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摘要: 腔面光学灾变损伤是制约半导体激光器输出功率以及可靠性的主要因素之一，量子阱混杂技术是最常用的解决腔面灾变性光学损伤的方法。为了制备高功率、高可靠性半导体激光器单管器件，对Si杂质诱导量子阱混杂工艺进行了探索。本文使用Si介质层作为扩散源，采用管式炉高温退火的方法进行Si杂质扩散诱导量子阱混杂研究。实验并分析了介质膜厚度、退火条件、量子垒材料、牺牲层材料等因素对InGaAs/GaAs(P)量子阱蓝移量的影响。实验发现，量子阱和量子垒的混杂效果随着扩散时间以及退火温度增加而增大，且对温度尤其敏感。当退火条件为780 ℃、10 h时，InGaAs/GaAsP结构的波长蓝移量达到70.5 nm，量子垒为GaAsP时比GaAs有更好的促进蓝移效果。相同外延结构下，InGaP牺牲层结构相比AlGaAs牺牲层有更大的波长蓝移。Abstract: Catastrophic Optical Mirror Damage (COMD) on the cavity surface is one of the main factors that restrict the output power and reliability of semiconductor lasers. Quantum well intermixing technology is one of the most commonly used methods to avoid COMD. Si impurity-induced quantum well intermixing technology is explored for high-power, high-reliability laser diode devices. In this paper, a silicon dielectric layer is used as the diffusion source for a study of silicon impurity-induced disordering by annealing in a tube furnace. The effects of the dielectric film thickness, annealing conditions, quantum barrier material and sacrificial layer material on the wavelength blue shift of InGaAs/GaAs(P) quantum wells were analyzed. It is found that the degree of intermixing between quantum well and barrier increases with the increasing of annealing time and temperature, but is particularly sensitive to temperature. The wavelength blue shift of the InGaAs/GaAsP structure is 70.5 nm under 780 ℃ annealing temperature at a duration of 10 hours. Also, the GaAsP barrier structure has a larger blue shift than the GaAs barrier, and the epitaxial layer with an InGaP sacrificial layer has a larger blue shift than the AlGaAs sacrificial layer.
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Key words:
- quantum well intermixing /
- semiconductor laser diodes /
- COMD
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图 2 不同Si介质膜厚度下退火后的归一化PL谱
Figure 2. Normalized PL spectra varying with different Si dielectric film thicknesses after annealing
图 3 当Si厚度为70 nm，牺牲层为InGaP，不同退火条件下的PL谱
Figure 3. PL spectra under different annealing conditions when the thickness of Si is 70 nm with InGaP as sacrificial layer
图 4 800 ℃/10 h下退火后，W1、W2外延片在硅诱导下以及W2在SiN保护下的SIMS图
Figure 4. SIMS of samples with W1 and W2 structure induced by Si and W2 structure protected by SiN after 800 ℃、10 h annealing
图 5 有无牺牲层的W1外延片在780 ℃、4 h条件下退火后的PL图像
Figure 5. PL spectra of structure W1 with and without a sacrificial layer after annealing at 780 ℃、4 h
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