基于碳纳米薄膜/砷化镓范德华异质结的高性能自驱动光电探测器研究

霍婷婷; 张冬冬; 施祥蕾; 潘宇; 孙利杰; 苏言杰

doi:10.37188/CO.2021-0149

基于碳纳米薄膜/砷化镓范德华异质结的高性能自驱动光电探测器研究

1.
上海交通大学电子信息与电气工程学院微纳电子学系薄膜与微细技术教育部重点实验室，上海 200240
2.
上海航天技术研究院，上海 201109
3.
上海空间电源研究所空间电源技术国家重点实验室，上海 200245

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中图分类号: TN362
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出版历程
- 收稿日期: 2021-07-23
- 修回日期: 2021-08-26
- 录用日期: 2021-10-20
- 网络出版日期: 2021-10-20
- 刊出日期: 2022-03-21

High-performance self-powered photodetectors based on the carbon nanomaterial/GaAs vdW heterojunctions

doi: 10.37188/CO.2021-0149

1.
Key Laboratory of Thin Film and Microfabrication (Ministry of Education), Department of Micro/Nano Electronics, School of Electronics Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
2.
Shanghai Academy of Spaceflight Technology, Shanghai 201109, China
3.
State Key Laboratory of Space Power Technology, Shanghai Institute of Space Power Sources, Shanghai 200245, China

Funds: Supported by National Natural Science Foundation of China (No. 61974089); Shanghai Natural Science Foundation (No. 19ZR1426900).

More Information

Author Bio:
Huo Tingting (1996—), female, from Yuncheng, Shanxi Province, master degree, graduated from Nanchang University with a bachelor degree in 2018, and obtained a master degree from Shanghai Jiaotong University in 2021, mainly engaged in the research of optoelectronic devices, van der Waals heterojunction and other fields. Email: huotingitng@sjtu.edu.cn

Sun Lijie (1983—), male, born in Xinxiang, Henan Province, Ph.D., researcher, obtained his Ph.D. from University of Science and Technology of China in 2010, and is currently the chief researcher of the State Key Laboratory of Space Power Technology, Shanghai Institute of Space Power, mainly engaged in the research of GaAs solar cells, new optoelectronic devices, etc. E-mail: sunlijielu@163.com

Su Yanjie (1982—), male, from Shangqiu, Henan Province, Ph.D., associate researcher/doctoral supervisor, obtained his Ph.D. from Shanghai Jiaotong University in 2012, and is currently working in the Department of Micro-Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiaotong University, mainly engaged in the research of nanomaterials and devices. E-mail: yanjiesu@sjtu.edu.cn

Corresponding author: sunlijielu@163.com; yanjiesu@sjtu.edu.cn

摘要

摘要: 基于碳纳米材料/体半导体范德华（vdW）异质结的光电器件可以同时实现碳纳米材料的超高载流子迁移率以及体半导体的优异光电性能，且具有结构简单、工艺简便、易于调控界面等优点。尤其是通过调控单壁碳纳米管（SWCNT）的直径/手性、费米能级等可以与体半导体形成能带匹配、具有原子级界面的新型混合维度vdW异质结。本文报道了一种基于（6，5）手性为主的SWCNT薄膜与n型GaAs所形成的pn结的宽光谱自驱动光电探测器，并利用石墨烯降低SWCNT薄膜内载流子的复合几率和促进载流子传输。实验结果表明，器件对405~1064 nm波段光子表现出高灵敏的光电响应，零偏压条件下最大光电响应度和比探测率分别可达1.214 A/W和2×10¹² Jones。
- 范德华异质结 /
- 单壁碳纳米管 /
- 砷化镓 /
- 自驱动光电探测器
Abstract: With the advantages such as simple structure, simple process and easy interface control, the photoelectric devices based on carbon nanomaterial/bulk semiconductor van der Waals (vdW) heterojunctions can fully realize the ultrahigh carrier mobility of carbon nanomaterials and the excellent photoelectric properties of bulk semiconductors. Especially, the novel mixed-dimensional vdW heterojunctions can be prepared by controlling the diameter/chirality and Fermi level of single-walled carbon nanotubes (SWCNTs) to form atomic-level interfaces and match bandgaps with bulk semiconductors. Here, we reported a self-powered broadband photodetector based on the pn vdW heterojunctions by combining (6, 5)-enriched semiconducting SWCNT film with n-type GaAs, and used graphene to reduce the probability of carrier recombination in SWCNT film and to promote the carrier transport. The experimental results suggest that the self-powered device exhibits high-sensitivity photoelectric response toward the incident photons in the 405~1064 nm range, and that the max photoelectric responsivity of 1.214 A/W and the specific detectivity of 2 × 10¹² Jones could be achieved at zero bias.
- van der Waals heterojunctions /
- single-walled carbon nanotubes /
- GaAs /
- self-powered photodetectors

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图 1 （a）石墨烯/SWCNT膜/GaAs vdW异质结光电探测器结构示意图；（b）石墨烯/SWCNT薄膜的SEM图片

Figure 1. (a) Schematic diagram of graphene/SWCNT film/GaAs vdW heterojunction photodetector structure; (b) SEM image of graphene/SWCNT film

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图 2 石墨烯/SWCNT膜/GaAs vdW异质结光电探测器在(a)暗态和(b)AM 1.5G条件下的J-V曲线

Figure 2. Typical J-V curves of graphene/SWCNT film/GaAs vdW heterojunction photodetector in (a) dark state and (b) AM 1.5G condition

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图 3 (a)和(b) 不同激光波长辐照下石墨烯/SWCNT膜/GaAs vdW异质结光电探测器的J-V曲线；(c)和(d) 零偏压时不同激光波长辐照下的光电响应重复性曲线

Figure 3. (a) (b) J-V curves of the graphene/SWCNT film/GaAs vdW heterojunction photodetector irradiated at different laser wavelengthes. (c) (d) Photoelectric response repeatability curves when irradiated by laser with different laser wavelengthes at zero bias

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图 4 405 nm激光辐照条件下器件的瞬态光响应曲线

Figure 4. Transient light response curve of the device under 405 nm laser irradiation

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图 5 零偏压条件下石墨烯/SWCNT膜/GaAs vdW异质结光电探测器的(a~b)光电响应度和(c~d)比探测率随入射光功率密度改变而变化的曲线

Figure 5. The responsivity (a~b) and specific detectivity (c~d) of graphene/SWCNT film/GaAs vdW heterojunction photodetectors as a function of incident light power density under zero bias conditions

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图 6 石墨烯/SWCNT膜/GaAs vdW异质结在光照时的能带结构示意图

Figure 6. Schematic diagram of the energy band structure of graphene/SWCNT film/GaAs vdW heterojunction exposed to light irradiaton

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