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先进光刻中的聚焦控制预算(I)-光路部分

钟志坚 李琛毅 李世光 郭磊 韦亚一

钟志坚, 李琛毅, 李世光, 郭磊, 韦亚一. 先进光刻中的聚焦控制预算(I)-光路部分[J]. 中国光学, 2021, 14(5): 1104-1119. doi: 10.37188/CO.2021-0033
引用本文: 钟志坚, 李琛毅, 李世光, 郭磊, 韦亚一. 先进光刻中的聚焦控制预算(I)-光路部分[J]. 中国光学, 2021, 14(5): 1104-1119. doi: 10.37188/CO.2021-0033
ZHONG Zhi-jian, LI Chen-yi, LI Shi-guang, GUO Lei, WEI Ya-yi. Budget analysis of focus control in advanced lithography (I) -optical path[J]. Chinese Optics, 2021, 14(5): 1104-1119. doi: 10.37188/CO.2021-0033
Citation: ZHONG Zhi-jian, LI Chen-yi, LI Shi-guang, GUO Lei, WEI Ya-yi. Budget analysis of focus control in advanced lithography (I) -optical path[J]. Chinese Optics, 2021, 14(5): 1104-1119. doi: 10.37188/CO.2021-0033

先进光刻中的聚焦控制预算(I)-光路部分

doi: 10.37188/CO.2021-0033
基金项目: 国家自然科学基金资助项目(No. 61804174;No. 61604172)
详细信息
    作者简介:

    钟志坚(1996—),男,江西赣州人,硕士研究生,2018年于武汉理工大学获得学士学位,主要从事光刻对焦控制与检测方面的研究。E-mail:zhongzhijian18@mails.ucas.ac.cn

    李世光(1973—),女,辽宁沈阳人,研究员,硕士生导师。1993年和1996年于哈尔滨工业大学分别获得学士、硕士学位,2005年于清华大学获得博士学位,2005-2011年分别于新加坡南洋理工大学和美国北卡罗来纳大学做博士后,主要从事光刻技术和光学测量的研究。E-mail:lishiguang@tsinghua.org.cn

  • 中图分类号: TP394.1;TH691.9

Budget analysis of focus control in advanced lithography (I) -optical path

Funds: Supported by National Natural Science Foundation of China (No. 61804174; No. 61604172)
More Information
  • 摘要: 随着大规模集成电路芯片制造的技术节点不断缩小,光刻机的聚焦控制变得尤为困难。为了保证硅片曝光的质量,需要快速、准确地将硅片在几十纳米的聚焦深度范围(DOF)内进行快速调整。因此,需要仔细分析光刻过程中导致焦点偏移或工艺窗口变化的各种因素,制定合理的聚焦控制预算,将各种误差因素控制在一定范围内。本文聚焦极紫外(EUV)光刻,综述包含EUV在内的先进光刻机中光路部分对聚焦控制有影响的各种因素,总结它们产生的原理及仿真、实验结果,为开展先进光刻聚焦控制预算研究提供参考。
  • 图  1  EUV光刻机中的光路示意图[11]

    Figure  1.  Schematic diagram of optical system of EUV lithography machine[11]

    图  2  NXE:3100在不同光照条件下(常规,环形,双极)获得的光刻胶图案的电子显微照片[14]

    Figure  2.  Electron micrographs of photoresist patterns obtained by NXE:3100 under conventional, circular, dipole illuminations[14]

    图  3  EUV入射光锥与出射光锥的重叠与不重叠状态

    Figure  3.  The overlapping and non-overlapping states of the exiting light cone and the incident light cone in EUV

    图  4  EUV掩模结构

    Figure  4.  Structure of EUV mask

    图  5  在双极TE照明下的一维图形(光栅)成像

    Figure  5.  One-dimensional graphic (grating) imaging under dipole TE illumination

    图  6  Kirchhoff和三维模型下的掩模最佳焦点的偏移情况[26]

    Figure  6.  Best focus shift of the mask with Kirchhoff and the 3D model[26]

    图  7  焦点偏移与pitch间的关系[27]

    Figure  7.  Relationship between focus shift and pitch[27]

    图  8  0级和1级的衍射相位随图形周期的变化情况[28]

    Figure  8.  Results of diffraction phase of the 0th and 1st order varying with pitch[28]

    图  9  64 nm、96 nm周期线条下的最佳焦点(点)和聚焦深度(柱)[34]

    Figure  9.  Best focus(point) and DOF(bar) of different pitches (64 nm, 96 nm)[34]

    图  10  掩模弯曲对聚焦偏移的影响[37]

    Figure  10.  Effect of mask bending on focus shift[37]

    图  11  EUV光刻机中的掩模聚焦偏移

    Figure  11.  Mask defocus of EUV lithography machine

    图  12  泽尼克多项式[41]

    Figure  12.  Zernike polynomials[41]

    图  13  像散与场曲对UDOF的影响[42]

    Figure  13.  Effects of astigmatism and field curvature on UDOF[42]

    图  14  曝光导致的透镜热效应

    Figure  14.  Lens heating caused by exposure

    图  15  (a)波前校正前的(b)波前校正后公共聚焦深度[44]

    Figure  15.  Common UDOFs (a) without and (b) with appling wavefront[44]

    图  16  杂散光对聚焦深度的影响[50]

    Figure  16.  Effect of flare on depth of focus[50]

    图  17  光刻胶三维效应导致最佳焦点偏移

    Figure  17.  Best focus shift caused by resist 3D effect

    图  18  亮掩模和暗掩模上不同图形的最佳焦点[56]

    Figure  18.  Best focus through pitch on bright and dark mask[56]

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  • 收稿日期:  2021-02-01
  • 修回日期:  2021-03-08
  • 网络出版日期:  2021-04-30
  • 刊出日期:  2021-09-18

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