dimensional heterojunction

探测器类型	材料	响应波长/nm	响应度/(A·W⁻¹)	响应时间	比探测率/Jones	参考文献
低暗电流探测器	MoS₂/石墨烯/WSe₂	400~2400	可见光：10⁴ 2400 nm：0.1	53.6/30.3 µs	可见光：10¹⁵ 2400 nm：10⁹	42
	MoS₂/Si	350~1100	−	3/40 µs	880 nm：10¹³	43
	PtSe₂/CdTe	200~2000	780 nm：0.506	8.1/43.6 µs	780 nm：4.2×10¹¹	44
	WS₂/GaAs	200~1500	808 nm：0.527	21.8/49.6 µs	808 nm: 1.03×10¹⁴	45
	BP/MoS₂	可见光-中红外	−	3.7/4 µs	3.8 µm：1.2×10¹⁰	19
	BP/InSe	可见光-中红外	−	−	−	20
	MoS₂/CdTe	200~1700	780 nm： 0.0366	43.7/82.1µs	780 nm：6.1×10¹⁰	48
	PtSe₂/Si纳米线	200~1550	780 nm：12.65	10.1/19.5 µs	780 nm：10¹³	49
	石墨烯/碳纳米带	300~1100	980 nm：0.209	68/78 µs	980 nm：4.87×10¹⁰	50
	还原氧化石墨烯/MoS₂/Si	350~4300	808 nm：21.8	2.8/46.6 µs	808 nm：3.8×10¹⁵	51
	WS₂/Si	200~3043	980 nm：8.3	16/29 µs	980 nm：4.6×10¹⁴	52
高光增益探测器	石墨烯/PbS量子点	可见光-短波近红外	600 nm：5×10⁷	10/100 ms	600 nm：7×10¹³	29
	MoS₂/HgTe量子点	600~2100	可见光：5 ×10³	−	可见光：6.4×10¹² 2 µm：10¹²	53
	BP/WSe₂	400~1600	637 nm：10³ 1550 nm：0.5	0.8/0.8 ms	637 nm：10¹⁴ 1550 nm：10¹⁰	54
	MoS₂/PbS量子点	400~1500	635 nm：6×10⁵	0.3~0.4 s	635 nm：5×10¹¹	55
	PbI₂/WS₂	500~1000	450 nm：7.1×10⁴	24/33 ms	450 nm：4.9×10¹³	56
	WSe₂/In₂O₃	550~1300	940 nm：3.5×10⁴	20 ms	940 nm：1.95×10¹⁶	57
	石墨烯/WS₂/石墨烯	可见-近红外	700 nm：2.5×10²	40~65 µs	700 nm：2.2×10¹²	58
	PdSe₂/MoS₂	405−10600	10.6 µm：42.1	74.5/93.1 ms	10.6 µm：8.21×10⁹	59

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