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铌酸锂薄膜调制器的研究进展

刘海锋 郭宏杰 谭满清 李智勇

刘海锋, 郭宏杰, 谭满清, 李智勇. 铌酸锂薄膜调制器的研究进展[J]. 中国光学(中英文), 2022, 15(1): 1-13. doi: 10.37188/CO.2021-0115
引用本文: 刘海锋, 郭宏杰, 谭满清, 李智勇. 铌酸锂薄膜调制器的研究进展[J]. 中国光学(中英文), 2022, 15(1): 1-13. doi: 10.37188/CO.2021-0115
LIU Hai-feng, GUO Hong-jie, TAN Man-qing, LI Zhi-yong. Research progress of lithium niobate thin-film modulators[J]. Chinese Optics, 2022, 15(1): 1-13. doi: 10.37188/CO.2021-0115
Citation: LIU Hai-feng, GUO Hong-jie, TAN Man-qing, LI Zhi-yong. Research progress of lithium niobate thin-film modulators[J]. Chinese Optics, 2022, 15(1): 1-13. doi: 10.37188/CO.2021-0115

铌酸锂薄膜调制器的研究进展

基金项目: 国家重点研发计划 (No. 2019YFB2203802);国家自然科学基金资助项目 (No. 61934007)
详细信息
    作者简介:

    刘海锋(1983—),男,山东烟台人,博士,副研究员,2007年于北京信息科技大学获得学士学位,2010年于北京航空航天大学光学工程专业获得硕士学位,2020年于中国科学院大学物理电子学专业获得博士学位,主要从事半导体传感模块和光子集成方面研究,E-mail:liuhaifeng@semi.ac.cn

    郭宏杰(1997—),男,山西吕梁人,硕士研究生,2019年于太原理工大学获得学士学位,主要从事铌酸锂相位调制器、光纤传感等方面的研究。E-mail:guohongjie@semi.ac.cn

    谭满清(1967—),男,湖南衡山人,博士,教授,博士生导师。于北京理工大学获得博士学位,1996年在半导体研究所博士后流动站从事研究工作。1998年以后,在半导体研究所工作。目前主要从事半导体光电器件研制及器件物理的研究。E-mail: mqtan@semi.ac.cn

  • 中图分类号: TN29

Research progress of lithium niobate thin-film modulators

Funds: Supported by National Key Research and Development Program of China (No. 2019YFB2203802); National Natural Science Foundation of China (No. 61934007)
More Information
  • 摘要: 铌酸锂薄膜调制器具有体积小、带宽高、半波电压低的优点,在光纤通讯和光纤传感领域具有重要应用价值,是近年来的研究热点。本文梳理了铌酸锂薄膜调制器的波导结构、耦合结构、电极结构的研究进展,总结了LN薄膜波导的制备工艺,并深入分析了不同结构调制器的性能。基于SOI和LNOI结构,薄膜调制器实现了VπL<2 V∙cm,双锥形耦合方案实现了耦合损耗<0.5 dB/facet,行波电极结构实现了调制带宽>100 GHz。铌酸锂薄膜调制器的性能在大多数方面优于目前商用铌酸锂调制器,随着波导工艺进一步提升,将成为铌酸锂调制器的热门方案。最后对铌酸锂薄膜调制器的发展趋势和应用前景进行了展望。

     

  • 图 1  (a)~(c)LNOI结构:(a)置换波导;(b)加载波导;(c)脊形波导。(d)SOI结构

    Figure 1.  (a)~(c) LNOI structure: (a) diffused waveguide; (b) loaded waveguide; (c) ridge waveguide. (d) SOI structure

    图 2  (a) MZI结构示意图;(b) MI结构示意图

    Figure 2.  Schematic diagrams of (a) MZI structure and (b) MI structure

    图 3  两种谐振腔输出端口光强分布图[16]。(a)微环结构;(b)光子晶体结构。蓝线为施加电场后波导的光学特性变化曲线

    Figure 3.  Light intensity distribution diagram of the output port of the resonant cavity structure waveguide[16]. (a) Microring structure; (b) photonic crystal structure. The blue line is the optical characteristic change curve of the waveguide after an electric field is applied

    图 4  (a)锥形耦合模型[19];(b)反锥形耦合模型[19];(c)光栅耦合模型[19];(d)消逝耦合模型[19]

    Figure 4.  (a) Tapered coupling model[19]; (b) inverse tapered coupling model[19]; (c) grating coupling model[19]; (d) evanescent coupling model[19]

    图 5  光纤与调制器集成方案[29]。(a)调制器结构;(b)光在光纤中传播时的波导结构;(c)光在波导中传播时的波导结构

    Figure 5.  Optical fiber and modulator integration scheme[29]. (a) Modulator structure; (b) waveguide structure when light propagates in an optical fiber; (c) waveguide structure when light propagates in a waveguide

    图 6  铌酸锂调制器中的电极基础结构。 (a)电场方向平行波导芯层;(b)电场方向垂直波导芯层

    Figure 6.  Electrode basic structure of LN modulators. (a) The electric field direction is parallel to the waveguide core; (b) the electric field direction is perpendicular to the waveguide core

    图 7  (a)集总电极结构;(b)行波电极结构

    Figure 7.  (a) Lumped electrode structure; (b) traveling wave electrode structure

    图 8  (a)~(d)CMP工艺流程图和(e)CMP系统结构图[58]

    Figure 8.  (a)~(d) CMP process flow chart and (e) CMP system structure diagram[58]

    图 9  (a) FIBm前及(b) FIBm后波导图像[59]

    Figure 9.  Waveguide image (a) before and (b) after FIBm[59]

    图 10  金刚石切割制造波导过程[61]

    Figure 10.  Diamond cutting process for manufacturing waveguides[61]

    图 11  调制器输出端口光场图。(a) PM;(b) MZM;(c) MIM;(d) MRM;(e) PHCM

    Figure 11.  The light field change diagram of the output port of the modulator. (a) PM; (b) MZM; (c) MIM; (d) MRM; (e) PHCM

    表  1  不同耦合方案总结

    Table  1.   Summary of different coupling schemes

    耦合方案TE损耗/
    (dB·facet−1)
    LN切向特点
    边缘耦合:锥形[20]1.5X工艺难度大,损耗低
    边缘耦合:反锥形[25]0.5X工艺难度大,损耗低
    光栅耦合[26]3.5Z工艺成熟,但损耗高
    消逝耦合[28]1.32X工艺难度较大,损耗低
    光纤集成[29]<1.5X工艺难度较大,损耗较低
    下载: 导出CSV

    表  2  不同刻蚀工艺对比

    Table  2.   Comparison of different etching processes

    刻蚀工艺侧壁倾斜度损耗/(dB·cm−1)脊形宽度/μm特点
    湿法刻蚀[54]NAN$0.3\left({\rm{TE}}\right)$
    $0.9\left({\rm{TM}}\right)$
    6.5波导尺寸大
    干法刻蚀[57]NAN$0.2\left({\rm{TE}}\right)$0.8损耗小,波导尺寸小
    化学机械抛光(CMP)[53, 58]9~51°$0.027\left({\rm{TE}}\right)$3损耗小,波导尺寸大
    金刚石切割[61]>65°$1.2\left({\rm{TE}}\right)$
    $2.8\left({\rm{TM}}\right)$
    2.1损耗较大,
    波导容易断裂
    下载: 导出CSV

    表  3  不同加载材料损耗比较

    Table  3.   Comparison of loss of different loaded materials

    加载材料损耗(TE)/(dB·cm−1)
    ${\rm{Si}}_{3}{{\rm{N}}}_{4}$[62]$2.25$
    ${\rm{Ti}}{{\rm{O}}}_{2}$[69]$5.8$
    $ {\mathrm{T}\mathrm{a}}_{2}{\mathrm{O}}_{5} $[67]$5$
    硫化物玻璃材料[68]$1.2$
    下载: 导出CSV

    表  4  ${V}_{{\text{π}} }{L}$总结

    Table  4.   ${V}_{{\text{π}} }{L}$ summary

    论文编号调制器薄膜
    结构分类
    调制器光学
    结构分类
    ${ V }_{ {\text{π} } }{L}/({\rm{V} }\cdot{\rm{ cm} }$)年份
    [70]Rib Etch on LNOIMZM1.752021
    [25]Rib Etch on LNOIMZM2.362021
    [62]Rib load on LNOIMZM2.1122020
    [71]Rib load on LNOIMZM3.122020
    [72]Rib Etch on LNOIMZM2.47/2.3252020
    [73]Rib Etch on LNOIMZM2.22020
    [74]Rib Etch on LNOIMZM1.62019
    [75]TFLN on SOIMZM2.552019
    [13]TFLN on SOIMZM2.2252019
    [76]TFLN on SOIMIM1.22019
    [64]Rib load on LNOIMZM3.62019
    [64]Rib Etch on LNOIMZM4.92019
    [47]PE&APE on LNOIMZM10.22019
    [77]Rib Etch on LNOIMIM1.42019
    [12]TFLN on SOIMZM6.72018
    [49]Rib Etch on LNOIMZM1.82018
    [57]Rib Etch on LNOIMZM2.8/2.3/2.22018
    [78]PE&APE on LNOIPM6.52016
    下载: 导出CSV

    表  5  可调谐性总结

    Table  5.   Tunability summary

    论文编号调制器薄膜
    结构分类
    调制器光学
    结构分类
    可调谐性/(pm·V−1)年份
    [79]Rib Etch on LNOIPHCM162020
    [80]Rib Etch on LNOIMRM92020
    [65]Rib load on LNOIMRM2.92019
    [81]Rib Etch on LNOIMRM32019
    [49]Rib Etch on LNOIMRM2018
    下载: 导出CSV

    表  6  光学损耗总结

    Table  6.   Summary of optical loss

    论文编号调制器薄膜
    结构分类
    调制器光学
    结构分类
    光学损耗/dB年份
    [25]Rib Etch on LNOIMZM32021
    [62]Rib load on LNOIMZM12.42020
    [71]Rib load on LNOIMZM13.862020
    [79]Rib Etch on LNOIPHCM2.22020
    [72]Rib Etch on LNOIMZM9.7/10.42020
    [75]TFLN ON SOIMZM2.52019
    [13]TFLN ON SOIMZM<12019
    [76]TFLN ON SOIMIM3.32019
    [77]Rib Etch on LNOIMIM7.82019
    [82]Rib load on LNOIPM>8.42016
    下载: 导出CSV

    表  7  消光比总结

    Table  7.   Summary of OER

    论文编号调制器薄膜
    结构分类
    调制器光学
    结构分类
    消光比(dB)年份
    [62]Rib load on LNOIMZM302020
    [79]Rib Etch on LNOIPHCM11.52020
    [80]Rib Etch on LNOIMRM202020
    [76]TFLN ON SOIMIM6.62019
    [49]Rib Etch on LNOIMZM102018
    [57]Rib Etch on LNOIMZM302018
    下载: 导出CSV

    表  8  3 dB带宽总结

    Table  8.   Summary of 3 dB bandwidth

    论文编号调制器薄膜
    结构分类
    调制器光学
    结构分类
    3 dB带宽/GHz年份
    [70]Rib Etch on LNOIMZM402021
    [25]Rib Etch on LNOIMZM602021
    [71]Rib load on LNOIMZM292020
    [79]Rib Etch on LNOIPHCM17.52020
    [72]Rib Etch on LNOIMZM48/672020
    [80]Rib Etch on LNOIMRM282020
    [73]Rib Etch on LNOIMZM672020
    [75]TFLN ON SOIMZM>702019
    [13]TFLN ON SOIMZM1002019
    [76]TFLN ON SOIMIM17.52019
    [64]Rib load on LNOIMZM5~4202019
    [64]Rib Etch on LNOIMZM3~3402019
    [83]Rib Etch on LNOIPM302019
    [77]Rib Etch on LNOIMIM122019
    [12]TFLN ON SOIMZM1002018
    [49]Rib Etch on LNOIMRM302018
    [57]Rib Etch on LNOIMZM15~802018
    下载: 导出CSV

    表  9  调制速率总结

    Table  9.   Summary of modulation rate

    论文编号调制器薄膜
    结构分类
    调制器光学
    结构分类
    调制速率/(${\rm{Gbit}}{{\rm{s}}}^{-1}$)年份
    [71]Rib load on LNOIMZM29@NRZ2020
    [72]Rib Etch on LNOIMZM220@QPSK
    320@QAM
    2020
    [79]Rib Etch on LNOIPHCM11@NRZ2020
    [75]TFLN ON SOIMZM100@OOK
    112@PAM-4
    2019
    [76]TFLN ON SOIMIM40@OOK2019
    [77]Rib Etch on LNOIMIM35@NRZ2019
    [49]Rib Etch on LNOIMRM40@NRZ2018
    下载: 导出CSV
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  • 收稿日期:  2021-05-24
  • 修回日期:  2021-06-25
  • 网络出版日期:  2021-10-16
  • 刊出日期:  2022-01-19

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