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低维光电材料缺陷与界面增强拉曼散射

侯翔宇 邱腾

侯翔宇, 邱腾. 低维光电材料缺陷与界面增强拉曼散射[J]. 中国光学, 2021, 14(1): 170-181. doi: 10.37188/CO.2020-0145
引用本文: 侯翔宇, 邱腾. 低维光电材料缺陷与界面增强拉曼散射[J]. 中国光学, 2021, 14(1): 170-181. doi: 10.37188/CO.2020-0145
HOU Xiang-yu, QIU Teng. Defects- and interface-enhanced Raman scattering in low-dimensional optoelectronic materials[J]. Chinese Optics, 2021, 14(1): 170-181. doi: 10.37188/CO.2020-0145
Citation: HOU Xiang-yu, QIU Teng. Defects- and interface-enhanced Raman scattering in low-dimensional optoelectronic materials[J]. Chinese Optics, 2021, 14(1): 170-181. doi: 10.37188/CO.2020-0145

低维光电材料缺陷与界面增强拉曼散射

doi: 10.37188/CO.2020-0145
基金项目: 国家自然科学基金面上项目(No. 11874108);国家重点研发计划项目(No. 2017YFA0403600)
详细信息
    作者简介:

    侯翔宇(1995—),男,安徽宣城人,博士研究生,2017年于东南大学获得学士学位,主要从事微纳结构与低维材料表面增强拉曼散射的研究。E-mail:houxy2061@163.com

    邱 腾(1979—),男,江苏南通人,博士,教授,博士生导师,2002年、2007年于南京大学分别获得学士、博士学位,主要从事表面增强光谱的研究。E-mail:tqiu@seu.edu.cn

  • 中图分类号: O433

Defects- and interface-enhanced Raman scattering in low-dimensional optoelectronic materials

Funds: Supported by National Natural Science Foundation of China (No. 11874108); National Key R&D Program of China (No. 2017YFA0403600)
More Information
  • 摘要: 近年来,一系列新型低维光电材料相继涌现,展现出优异的性能。这些光电材料与表面增强拉曼散射(SERS)技术相结合,显示出巨大的应用潜力,有望成为高灵敏SERS活性基底。缺陷与界面调控是低维光电材料SERS应用的重要策略,本文将重点介绍新型低维光电材料缺陷与界面增强拉曼散射的种类和增强机理。通过对缺陷与界面增强拉曼散射的应用和研究前景的展望,启发人们对SERS研究的再思考和再认识。
  • 图  1  以单层硫化钼为代表的低维光电材料晶体结构中存在的缺陷类型示意图[10]

    Figure  1.  Schematic diagram of the defect types in the crystal structure of low-dimensional optoelectronic materials represented by monolayer molybdenum sulfide[10]

    图  2  (a)氧化石墨烯中缺陷增强拉曼散射示意图[12];(b)氟还原氧化石墨烯中缺陷增强拉曼散射的示意图[15]

    Figure  2.  Schematic diagram of defects-enhanced Raman scattering in (a) graphene oxide[12]and (b) fluorinated reduced graphene oxide[15]

    图  3  (a)双氮原子替换石墨烯中碳原子的扫描隧道显微镜图像[16];(b)钠掺杂锑量子点的电荷密度分布[21]

    Figure  3.  (a) Scanning tunneling microscopic image of nitrogen doped graphene in which double carbon atoms are replaced by nitrogen atoms[16]; (b) 3D charge density distribution of sodium-doped antimonene quantum dots[21]

    图  4  (a)本身具有周期性氧空位的二氧化钒纳米片的晶体结构示意图[25];(b)合成富含氧空位的氧化钨纳米线利用电荷转移和等离激元共振协同增强拉曼散射的示意图[26];(c)合成富含氧空位的氧化钼量子点与吸附分子体系的吸收光谱[28];(d)锂溶液直接剥离富含硫空位的二维硫化钼示意图[31]

    Figure  4.  (a) Schematic diagram of crystal structures of vanadium dioxide nanosheets with periodic oxygen vacancies[25]; (b) schematic diagram of enhanced Raman scattering caused by the synergistic effect of surface plasmon resonance coupling and charge transfer in tungsten oxide nanowires with oxygen vacancies[26]; (c) UV-vis spectra of adsorbed molecules and molybdenum trioxide quantum dots with oxygen vacancies[28]; (d) schematic diagram of lithium-exfoliated molybdenum disulfide with suffur vacancies[31]

    图  5  (a)退火形成富含氧空位的氧化钨纳米线的扫描电子显微镜图像(上)和吸收光谱(下)[29];(b)水热反应制造富含氧空位的二氧化钛纳米线的扫描电子显微镜图像(上)和吸收光谱(下)[30];(c)激光诱导富含硫空位的单层硫化钼的能带(上)和增强拉曼散射谱图(下)[32]

    Figure  5.  (a) Scanning electron microscopy image (top) and UV-vis spectra (bottom) of tungsten oxide nanowires rich in oxygen vacancies formed by annealing[29]; (b) scanning electron microscopy image (top) and UV-vis spectra (bottom) of titanium dioxide nanowires rich in oxygen vacancies produced by a hydrothermal reaction[30]; (c) bandgaps (top) and surface-enhanced Raman spectra (bottom) of femtosecond laser-treated molybdenum sulfide rich in sulfur vacancies[32]

    图  6  (a)石墨烯与二硒化钨异质结利用层间电荷转移实现增强拉曼散射的示意图[33];(b)富含氧空位的氧化钨与单层硫化钼异质结利用层间电荷转移和多种激子共振实现增强拉曼散射的示意图[34-35];(c)单层硫化钼和二硒化锡异质结利用非辐射能量转移效应增强拉曼散射的示意图[36-37];(d)外加磁场下形成的石墨烯和罗丹明6G三明治结构的示意图[38]

    Figure  6.  Schematic diagram of enhanced Raman scattering caused by (a) the interlayer charge transfer in the graphene and tungsten disulfide heterojunction[33], (b) the interlayer charge transfer and multiple exciton resonances in tungsten oxide rich in oxygen vacancies and with a monolayer molybdenum sulfide heterojunction[34-35], and (c) nonradiative energy transfer effect in monolayer molybdenum sulfide and tin diselenide heterostructure[36-37]; (d) pressure-induced surface enhanced Raman scattering in graphene-molecule-graphene sandwich structures under an external magnetic field[38]

    图  7  (a)硫化钼量子点和二维还原氧化石墨烯界面结构的能带和态密度[39];(b)混杂二氧化钨和碳纳米线束状界面结构的吸收光谱[40];(c)石墨烯量子点形成一维纳米管和其表面增强拉曼散射的示意图[41]

    Figure  7.  (a) The energy band and density of the states of the interface structure between a molybdenum disulfide quantum dot and reduced graphene oxide[39]; (b) UV-vis spectra of hybrid tungsten dioxide/carbon ultrathin nanowire beams[40]; (c) scheme of the fabrication of graphene-quantum-dot assembled nanotubes and their SERS function[41]

    图  8  电荷转移在(a)金属-分子体系和(b)半导体-分子体系[44]

    Figure  8.  Charge transfer in (a) a metal-molecule system and (b) a semiconductor-molecule system[44]

    表  1  可增强分子特点总结

    Table  1.   Summary of the characteristics of the enhanced molecules

    分子
    名称
    HOMO
    能级(eV)
    LUMO
    能级(eV)
    能带带隙
    (eV)
    建议选用激光波长
    (光子能量)
    参考
    文献
    罗丹明6G−5.70−3.402.30532 nm (2.33 eV)[48]
    罗丹明B−5.45−3.082.37514 nm (2.41 eV)[49]
    结晶紫−6.00−4.101.90633 nm (1.96 eV)[23]
    甲基蓝−6.32−4.501.82633 nm (1.96 eV)[48]
    下载: 导出CSV
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  • 收稿日期:  2020-08-18
  • 修回日期:  2020-09-11
  • 网络出版日期:  2020-12-29
  • 刊出日期:  2021-01-25

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